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    • 2. 发明授权
    • Method for manufacturing semiconductor memory device using asymmetric junction ion implantation
    • 使用不对称结离子注入制造半导体存储器件的方法
    • US07687350B2
    • 2010-03-30
    • US11450816
    • 2006-06-09
    • Min Yong LeeKyoung Bong RouhSeung Woo Jin
    • Min Yong LeeKyoung Bong RouhSeung Woo Jin
    • H01L21/336
    • H01L27/10855H01L27/10876H01L27/10888H01L29/1037H01L29/66621H01L29/66659
    • A method for manufacturing a semiconductor memory device using asymmetric junction ion implantation, including performing ion implantation for adjusting a threshold voltage to a semiconductor substrate, forming a gate stack on the semiconductor substrate to define a storage node junction region and a bit line junction region, implanting a first conductive impurity ion and a second conductive impurity ion using a mask layer pattern covering the storage node junction region while exposing the bit line junction region, forming a gate spacer layer at both sides of the gate stack, and implanting the first conductive impurity ion using the gate stack and the gate spacer layer as an ion implantation mask layer to form a storage node junction region and a bit line junction region having different impurity concentrations, and different junction depths from each other.
    • 一种制造使用非对称结离子注入的半导体存储器件的方法,包括执行用于调整对半导体衬底的阈值电压的离子注入,在半导体衬底上形成栅叠层以限定存储节点结区域和位线结区域, 使用覆盖存储节点结区域的掩模层图案注入第一导电杂质离子和第二导电杂质离子,同时暴露位线结区域,在栅极堆叠的两侧形成栅极间隔层,以及注入第一导电杂质 使用栅极堆叠和栅极间隔层作为离子注入掩模层,以形成具有不同杂质浓度和不同结深度的存储节点结区域和位线结区域。
    • 4. 发明授权
    • Non-uniform ion implantation apparatus and method thereof
    • 非均匀离子注入装置及其方法
    • US08343859B2
    • 2013-01-01
    • US12044722
    • 2008-03-07
    • Kyoung Bong RouhSeung Woo JinMin Yong Lee
    • Kyoung Bong RouhSeung Woo JinMin Yong Lee
    • H01L21/425
    • H01J37/3171H01L21/265
    • A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer. Among the wide ion beams, at least one wide ion beam has a different dose from that of at least one different wide ion beam. Since the wide ion beams are irradiated at different doses to the wafer, a smooth circular border is formed between the regions to which the impurity ions are implanted to different concentrations. Since the position of the wafer is suitably changed for the wide ion beams, it is possible to control disposition of the regions implanted with the impurity ions of different concentrations.
    • 不均匀离子注入装置包括宽离子束发生器,其被配置为产生多个宽离子束以照射晶片的整个区域上的至少两个区域,以及晶片旋转装置,其被配置为沿预定方向旋转晶片 而由宽离子束发生器产生的宽离子束照射到晶片。 在宽离子束中,至少一个宽离子束与至少一个不同的宽离子束的剂量不同。 由于宽离子束以不同的剂量照射到晶片,所以在杂质离子被注入到不同浓度的区域之间形成平滑的圆形边界。 由于对于宽离子束适当地改变晶片的位置,因此可以控制注入不同浓度的杂质离子的区域的配置。