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1. 发明授权

US08207539B2 Light-emitting device having a thinned structure and the manufacturing method thereof 有权
标题翻译：具有薄型结构的发光装置及其制造方法
公开(公告)号：US08207539B2
公开(公告)日：2012-06-26
申请号：US12481048
申请日：2009-06-09
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

2. 发明授权

US08486729B2 Light-emitting device having a thinned structure and the manufacturing method thereof 有权
标题翻译：具有薄型结构的发光装置及其制造方法
公开(公告)号：US08486729B2
公开(公告)日：2013-07-16
申请号：US13478698
申请日：2012-05-23
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

3. 发明申请

US20120231560A1 LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：具有薄壁结构的发光装置及其制造方法
公开(公告)号：US20120231560A1
公开(公告)日：2012-09-13
申请号：US13478698
申请日：2012-05-23
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L21/66
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

4. 发明授权

US08882290B2 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US08882290B2
公开(公告)日：2014-11-11
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chia-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21K2/00 , H01L25/075 , F21K99/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

5. 发明申请

US20070263384A1 Light-mixing type light-emitting apparatus 有权
标题翻译：光混合型发光装置
公开(公告)号：US20070263384A1
公开(公告)日：2007-11-15
申请号：US11798521
申请日：2007-05-15
申请人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
发明人： Min-Hsun Hsieh , Chai-Liang Hsu , Chien-Fu Huang , Chih-Chiang Lu , Chun-Yi Wu
IPC分类号： F21V9/00
CPC分类号： H01L25/0753 , F21K9/00 , F21K9/62 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
摘要翻译：光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

6. 发明授权

US07973331B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07973331B2
公开(公告)日：2011-07-05
申请号：US12318552
申请日：2008-12-31
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

7. 发明申请

US20110254046A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110254046A1
公开(公告)日：2011-10-20
申请号：US13174183
申请日：2011-06-30
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/62
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

8. 发明申请

US20090173963A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20090173963A1
公开(公告)日：2009-07-09
申请号：US12318552
申请日：2008-12-31
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.
摘要翻译：本发明涉及一种发光装置。本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少基板的第一倾斜侧壁和电连接图案化的半导体结构。

9. 发明授权

US08513699B2 Light-emitting device 有权
公开(公告)号：US08513699B2
公开(公告)日：2013-08-20
申请号：US13174183
申请日：2011-06-30
申请人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
发明人： Chia-Liang Hsu , Chih-Chiang Lu , Chien-Fu Huang , Chun-Yi Wu
IPC分类号： H01L33/62
CPC分类号： H01L33/385 , H01L24/24 , H01L24/82 , H01L33/20 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

10. 发明申请

US20120256164A1 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20120256164A1
公开(公告)日：2012-10-11
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

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