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1. 发明申请

US20090181482A1 Flat panel display and method of fabricating the same 有权
公开(公告)号：US20090181482A1
公开(公告)日：2009-07-16
申请号：US12379817
申请日：2009-03-02
申请人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
发明人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
IPC分类号： H01L21/28
CPC分类号： H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0541 , H01L51/5218 , H01L2251/5315
摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

2. 发明授权

US07875475B2 Flat panel display and method of fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07875475B2
公开(公告)日：2011-01-25
申请号：US12379817
申请日：2009-03-02
申请人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
发明人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
IPC分类号： H01L21/00 , H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0541 , H01L51/5218 , H01L2251/5315
摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.
摘要翻译：平板显示装置包括具有限定像素的开口的栅极绝缘层。平板显示装置包括：基板; 形成在所述基板上的源电极和漏电极; 与源电极和漏极接触的半导体层; 形成在基板上的栅极; 形成在所述源极和漏极之间的绝缘层和所述栅极，并且包括开口; 以及由绝缘层的开口部分地露出的像素电极。绝缘层用作限定像素电极的栅极绝缘层和像素限定层。

3. 发明申请

US20070007515A1 Flat panel display and method of fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US20070007515A1
公开(公告)日：2007-01-11
申请号：US11480549
申请日：2006-07-05
申请人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
发明人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
IPC分类号： H01L29/08
CPC分类号： H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0541 , H01L51/5218 , H01L2251/5315
摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.
摘要翻译：平板显示装置包括具有限定像素的开口的栅极绝缘层。平板显示装置包括：基板; 形成在所述基板上的源电极和漏电极; 与源电极和漏极接触的半导体层; 形成在基板上的栅极; 形成在所述源极和漏极之间的绝缘层和所述栅极，并且包括开口; 以及由绝缘层的开口部分地露出的像素电极。绝缘层用作限定像素电极的栅极绝缘层和像素限定层。

4. 发明授权

US07518140B2 Flat panel display and method of fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07518140B2
公开(公告)日：2009-04-14
申请号：US11480549
申请日：2006-07-05
申请人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
发明人： Min-Chul Suh , Taek Ahn , Yong-Woo Park
IPC分类号： H01L29/08
CPC分类号： H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0541 , H01L51/5218 , H01L2251/5315
摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.
摘要翻译：平板显示装置包括具有限定像素的开口的栅极绝缘层。平板显示装置包括：基板; 形成在所述基板上的源电极和漏电极; 与源电极和漏极接触的半导体层; 形成在基板上的栅极; 形成在所述源极和漏极之间的绝缘层和所述栅极，并且包括开口; 以及由绝缘层的开口部分地露出的像素电极。绝缘层用作限定像素电极的栅极绝缘层和像素限定层。

5. 发明申请

US20060267003A1 Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT 审中-公开
标题翻译：有机薄膜晶体管（OTFT），其制造方法，以及包括OTFT的平板显示器
公开(公告)号：US20060267003A1
公开(公告)日：2006-11-30
申请号：US11417046
申请日：2006-05-04
申请人： Min-Chul Suh , Yong-Woo Park , Yeon-Gon Mo
发明人： Min-Chul Suh , Yong-Woo Park , Yeon-Gon Mo
IPC分类号： H01L29/08
CPC分类号： H01L51/0516 , H01L27/3244 , H01L51/0002 , H01L51/0003 , H01L51/0036 , H01L51/0038 , H01L51/0053 , H01L51/0096 , H01L51/052 , H01L51/0525 , H01L51/0529 , H01L51/0541 , H01L51/0545 , H01L2251/5338 , Y02E10/549
摘要： An Organic Thin Film Transistor (OTFT) having improved characteristics due to surface-treating of a portion of a substrate corresponding to a channel region using a fluoride-based gas to stabilize the channel region, a method of fabricating such an OTFT, and an organic Electroluminescent (EL) display including such an OTFT includes: treating a predetermined portion of a surface of a substrate; forming a source electrode and a drain electrode on portions of the substrate which have not been surface-treated; forming a semiconductor layer to contact the surface-treated portion of the substrate; forming a gate insulating layer on the substrate; and forming a gate on the gate insulating layer. The substrate is plasma surface-treated using a fluoride-based gas such as CF4 or C3F8.
摘要翻译：一种有机薄膜晶体管（OTFT），其特征在于使用基于氟化物的气体来对应于沟道区域的基板的一部分进行表面处理，以稳定沟道区域，制造这种OTFT的方法以及有机薄膜晶体管包括这种OTFT的电致发光（EL）显示器包括：处理基板的表面的预定部分; 在所述基板的未被表面处理的部分上形成源电极和漏电极; 形成半导体层以接触所述基板的表面处理部分; 在所述基板上形成栅极绝缘层; 以及在栅极绝缘层上形成栅极。基材是使用氟化物基气体如CF 4或C 3 F 8 N进行等离子体表面处理。

6. 发明授权

US07800102B2 Organic thin film transistor including a self-assembly monolayer between an insulating layer and an organic semiconductor layer and flat panel display comprising the same 有权
标题翻译：包括在绝缘层和有机半导体层之间的自组装单层的有机薄膜晶体管和包括其的平板显示器
公开(公告)号：US07800102B2
公开(公告)日：2010-09-21
申请号：US11582467
申请日：2006-10-18
申请人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
发明人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L27/3274 , H01L51/0545
摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.
摘要翻译：有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基和未取代或取代的C 2 -C 30杂芳基的末端基团。在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。

7. 发明申请

US20090170291A1 Method of fabricating an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20090170291A1
公开(公告)日：2009-07-02
申请号：US12318915
申请日：2009-01-12
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

8. 发明授权

US07495252B2 Organic thin film transistor, method of fabricating the same, and flat panel display having the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，其制造方法以及具有有机薄膜晶体管的平板显示器
公开(公告)号：US07495252B2
公开(公告)日：2009-02-24
申请号：US11436531
申请日：2006-05-19
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

9. 发明申请

US20080182356A1 Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20080182356A1
公开(公告)日：2008-07-31
申请号：US12078171
申请日：2008-03-27
申请人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
发明人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.
摘要翻译：薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米颗粒和固化树脂。薄膜晶体管的导电层可以具有精确的图案。薄膜晶体管可以通过低成本，低温工艺制造。

10. 发明申请

US20080157071A1 THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY INCLUDING THE SAME 有权
标题翻译：薄膜晶体管和平板显示器包括它们
公开(公告)号：US20080157071A1
公开(公告)日：2008-07-03
申请号：US12047654
申请日：2008-03-13
申请人： Taek AHN , Min-Chul Suh , Jin-Saong Park , Seok-Jong Lee , Jung-Han Shin
发明人： Taek AHN , Min-Chul Suh , Jin-Saong Park , Seok-Jong Lee , Jung-Han Shin
IPC分类号： H01L51/30
CPC分类号： H01L51/0533 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

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