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    • 6. 发明申请
    • FREQUENCY MIXER
    • 频率混频器
    • US20110151820A1
    • 2011-06-23
    • US12837807
    • 2010-07-16
    • Young-Ho KIM
    • Young-Ho KIM
    • H04B1/10
    • H03D7/1441H03D7/1408H03D7/1433H03D7/1458H03D2200/0025H03D2200/0033H03D2200/0043H03D2200/0084H03D2200/0096
    • A down-conversion frequency mixer includes: a radio frequency (RF) input unit disposed between a VDD line and a GND line and configured to receive an RF signal; an LO input unit configured to receive a carrier frequency (LO) from an internal frequency synthesizer; an intermediate frequency (IF) output unit disposed in parallel to the RF input unit between the VDD line and the GND line and configured to mix the RF signal with the LO signal and output an IF signal; a current generation unit configured to generate a stabilized current without being influenced with noise entered through the VDD line and the GND line; and a noise blocking unit disposed between the VDD line and the RF input unit, between the VDD line and the IF output unit, between the GND line and the RF input unit, and between the GND line and the LO input unit and configured to copy the current generated from the current generator and generate a stabilized current.
    • 下变频混频器包括:射频(RF)输入单元,设置在VDD线和GND线之间,并被配置为接收RF信号; LO输入单元,被配置为从内部频率合成器接收载波频率(LO); 中频(IF)输出单元,其与VDD线和GND线之间的RF输入单元并联配置,并配置为将RF信号与LO信号混频并输出IF信号; 电流产生单元,被配置为产生稳定电流,而不受通过VDD线和GND线输入的噪声的影响; 以及噪声阻断单元,设置在VDD线和RF输入单元之间,VDD线和IF输出单元之间,GND线和RF输入单元之间,以及GND线和LO输入单元之间,并配置为复制 从电流发生器产生的电流产生稳定的电流。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20090246938A1
    • 2009-10-01
    • US12409052
    • 2009-03-23
    • Young-Ho KIM
    • Young-Ho KIM
    • H01L21/302H01L21/311
    • H01L21/78
    • A method of forming a semiconductor device includes forming a first chip region, a second chip region, and a scribe lane region between the first and second chip regions in a wafer, the wafer having a first surface and a second surface facing the first surface, and forming a penetrating extension hole and a scribe connector in the scribe lane region, the penetrating extension hole penetrating the wafer from the first surface to the second surface and extending along the scribe lane region, wherein the scribe connector connects the first and second chip regions spaced apart from each other by the penetrating extension hole.
    • 一种形成半导体器件的方法包括在晶片中的第一和第二芯片区域之间形成第一芯片区域,第二芯片区域和划线路区域,晶片具有面向第一表面的第一表面和第二表面, 在划线路区域形成穿透延伸孔和划线连接器,穿透延伸孔从第一表面穿过晶片延伸到第二表面并沿着划线路区域延伸,其中划线连接器将第一和第二芯片区域 通过穿透延伸孔彼此间隔开。