专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07790551B2 Method for fabricating a transistor having a recess gate structure 失效
标题翻译：一种制造具有凹槽栅结构的晶体管的方法
公开(公告)号：US07790551B2
公开(公告)日：2010-09-07
申请号：US12603906
申请日：2009-10-22
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01L21/336
CPC分类号： H01L29/4236 , H01L21/26586 , H01L21/28061 , H01L29/1041 , H01L29/516 , H01L29/66621
摘要： A transistor having a recess gate structure and a method for fabricating the same. The transistor includes a gate insulating layer formed on the inner walls of first trenches formed in a semiconductor substrate; a gate conductive layer formed on the gate insulating layer for partially filling the first trenches; gate electrodes formed on the gate conductive layer for completely filling the first trenches, and surrounded by the gate conductive layer; channel regions formed in the semiconductor substrate along the first trenches; and source/drain regions formed in a shallow portion of the semiconductor substrate.
摘要翻译：具有凹陷栅极结构的晶体管及其制造方法。晶体管包括形成在形成在半导体衬底中的第一沟槽的内壁上的栅极绝缘层; 形成在所述栅极绝缘层上以部分地填充所述第一沟槽的栅极导电层; 栅极电极，形成在栅极导电层上，用于完全填充第一沟槽，并被栅极导电层包围; 形成在半导体衬底中的第一沟槽区; 以及形成在半导体衬底的浅部中的源极/漏极区域。

2. 发明授权

US07687350B2 Method for manufacturing semiconductor memory device using asymmetric junction ion implantation 失效
标题翻译：使用不对称结离子注入制造半导体存储器件的方法
公开(公告)号：US07687350B2
公开(公告)日：2010-03-30
申请号：US11450816
申请日：2006-06-09
申请人： Min Yong Lee , Kyoung Bong Rouh , Seung Woo Jin
发明人： Min Yong Lee , Kyoung Bong Rouh , Seung Woo Jin
IPC分类号： H01L21/336
CPC分类号： H01L27/10855 , H01L27/10876 , H01L27/10888 , H01L29/1037 , H01L29/66621 , H01L29/66659
摘要： A method for manufacturing a semiconductor memory device using asymmetric junction ion implantation, including performing ion implantation for adjusting a threshold voltage to a semiconductor substrate, forming a gate stack on the semiconductor substrate to define a storage node junction region and a bit line junction region, implanting a first conductive impurity ion and a second conductive impurity ion using a mask layer pattern covering the storage node junction region while exposing the bit line junction region, forming a gate spacer layer at both sides of the gate stack, and implanting the first conductive impurity ion using the gate stack and the gate spacer layer as an ion implantation mask layer to form a storage node junction region and a bit line junction region having different impurity concentrations, and different junction depths from each other.
摘要翻译：一种制造使用非对称结离子注入的半导体存储器件的方法，包括执行用于调整对半导体衬底的阈值电压的离子注入，在半导体衬底上形成栅叠层以限定存储节点结区域和位线结区域，使用覆盖存储节点结区域的掩模层图案注入第一导电杂质离子和第二导电杂质离子，同时暴露位线结区域，在栅极堆叠的两侧形成栅极间隔层，以及注入第一导电杂质使用栅极堆叠和栅极间隔层作为离子注入掩模层，以形成具有不同杂质浓度和不同结深度的存储节点结区域和位线结区域。

3. 发明申请

US20080128640A1 Partial ion implantation apparatus and method using bundled beam 有权
标题翻译：部分离子注入装置和使用捆束的方法
公开(公告)号：US20080128640A1
公开(公告)日：2008-06-05
申请号：US11445643
申请日：2006-06-01
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01J37/08
CPC分类号： H01J37/3172 , H01J37/045 , H01J2237/30472 , H01J2237/31703 , H01J2237/31708
摘要： An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.
摘要翻译：离子注入装置包括用于产生初始离子束的离子束源，捆扎离子束发生器，其适于基于预定频率将初始离子束改变成束状离子束，以在经过第一次时通过束状离子束初始离子束第二次，用于加速已经通过离子束发生器的离子束的束线，以及用于在其中布置晶片以使由束线加速的离子束被植入晶片的终端站，所述终端站操作以沿垂直于离子束注入方向的方向移动所述晶片，以将所述束状离子束注入所述晶片的第一区域中，并将所述初始离子束注入所述晶片的第二区域。

4. 发明授权

US08343859B2 Non-uniform ion implantation apparatus and method thereof 失效
标题翻译：非均匀离子注入装置及其方法
公开(公告)号：US08343859B2
公开(公告)日：2013-01-01
申请号：US12044722
申请日：2008-03-07
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01L21/265
摘要： A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer. Among the wide ion beams, at least one wide ion beam has a different dose from that of at least one different wide ion beam. Since the wide ion beams are irradiated at different doses to the wafer, a smooth circular border is formed between the regions to which the impurity ions are implanted to different concentrations. Since the position of the wafer is suitably changed for the wide ion beams, it is possible to control disposition of the regions implanted with the impurity ions of different concentrations.
摘要翻译：不均匀离子注入装置包括宽离子束发生器，其被配置为产生多个宽离子束以照射晶片的整个区域上的至少两个区域，以及晶片旋转装置，其被配置为沿预定方向旋转晶片而由宽离子束发生器产生的宽离子束照射到晶片。在宽离子束中，至少一个宽离子束与至少一个不同的宽离子束的剂量不同。由于宽离子束以不同的剂量照射到晶片，所以在杂质离子被注入到不同浓度的区域之间形成平滑的圆形边界。由于对于宽离子束适当地改变晶片的位置，因此可以控制注入不同浓度的杂质离子的区域的配置。

5. 发明授权

US07678653B2 Method of fabricating a recess gate type transistor 失效
标题翻译：制造凹槽型晶体管的方法
公开(公告)号：US07678653B2
公开(公告)日：2010-03-16
申请号：US12371798
申请日：2009-02-16
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01L21/336
CPC分类号： H01L29/1037 , H01L29/42376 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
摘要翻译：具有凹槽的半导体器件及其制造方法。半导体器件包括在其中形成有反三角形凹槽的半导体衬底; 在半导体衬底上形成具有指定厚度的栅极绝缘膜; 栅电极形成在栅极绝缘膜上，使得栅电极填充反三角形凹部并从半导体衬底的表面突出; 以及形成在半导体衬底中并且彼此相对的第一和第二接合区域，使得相应的一个栅电极插入其间。

6. 发明授权

US07186631B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07186631B2
公开(公告)日：2007-03-06
申请号：US11201843
申请日：2005-08-11
申请人： Seung Woo Jin , Min Yong Lee , Kyoung Bong Rouh
发明人： Seung Woo Jin , Min Yong Lee , Kyoung Bong Rouh
IPC分类号： H01L21/26
CPC分类号： H01L21/28035 , H01L21/26513 , H01L21/823842 , Y10S438/918
摘要： Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped layer for a gate electrode; implanting mixed dopant ions consisting of at least two dopant ions containing 11B ions into the undoped layer, utilizing an ion-implantation mask; and heat-treating the mixed dopant ion-implanted layer.
摘要翻译：提供一种半导体器件的制造方法，包括在半导体衬底上形成器件隔离层; 在其上形成有器件隔离层的半导体衬底的上部形成栅极绝缘层; 形成用于栅电极的未掺杂层; 使用离子注入掩模将包含至少两种含有11+ B离子的掺杂剂离子组成的混合掺杂剂离子注入到未掺杂的层中; 并对混合掺杂剂离子注入层进行热处理。

7. 发明申请

US20090173996A1 Recess Gate Type Transistor 失效
标题翻译：嵌入式晶体管
公开(公告)号：US20090173996A1
公开(公告)日：2009-07-09
申请号：US12371788
申请日：2009-02-16
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01L29/78
CPC分类号： H01L29/1037 , H01L29/42376 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
摘要翻译：具有凹槽的半导体器件及其制造方法。半导体器件包括在其中形成有反三角形凹槽的半导体衬底; 在半导体衬底上形成具有指定厚度的栅极绝缘膜; 栅电极形成在栅极绝缘膜上，使得栅电极填充反三角形凹部并从半导体衬底的表面突出; 以及形成在半导体衬底中并且彼此相对的第一和第二接合区域，使得相应的一个栅电极插入其间。

8. 发明申请

US20090170265A1 Method of Fabricating a Recess Gate Type Transistor 失效
标题翻译：制造栅极型晶体管的方法
公开(公告)号：US20090170265A1
公开(公告)日：2009-07-02
申请号：US12371798
申请日：2009-02-16
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01L21/336
CPC分类号： H01L29/1037 , H01L29/42376 , H01L29/66621 , H01L29/78
摘要： A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.
摘要翻译：具有凹槽的半导体器件及其制造方法。半导体器件包括在其中形成有反三角形凹槽的半导体衬底; 在半导体衬底上形成具有指定厚度的栅极绝缘膜; 栅电极形成在栅极绝缘膜上，使得栅电极填充反三角形凹部并从半导体衬底的表面突出; 以及形成在半导体衬底中并且彼此相对的第一和第二接合区域，使得相应的一个栅电极插入其间。

9. 发明申请

US20080128639A1 Ion implantation apparatus and method for obtaining non-uniform ion implantation energy 有权
标题翻译：用于获得非均匀离子注入能量的离子注入装置和方法
公开(公告)号：US20080128639A1
公开(公告)日：2008-06-05
申请号：US11445542
申请日：2006-06-02
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/3023 , H01J2237/057 , H01J2237/30483 , H01J2237/31703
摘要： An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.
摘要翻译：离子注入装置包括用于产生离子束的离子束源; 植入能量控制器，设置在离子束的路径上，用于控制离子束的离子注入能量，使得具有第一注入能量的离子束产生第一时间段，并且具有第二注入能量的离子束是创造了第二个时期; 用于加速离子束的束线; 以及用于安装衬底的终端站，其中通过射束线加速的离子束被注入到衬底上。

10. 发明授权

US07351627B2 Method of manufacturing semiconductor device using gate-through ion implantation 有权
标题翻译：使用栅极通过离子注入制造半导体器件的方法
公开(公告)号：US07351627B2
公开(公告)日：2008-04-01
申请号：US11272542
申请日：2005-11-10
申请人： Seung Woo Jin , Min Yong Lee , Kyoung Bong Rouh
发明人： Seung Woo Jin , Min Yong Lee , Kyoung Bong Rouh
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L21/2652 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L29/105 , H01L29/6659
摘要： Disclosed herein is a method of manufacturing a semiconductor device via gate-through ion implantation, comprising forming a gate stack on a semiconductor substrate and performing ion implantation for control of the threshold voltage and junction ion implantation for formation of source/drain regions, on the entire surface of the semiconductor substrate having the gate stack formed thereon. In accordance with the present invention, since ion implantation is carried out after formation of the gate stack involving a thermal process, there are no changes in concentrations of implanted dopants due to heat treatment upon formation of the gate stack.
摘要翻译：本文公开了一种通过栅极通过离子注入制造半导体器件的方法，包括在半导体衬底上形成栅极堆叠并执行离子注入以控制用于形成源极/漏极区域的阈值电压和结离子注入半导体衬底的整个表面上形成有栅极叠层。根据本发明，由于在形成包括热处理的栅叠层之后进行离子注入，所以在形成栅叠层时，由于热处理，注入的掺杂剂的浓度没有变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式