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1. 发明申请

US20080182356A1 Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20080182356A1
公开(公告)日：2008-07-31
申请号：US12078171
申请日：2008-03-27
申请人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
发明人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.
摘要翻译：薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米颗粒和固化树脂。薄膜晶体管的导电层可以具有精确的图案。薄膜晶体管可以通过低成本，低温工艺制造。

2. 发明申请

US20060118789A1 Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20060118789A1
公开(公告)日：2006-06-08
申请号：US11291928
申请日：2005-12-02
申请人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
发明人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
IPC分类号： H01L29/04
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.
摘要翻译：薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米颗粒和固化树脂。薄膜晶体管的导电层可以具有精确的图案。薄膜晶体管可以通过低成本，低温工艺制造。

3. 发明申请

US20090170291A1 Method of fabricating an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20090170291A1
公开(公告)日：2009-07-02
申请号：US12318915
申请日：2009-01-12
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L21/20 , H01L21/28
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

4. 发明授权

US07495252B2 Organic thin film transistor, method of fabricating the same, and flat panel display having the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，其制造方法以及具有有机薄膜晶体管的平板显示器
公开(公告)号：US07495252B2
公开(公告)日：2009-02-24
申请号：US11436531
申请日：2006-05-19
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

5. 发明授权

US07919396B2 Method of fabricating an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US07919396B2
公开(公告)日：2011-04-05
申请号：US12318915
申请日：2009-01-12
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
摘要翻译：一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案，所述分离图案适于限定半导体层的沟道区。

6. 发明申请

US20060267094A1 Organic thin film transistor, method of fabricating the same, and flat panel display having the organic thin film transistor 有权
公开(公告)号：US20060267094A1
公开(公告)日：2006-11-30
申请号：US11436531
申请日：2006-05-19
申请人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
发明人： Taek Ahn , Min-Chul Suh , Yeon-Gon Mo
IPC分类号： H01L27/12
CPC分类号： H01L27/3274 , H01L27/283 , H01L51/0017 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

7. 发明申请

US20060237789A1 Thin film transistor (TFT) and flat panel display including the TFT 有权
公开(公告)号：US20060237789A1
公开(公告)日：2006-10-26
申请号：US11403011
申请日：2006-04-13
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L27/12
CPC分类号： H01L51/0545 , H01L27/1214 , H01L27/283 , H01L29/78651 , H01L29/78681 , H01L51/0017
摘要： A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.

8. 发明授权

US07645812B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07645812B2
公开(公告)日：2010-01-12
申请号：US11339657
申请日：2006-01-26
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： A61K6/083
CPC分类号： H01L51/0038 , H01L51/0094 , H01L51/0541
摘要： A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.
摘要翻译：用于形成薄膜晶体管缓冲层的聚（对亚苯基亚乙烯基）（PPV））化合物，其中R为被环己基或苯基取代的C 1 -C 20甲硅烷基，m为2至4的整数，n为 1到3000的整数; 用于形成薄膜晶体管的缓冲层的组合物，其用于形成由式1表示的化合物，并且包括卤素前体聚合物，光碱产生剂和溶剂; 包括使用所述PPV化合物制造的缓冲层的薄膜晶体管; 以及包括薄膜晶体管的平板显示器。可以通过使用含硅PPV前体的光刻图案在有机TFT的有机半导体层下形成图案化缓冲层。因此，可以提高有机TFT的有机半导体层的对准，从而可以提高有机TFT的特性。

9. 发明申请

US20060169974A1 Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的平板显示装置
公开(公告)号：US20060169974A1
公开(公告)日：2006-08-03
申请号：US11338089
申请日：2006-01-24
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0541 , H01L51/0562
摘要： Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.
摘要翻译：提供一种薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及沟道形成促进层，其与有机半导体层的沟道区域的相反区域接触，并且包含具有官能团的化合物，其将朝向沟道区域的相对区域移动的电荷固定到渠道区域。因此，薄膜晶体管具有低阈值电压和优异的电荷迁移率。

10. 发明授权

US08318533B2 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08318533B2
公开(公告)日：2012-11-27
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

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