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1. 发明授权

US07358316B2 Process for preparing organic silicate polymer 有权
标题翻译：有机硅酸盐聚合物的制备方法
公开(公告)号：US07358316B2
公开(公告)日：2008-04-15
申请号：US10380812
申请日：2001-09-18
申请人： Min-Jin Ko , Myung-Sun Moon , Dong-Seok Shin , Jung-Won Kang , Hye-Yeong Nam
发明人： Min-Jin Ko , Myung-Sun Moon , Dong-Seok Shin , Jung-Won Kang , Hye-Yeong Nam
IPC分类号： C08G77/06
CPC分类号： C08G77/50 , C08G77/06 , C09D183/04 , Y10T428/31663
摘要： The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.
摘要翻译：本发明涉及具有高密度和高性能的诸如半导体器件的下一代电子器件所必需的低介电材料。详细地说，本发明提供了一种制备有机硅酸盐聚合物的方法，其包括在没有均质化有机溶剂的情况下的聚合步骤，在催化剂存在下将有机硅烷化合物与水混合并反应以水解和缩合硅烷化合物，这是热稳定的，具有良好的机械和抗裂性能; 和用于形成低介电绝缘膜的涂料组合物; 以及使用根据该方法制备的有机硅酸盐聚合物制备低介电绝缘膜的方法，以及包括根据该方法制备的低介电绝缘膜的电子器件。

2. 发明申请

US20070088144A1 Organic silicate polymer and insulation film comprising the same 有权
标题翻译：有机硅酸盐聚合物和包含其的绝缘膜
公开(公告)号：US20070088144A1
公开(公告)日：2007-04-19
申请号：US10511639
申请日：2003-03-28
申请人： Jung-Won Kang , Min-Jin Ko , Dong-Seok Shin , Gwi-Gwon Kang , Myung-Sun Moon , Hye-Yeong Nam , Bum-Gyu Choi , Young-Duk Kim , Byung-Ro Kim , Won-Jong Kwon , Sang-Min Park
发明人： Jung-Won Kang , Min-Jin Ko , Dong-Seok Shin , Gwi-Gwon Kang , Myung-Sun Moon , Hye-Yeong Nam , Bum-Gyu Choi , Young-Duk Kim , Byung-Ro Kim , Won-Jong Kwon , Sang-Min Park
IPC分类号： C08G77/06 , C08G77/12 , C08L83/04
CPC分类号： C09D183/04 , C08G77/06 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.
摘要翻译：本发明涉及通过将硅烷化合物与有机溶剂混合以制备第一混合物并通过加入水和催化剂水解和缩合第一混合物制备的有机硅酸盐聚合物，第一混合物选自氧化氢硅烷，环状硅氧烷，氧化氢硅烷和硅烷或硅烷低聚物的第二混合物，以及环状硅氧烷和硅烷或硅烷低聚物的第三混合物，用于形成通过使用有机硅酸酯聚合物制备的半导体器件的绝缘膜的组合物，使用该组合物的绝缘膜，以及包含绝缘膜的半导体器件。

3. 发明授权

US07834119B2 Organic silicate polymer and insulation film comprising the same 有权
标题翻译：有机硅酸盐聚合物和包含其的绝缘膜
公开(公告)号：US07834119B2
公开(公告)日：2010-11-16
申请号：US10511639
申请日：2003-03-28
申请人： Jung-Won Kang , Min-Jin Ko , Dong-Seok Shin , Gwi-Gwon Kang , Myung-Sun Moon , Hye-Yeong Nam , Bum-Gyu Choi , Young-Duk Kim , Byung-Ro Kim , Won-Jong Kwon , Sang-Min Park
发明人： Jung-Won Kang , Min-Jin Ko , Dong-Seok Shin , Gwi-Gwon Kang , Myung-Sun Moon , Hye-Yeong Nam , Bum-Gyu Choi , Young-Duk Kim , Byung-Ro Kim , Won-Jong Kwon , Sang-Min Park
IPC分类号： C08G77/04
CPC分类号： C09D183/04 , C08G77/06 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.
摘要翻译：本发明涉及通过将硅烷化合物与有机溶剂混合以制备第一混合物并通过加入水和催化剂水解和缩合第一混合物制备的有机硅酸盐聚合物，第一混合物选自氧化氢硅烷，环状硅氧烷，氧化氢硅烷和硅烷或硅烷低聚物的第二混合物，以及环状硅氧烷和硅烷或硅烷低聚物的第三混合物，用于形成通过使用有机硅酸酯聚合物制备的半导体器件的绝缘膜的组合物，使用该组合物的绝缘膜，以及包含绝缘膜的半导体器件。

4. 发明授权

US06806161B2 Process for preparing insulating material having low dielectric constant 有权
公开(公告)号：US06806161B2
公开(公告)日：2004-10-19
申请号：US09844553
申请日：2001-04-27
申请人： Min-Jin Ko , Hye-Yeong Nam , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang
发明人： Min-Jin Ko , Hye-Yeong Nam , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang
IPC分类号： H01L2176
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/76801 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less. The present invention provides a process for preparing a porous wiring interlayer insulating film having very low dielectric constant for a semiconductor device comprising the steps of a) preparing a mixed complex of pore-forming organic molecules and a matrix resin, b) coating the mixed complex on a substrate, and c) heating the mixed complex to remove the organic molecules therefrom, thereby forming pores inside the complex. The porous wiring interlayer insulating film having very low dielectric constant prepared according to the process of the present invention has reduced phase-separation, excellent processibility, isotropic structure and very small pores with a size of a few nanometers or less.

5. 发明申请

US20070173074A1 Semiconductor interlayer dielectric material and a semiconductor device using the same 有权
标题翻译：半导体层间绝缘材料和使用其的半导体器件
公开(公告)号：US20070173074A1
公开(公告)日：2007-07-26
申请号：US11639318
申请日：2006-12-15
申请人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
发明人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
IPC分类号： H01L21/469
CPC分类号： H01L21/3122 , C08G77/50 , C08G77/52 , H01L21/02126 , H01L21/02216 , H01L21/02282 , Y10T428/31663
摘要： The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula R1mR2nSiX4-m-n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula R3pY3-pSi-M-SiR4qZ3-q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).
摘要翻译：本发明涉及低密度和高性能的下一代半导体所必需的低介电材料，更具体地涉及一种热稳定且具有良好的成膜性能和优异的机械性能的低介电材料，包括低电介质材料和使用电介质膜制造的半导体器件。本发明还提供一种在组分（a）和组分（b）的树脂组合物制备的网络中具有柔性有机桥连单元的有机硅酸盐聚合物，其中组分（a）是式R a的有机硅烷（1）其中每个R 1和R 2各自独立地选自氢， 1可以相同或不同的是不可水解基团; X是可水解基团; m和n是0-3的整数，满足0 < = m + n <= 3）和/或部分水解的缩合物，其中组分（b）是式R 3的有机桥连硅烷 > 3-p Si-M-SiR 4 Z 3-q（其中R 3，可以相同或不同的R 4和R 4是不可水解基团; Y和Z可以相同或不同，为可水解基团; p和q 为0〜2的整数）和/或具有有机bri的环状低聚物单位（Si-M-Si）。

6. 发明申请

US20060127587A1 Organic silicate polymer and insulation film comprising the same 审中-公开
标题翻译：有机硅酸盐聚合物和包含其的绝缘膜
公开(公告)号：US20060127587A1
公开(公告)日：2006-06-15
申请号：US10516494
申请日：2003-06-27
申请人： Jung-won Kang , Myung-Sun Moon , Min-Jin Ko , Gwi-Gwon Kang , Dong-Seok Shin , Hye-Yeong Nam , Young-Duk Kim , Bum-Gyu Choi , Byung-Ro Kim , Sang-Min Park
发明人： Jung-won Kang , Myung-Sun Moon , Min-Jin Ko , Gwi-Gwon Kang , Dong-Seok Shin , Hye-Yeong Nam , Young-Duk Kim , Bum-Gyu Choi , Byung-Ro Kim , Sang-Min Park
IPC分类号： B05D3/02 , C08G77/60 , C07F7/18
CPC分类号： H01L21/3121 , C08G77/48 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method. The organosilicate polymer prepared according to the present invention has superior thermal stability and mechanical strength; an insulating film-forming composition comprising the same can be used for an interlayer insulating film for low dielectric wiring that can contribute to a high speed semiconductor, reduce power consumption, and remarkably decrease cross-talk between metal wiring; and a film obtained by applying the composition to an insulating film has superior coating properties, inhibits phase-separation, can easily control minute pores because organic substances are thermally decomposed to form pores during a curing process, and has superior insulating properties and a remarkably decreased film density.
摘要翻译：本发明涉及一种用于形成用于半导体器件的低介电绝缘膜的组合物，特别涉及通过将两端封装有硅烷化合物的可热分解有机硅烷化合物和普通硅烷化合物混合而制备的有机硅酸盐聚合物或硅烷低聚物，然后加入水和催化剂进行水解和缩合，以及用于包含该组合物的半导体器件的绝缘膜用涂料组合物，用于半导体器件的绝缘膜用涂料组合物，还包含成孔有机物质，通过涂布组合物和固化来制备用于半导体器件的绝缘膜的方法，以及包括通过该方法制备的低介电绝缘膜的半导体器件。根据本发明制备的有机硅酸盐聚合物具有优异的热稳定性和机械强度; 可以使用包含该绝缘膜的绝缘膜形成用组合物用于低电介质布线的层间绝缘膜，其可有助于高速半导体，降低功耗，并显着降低金属布线之间的串扰; 并且通过将该组合物施加到绝缘膜上获得的膜具有优异的涂布性能，抑制相分离，可以容易地控制微孔，因为有机物质在固化过程中被热分解形成孔隙，并且具有优异的绝缘性能并显着降低胶片密度。

7. 发明授权

US06743471B2 Process for preparing insulating material having low dielectric constant 有权
标题翻译：具有低介电常数的绝缘材料的制备方法
公开(公告)号：US06743471B2
公开(公告)日：2004-06-01
申请号：US10447039
申请日：2003-05-28
申请人： Min-Jin Ko , Hye-Yeong Nam , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang
发明人： Min-Jin Ko , Hye-Yeong Nam , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , H01L21/76801 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： The present invention relates to low dielectric materials essential for a semiconductor having high density and high performance of the next generation, particularly to a process for preparing a porous interlayer insulating film having low dielectric constant containing pores with a size of a few nanometers or less. The present invention provides a process for preparing a porous wiring interlayer insulating film having very low dielectric constant for a semiconductor device comprising the steps of a) preparing a mixed complex of pore-forming organic molecules and a matrix resin, b) coating the mixed complex on a substrate, and c) heating the mixed complex to remove the organic molecules therefrom, thereby forming pores inside the complex. The porous wiring interlayer insulating film having very low dielectric constant prepared according to the process of the present invention has reduced phase-separation, excellent processibility, isotropic structure and very small pores with a size of a few nanometers or less.
摘要翻译：本发明涉及对于具有下一代的高密度和高性能的半导体所必需的低介电材料，特别涉及一种制备具有低介电常数的多孔层间绝缘膜的方法，所述多孔层间绝缘膜含有尺寸为几纳米或更小的孔。本发明提供了制备半导体器件介电常数非常低的多孔布线层间绝缘膜的方法，包括以下步骤：a）制备成孔有机分子和基质树脂的混合络合物，b）将混合络合物在基板上，c）加热该混合络合物以除去其中的有机分子，从而在该复合物内形成孔。根据本发明的方法制备的具有非常低的介电常数的多孔布线层间绝缘膜具有减少的相分离具有优异的加工性，各向同性结构和尺寸为a的非常小的孔几纳米以下。

8. 发明授权

US07470636B2 Semiconductor interlayer dielectric material and a semiconductor device using the same 有权
标题翻译：半导体层间绝缘材料和使用其的半导体器件
公开(公告)号：US07470636B2
公开(公告)日：2008-12-30
申请号：US11639318
申请日：2006-12-15
申请人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
发明人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
IPC分类号： H01L21/469 , C08G77/04
CPC分类号： H01L21/3122 , C08G77/50 , C08G77/52 , H01L21/02126 , H01L21/02216 , H01L21/02282 , Y10T428/31663
摘要： The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula R1mR2nSiX4−m−n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula R3pY3−pSi-M-SiR4qZ3−q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).
摘要翻译：本发明涉及低密度和高性能的下一代半导体所必需的低介电材料，更具体地涉及一种热稳定且具有良好的成膜性能和优异的机械性能的低介电材料，包括低电介质材料和使用电介质膜制造的半导体器件。本发明还提供一种在组分（a）和组分（b）的树脂组合物制备的网络中具有柔性有机桥单元的有机硅酸盐聚合物，其中组分（a）是式R 1 m R 2 n SiX 4-mn的有机硅烷（其中可以相同或不同的R1和R2各自为不可水解基团; X为可水解基团; m和n为0〜3的整数，满足0≤m+n≤3）和/或其部分水解的缩合物，其中组分（b）是式R3pY3-pSi-M-SiR4qZ3-q的有机桥连硅烷（其中R3和R4可以相同或不同，可水解基团; Y和Z可以相同或不同，为可水解基团; p和q为0〜2的整数）和/或具有有机桥单元（Si-M-Si）的环状低聚物。

9. 发明授权

US06696538B2 Semiconductor interlayer dielectric material and a semiconductor device using the same 有权
标题翻译：半导体层间绝缘材料和使用其的半导体器件
公开(公告)号：US06696538B2
公开(公告)日：2004-02-24
申请号：US09776383
申请日：2001-02-02
申请人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
发明人： Min-Jin Ko , Hye-Yeong Nam , Jung-Won Kang , Myung-Sun Moon , Dong-Seok Shin
IPC分类号： C08G7706
CPC分类号： H01L21/02126 , C08G77/50 , C08G77/52 , H01L21/02282 , H01L21/02337 , H01L21/02359 , H01L21/3122
摘要： The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b). a) organosilane of the formula R1mR2nSiX4−m−n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof b) organic bridged silane of the formula R3pY3−pSi—M—SiR4qZ3−q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si—M—Si).
摘要翻译：本发明涉及低密度和高性能的下一代半导体所必需的低介电材料，更具体地涉及一种热稳定且具有良好的成膜性能和优异的机械性能的低介电材料，包括低电介质材料和使用电介质膜制造的半导体器件。本发明提供一种在由组分（a）和组分（b）的树脂组合物制备的网络中具有柔性有机桥单元的有机硅酸盐聚合物。 a）式R 1 mR 2 n SiX 4-mn的有机硅烷（其中可以相同或不同的R 1和R 2各自是不可水解基团; X是可水解基团 ; m和n为0至3的整数，满足0 <= m + n <= 3）和/或部分水解的缩合物b）式R 3 pY 3-pSi-M-SiR的有机桥连硅烷 4> qZ3-q（其中R 3和R 4各自可以是相同或不同的是不可水解的基团; 可以相同或不同的Y和Z中的每一个是可水解基团; p和q为0〜2的整数）和/或具有有机桥单元（Si-M-Si）的环状低聚物。

10. 发明申请

US20050266699A1 Organosilicate polymer and insulating film therefrom 有权
标题翻译：有机硅酸酯聚合物及其绝缘膜
公开(公告)号：US20050266699A1
公开(公告)日：2005-12-01
申请号：US11172961
申请日：2005-07-05
申请人： Min-Jin Ko , Bum-Gyu Choi , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang , Hae-Young Nam , Young-Duk Kim , Gwi-Gwon Kang
发明人： Min-Jin Ko , Bum-Gyu Choi , Dong-Seok Shin , Myung-Sun Moon , Jung-Won Kang , Hae-Young Nam , Young-Duk Kim , Gwi-Gwon Kang
IPC分类号： C08G77/50 , C08G77/02 , H01B3/46 , H01L21/312 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/02126 , C08G77/50 , C09D183/14 , H01L21/02282 , H01L21/3121
摘要： Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.
摘要翻译：提供一种半导体器件用绝缘膜的制造方法。该方法包括制备用于形成绝缘膜的组合物，其中所述组合物包含a）有机硅酸盐聚合物和b）有机溶剂。将组合物涂布在半导体器件的基板上以制备涂覆的绝缘膜，并且将涂覆的绝缘膜干燥和固化。还提供了如上所述制备的绝缘膜以及包括绝缘膜的半导体器件。

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