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1. 发明授权

US08486729B2 Light-emitting device having a thinned structure and the manufacturing method thereof 有权
标题翻译：具有薄型结构的发光装置及其制造方法
公开(公告)号：US08486729B2
公开(公告)日：2013-07-16
申请号：US13478698
申请日：2012-05-23
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

2. 发明申请

US20120231560A1 LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：具有薄壁结构的发光装置及其制造方法
公开(公告)号：US20120231560A1
公开(公告)日：2012-09-13
申请号：US13478698
申请日：2012-05-23
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L21/66
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

3. 发明授权

US08207539B2 Light-emitting device having a thinned structure and the manufacturing method thereof 有权
标题翻译：具有薄型结构的发光装置及其制造方法
公开(公告)号：US08207539B2
公开(公告)日：2012-06-26
申请号：US12481048
申请日：2009-06-09
申请人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
发明人： Min-Hsun Hsieh , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Jui-Hung Yeh , Shih-Chin Hung , Yu-Wei Tu , Chun-Yi Wu , Wei-Chih Peng
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/382 , H01L33/387 , H01L33/642
摘要： A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.
摘要翻译：具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

4. 发明授权

US08299483B2 Light-emitting semiconductor apparatus 有权
标题翻译：发光半导体装置
公开(公告)号：US08299483B2
公开(公告)日：2012-10-30
申请号：US12652373
申请日：2010-01-05
申请人： Chih-Chiang Lu , Wei-Chih Peng , Chien-Yuan Wang , Wei-Yo Chen , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Chien-Yuan Wang , Wei-Yo Chen , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/46
摘要： A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.
摘要翻译：发光半导体装置包括发光结构，反射结构和载体。发光结构包括第一类型半导体层，第二类型半导体层和位于第一类型半导体层和第二类型半导体层之间的发光层。反射结构具有第一透明导电层，第一图案化反射层，第二透明导电层和第二图案化反射层。第一图案化反射层设置在第一透明导电层和第二透明导电层之间，并且具有用于物理连接第一透明导电层和第二透明导电层的开口。第二透明导电层设置在第一图案化反射层和第二图案化反射层之间。第二图案化反射层位于与开口对应的区域上。发光结构和载体分别在反射结构的两侧。

5. 发明授权

US08569083B2 Light-emitting device with narrow dominant wavelength distribution and method of making the same 有权
公开(公告)号：US08569083B2
公开(公告)日：2013-10-29
申请号：US12711678
申请日：2010-02-24
申请人： Chih-Chiang Lu , Shu-Ting Hsu , Yen-Wen Chen , Chien-Yuan Wang , Ru-Shi Liu , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Shu-Ting Hsu , Yen-Wen Chen , Chien-Yuan Wang , Ru-Shi Liu , Min-Hsun Hsieh
IPC分类号： H01L21/00
CPC分类号： H01L33/504 , H01L27/156 , H01L33/44 , H01L33/508 , H01L2224/18
摘要： This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

6. 发明授权

US08692270B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08692270B2
公开(公告)日：2014-04-08
申请号：US11878193
申请日：2007-07-23
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/01322 , H01L2924/00014
摘要： A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
摘要翻译：一种发光装置，包括形成在基座上的基座，芯片载体和形成在芯片载体上的发光芯片。发光装置还包括形成在基座上并包围发光芯片和芯片载体的反射杯和用于封装发光芯片的透明封装材料。

7. 发明申请

US20080067534A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20080067534A1
公开(公告)日：2008-03-20
申请号：US11878193
申请日：2007-07-23
申请人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
发明人： Min-Hsun Hsieh , Ta-Cheng Hsu , ML Tsai , Chih-Chiang Lu , Chien-Yuan Wang , Yen-Wen Chen , Ya-Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/01322 , H01L2924/00014
摘要： This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
摘要翻译：本公开涉及一种发光装置，其包括基座，形成在基座上的芯片载体，形成在芯片载体上的发光芯片，形成在基座上并包围发光芯片和芯片载体的反射杯以及用于封装发光芯片的透明封装材料。

8. 发明授权

US07884376B2 Optoelectronic semiconductor device and manufacturing method thereof 有权
标题翻译：光电半导体器件及其制造方法
公开(公告)号：US07884376B2
公开(公告)日：2011-02-08
申请号：US12230203
申请日：2008-08-26
申请人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60
摘要： An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.
摘要翻译：本发明的实施例公开了一种光电子半导体器件，其包括能够执行光能和电能之间的转换的半导体系统; 形成在所述半导体系统的至少两个表面上的界面层; 电导体以及将半导体系统电连接到电导体的电连接器。

9. 发明申请

US20080315236A1 Optoelectronic semiconductor device and manufacturing method thereof 有权
标题翻译：光电半导体器件及其制造方法
公开(公告)号：US20080315236A1
公开(公告)日：2008-12-25
申请号：US12230203
申请日：2008-08-26
申请人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60
摘要： An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.
摘要翻译：本发明的实施例公开了一种光电子半导体器件，其包括能够执行光能和电能之间的转换的半导体系统; 形成在所述半导体系统的至少两个表面上的界面层; 电导体以及将半导体系统电连接到电导体的电连接器。

10. 发明申请

US20110095325A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电半导体器件及其制造方法
公开(公告)号：US20110095325A1
公开(公告)日：2011-04-28
申请号：US12984169
申请日：2011-01-04
申请人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
发明人： Chih-Chiang Lu , Wei-Chih Peng , Shiau-Huei San , Min-Hsun Hsieh
IPC分类号： H01L33/50
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60
摘要： An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.
摘要翻译：本发明的实施例公开了一种光电子半导体器件，其包括能够执行光能和电能之间的转换的半导体系统; 形成在所述半导体系统的至少两个表面上的界面层; 电导体以及将半导体系统电连接到电导体的电连接器。

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