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    • 5. 发明授权
    • Electron-emitting device manufacturing method and apparatus, driving method, and adjusting method
    • 电子发射器件制造方法和装置,驱动方法和调节方法
    • US06409563B1
    • 2002-06-25
    • US09511386
    • 2000-02-23
    • Miki TamuraKeisuke YamamotoYasuhiro Hamamoto
    • Miki TamuraKeisuke YamamotoYasuhiro Hamamoto
    • H01J902
    • H01J9/027
    • In manufacturing or adjusting an electron-emitting device which has at least two electrodes and emits electrons by applying a voltage between the two electrodes, or before performing normal driving, a voltage V1 is applied which has the following relationship with a maximum voltage value V2 applied as a normal driving voltage to the electron-emitting device between the two electrodes. Giving a current I flowing upon application of a voltage V when the voltage V falling within a voltage range causing electron emission upon application of the voltage between the two electrodes is applied between the two electrodes: I=f(V) and letting f′(V) be the differential coefficient of f(V) at the voltage V, the voltage V1 has a relationship with the voltage V2 that satisfies, upon application of the voltage, the first condition: f(V1)/{V1·f′(V1)−2f(V1)}>f(V2)/{V2·f′(V2)−2f(V2)} Further, letting Xn-1 be the value of the right side of inequality (2) upon a first application of the pulse-like voltage V2 when the voltage V2 is applied as pulses successively twice between the two electrodes after application of the voltage V1, and Xn be the value of the right side of inequality (2) upon a second application of the pulse-like voltage V2, the relationship with the voltage V2 satisfies the second condition that Xn−1 and Xn satisfy: (Xn-1−Xn)/Xn-1≦0.02
    • 在制造或调整具有至少两个电极并通过在两个电极之间施加电压并且在执行正常驱动之前发射电子的电子发射器件时,施加与施加的最大电压值V2具有以下关系的电压V1 作为两个电极之间的电子发射器件的正常驱动电压。 当在两个电极之间施加电压V时,在施加电压V之间施加电压V时,在两个电极之间施加电压V,该电压V在施加电压之间引起电子发射的电压范围内,并且使f'(V)为微分系数 在电压V下的f(V)的电压V1与施加电压时满足第一条件的电压V2具有关系:此外,令Xn-1为不等式(2)的右侧的值 ),在施加电压V1之后,当施加电压V2作为两个电极之间连续两次的脉冲电压V2时,首先施加脉冲状电压V2,并且Xn在第二次施加不等式(2)的右侧 应用脉冲状电压V2,与电压V2的关系满足Xn-1和Xn满足的第二条件:
    • 8. 发明授权
    • Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof
    • 电子发射器件,使用该器件的电子源和图像形成装置及其制造方法
    • US06171162B2
    • 2001-01-09
    • US09413322
    • 1999-10-06
    • Tatsuya IwasakiMasato YamanobeTakeo TsukamotoKeisuke YamamotoYasuhiro Hamamoto
    • Tatsuya IwasakiMasato YamanobeTakeo TsukamotoKeisuke YamamotoYasuhiro Hamamoto
    • H01J902
    • H01J9/027H01J1/316H01J2329/00
    • In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electrdconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3×10−3 Pa, than that of a material of the electroconductive film. A manufacturing method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
    • 在包括电极之间的电子发射器件中,具有电子发射区域的导电膜,导电膜具有形成在电子发射区域中的膜,主要由熔点比材料的熔点高的材料制成 电导膜。 或者,导电膜具有形成在电子发射区域中的膜,主要由具有较高温度的材料制成,其中该材料的材料产生1.3×10 -3 Pa的蒸汽压力,而不是导电膜的材料。 电子发射器件的制造方法包括在导电膜的电子发射区域中形成主要由金属制成的膜的步骤。 电子发射器件具有稳定的特性和改善的电子发射效率。 包括电子发射器件的图像形成装置具有高亮度和优异的操作稳定性。