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1. 发明授权

US06171162B2 Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof 有权
标题翻译：电子发射器件，使用该器件的电子源和图像形成装置及其制造方法
公开(公告)号：US06171162B2
公开(公告)日：2001-01-09
申请号：US09413322
申请日：1999-10-06
申请人： Tatsuya Iwasaki , Masato Yamanobe , Takeo Tsukamoto , Keisuke Yamamoto , Yasuhiro Hamamoto
发明人： Tatsuya Iwasaki , Masato Yamanobe , Takeo Tsukamoto , Keisuke Yamamoto , Yasuhiro Hamamoto
IPC分类号： H01J902
CPC分类号： H01J9/027 , H01J1/316 , H01J2329/00
摘要： In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electrdconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3×10−3 Pa, than that of a material of the electroconductive film. A manufacturing method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
摘要翻译：在包括电极之间的电子发射器件中，具有电子发射区域的导电膜，导电膜具有形成在电子发射区域中的膜，主要由熔点比材料的熔点高的材料制成电导膜。或者，导电膜具有形成在电子发射区域中的膜，主要由具有较高温度的材料制成，其中该材料的材料产生1.3×10 -3 Pa的蒸汽压力，而不是导电膜的材料。电子发射器件的制造方法包括在导电膜的电子发射区域中形成主要由金属制成的膜的步骤。电子发射器件具有稳定的特性和改善的电子发射效率。包括电子发射器件的图像形成装置具有高亮度和优异的操作稳定性。

2. 发明授权

US6147449A Electron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereof 失效
标题翻译：电子发射装置，具有由耐热材料制成的涂膜和电子源以及使用该装置及其制造方法的成像装置
公开(公告)号：US6147449A
公开(公告)日：2000-11-14
申请号：US508906
申请日：1995-07-28
申请人： Tatsuya Iwasaki , Masato Yamanobe , Takeo Tsukamoto , Keisuke Yamamoto , Yasuhiro Hamamoto
发明人： Tatsuya Iwasaki , Masato Yamanobe , Takeo Tsukamoto , Keisuke Yamamoto , Yasuhiro Hamamoto
IPC分类号： H01J9/02 , H01J1/316 , H01J29/04 , H01J31/12 , H01J1/05
CPC分类号： H01J9/027 , H01J1/316 , H01J2329/00
摘要： In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3.times.10.sup.-3 Pa, than that of a material of the electroconductive film. A manufacturing method for an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
摘要翻译：在包括电极之间的电子发射器件中，具有电子发射区域的导电膜，导电膜具有形成在电子发射区域中的膜，主要由熔点比材料的熔点高的材料制成导电膜。或者，导电膜具有形成在电子发射区域中的膜，主要由具有较高温度的材料制成，其中该材料的材料产生1.3×10 -3 Pa的蒸汽压力，而不是导电膜的材料。电子发射器件的制造方法包括在导电膜的电子发射区域中形成主要由金属制成的膜的步骤。电子发射器件具有稳定的特性和改善的电子发射效率。包括电子发射器件的图像形成装置具有高亮度和优异的操作稳定性。

3. 发明授权

US07758762B2 Method for manufacturing an electron-emitting device with first and second carbon films 失效
标题翻译：用于制造具有第一和第二碳膜的电子发射器件的方法
公开(公告)号：US07758762B2
公开(公告)日：2010-07-20
申请号：US11765248
申请日：2007-06-19
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： B44C1/22
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
摘要翻译：电子发射器件包括一对电极和布置在电极之间的导电膜，并且包括携带石墨膜的电子发射区域。石墨膜在使用波长514.5nm，光点直径1μm的激光光源的拉曼光谱分析中，表示散射光的峰值，其中1）位于1,580cm附近的峰（P2） -1大于位于1335cm -1附近的峰（P1）或2）位于1,335cm -1附近的峰（P1）的半峰宽不大于150cm -1。

4. 发明申请

US20080045112A1 METHOD FOR MANUFACTURING AN ELECTRON-EMITTING DEVICE WITH FIRST AND SECOND CARBON FILMS 失效
标题翻译：用第一和第二碳膜制造电子发射装置的方法
公开(公告)号：US20080045112A1
公开(公告)日：2008-02-21
申请号：US11765248
申请日：2007-06-19
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： H01J9/24
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
摘要翻译：电子发射器件包括一对电极和布置在电极之间的导电膜，并且包括携带石墨膜的电子发射区域。该石墨膜在使用波长514.5nm，光斑直径1μm的激光光源的拉曼光谱分析中，表示散射光的峰值，其中1）峰值（P 2）位于1580附近 cm -1大于位于1,335cm -1附近的峰（P 1）或2）位于的峰（P 1）的半峰宽在1,335cm -1附近，不大于150cm -1。

5. 发明申请

US20070249255A1 Method for manufacturing an electron-emitting device with first and second carbon films 审中-公开
标题翻译：用于制造具有第一和第二碳膜的电子发射器件的方法
公开(公告)号：US20070249255A1
公开(公告)日：2007-10-25
申请号：US11754487
申请日：2007-05-29
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： H01J9/00
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
摘要翻译：电子发射器件包括一对电极和布置在电极之间的导电膜，并且包括携带石墨膜的电子发射区域。该石墨膜在使用波长514.5nm，光斑直径1μm的激光光源的拉曼光谱分析中，表示散射光的峰值，其中1）峰值（P 2）位于1580附近 cm -1大于位于1,335cm -1附近的峰（P 1）或2）位于的峰（P 1）的半峰宽在1,335cm -1附近，不大于150cm -1。

6. 发明授权

US06246168B1 Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same 失效
标题翻译：电子发射器件，电子源和图像形成装置及其制造方法
公开(公告)号：US06246168B1
公开(公告)日：2001-06-12
申请号：US08508931
申请日：1995-07-28
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： H01J2946
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
摘要翻译：电子发射器件包括一对电极和布置在电极之间并包含携带石墨膜的电子发射区的导电膜。石墨膜在使用波长514.5nm的激光光源和光点直径为1μm的拉曼光谱分析中显示出散射光的峰值，其中1）位于1,580cm附近的峰（P2） -1大于位于1335cm -1附近的峰（P1）或2）位于1,335cm -1附近的峰（P1）的半峰宽不大于150cm -1。

7. 发明授权

US06179678B2 Method of manufacturing electron-emitting device electron source and image-forming apparatus 有权
标题翻译：制造电子发射器件电子源和图像形成装置的方法
公开(公告)号：US06179678B2
公开(公告)日：2001-01-30
申请号：US09244164
申请日：1999-02-04
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： H01J902
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1&mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
摘要翻译：电子发射器件包括一对电极和布置在电极之间的导电膜，并且包括携带石墨膜的电子发射区域。该石墨膜在使用波长514.5nm，光斑直径1μm的激光光源的拉曼光谱分析中表示，散射光的峰值为1）位于1580cm -1附近的峰（P2） 1大于位于1335cm -1附近的峰（P1）或2）位于1335cm -1附近的峰（P1）的半峰宽不大于150cm -1。

8. 发明授权

US5674100A Method of manufacturing electron-emitting device 失效
标题翻译：制造电子发射器件的方法
公开(公告)号：US5674100A
公开(公告)日：1997-10-07
申请号：US281518
申请日：1994-07-28
申请人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
发明人： Takeo Ono , Hisaaki Kawade , Yoshinobu Sekiguchi , Yasuhiro Hamamoto , Keisuke Yamamoto , Takeo Tsukamoto , Masato Yamanobe
IPC分类号： H01J1/316 , H01J9/02 , H01J1/30
CPC分类号： H01J1/316 , H01J9/027
摘要： An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.
摘要翻译：电子发射器件包括一对相对设置的电极和导电膜，包括布置在电极之间的电子发射区域。在制造电子发射器件的过程中形成电子发射区之后，导电膜的电阻降低。

9. 发明申请

US20060189243A1 Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same 失效
公开(公告)号：US20060189243A1
公开(公告)日：2006-08-24
申请号：US11362899
申请日：2006-02-28
申请人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
发明人： Fumio Kishi , Masato Yamanobe , Takeo Tsukamoto , Toshikazu Ohnishi , Keisuke Yamamoto , Sotomitsu Ikeda , Yasuhiro Hamamoto , Kazuya Miyazaki
IPC分类号： H01J9/24 , H01J9/00
CPC分类号： H01J29/481 , H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165 , H01J2329/00 , H01J2329/0489
摘要： An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 μm, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.

10. 发明授权

US5861227A Methods and manufacturing electron-emitting device, electron source, and image-forming apparatus 失效
标题翻译：制造电子发射器件，电子源和图像形成装置的方法
公开(公告)号：US5861227A
公开(公告)日：1999-01-19
申请号：US533987
申请日：1995-09-27
申请人： Sotomitsu Ikeda , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Tsukamoto , Shinichi Kawate , Toshihiko Takeda , Keisuke Yamamoto , Kazuhiro Sando , Yasuhiro Hamamoto
发明人： Sotomitsu Ikeda , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Tsukamoto , Shinichi Kawate , Toshihiko Takeda , Keisuke Yamamoto , Kazuhiro Sando , Yasuhiro Hamamoto
IPC分类号： H01J1/316 , H01J9/02 , H01J1/02 , G03G15/32
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.
摘要翻译：在其中在设置在基板上的电极之间具有电子发射区的导电膜的电子发射器件的制造方法中，形成电子发射区的步骤包括形成结构潜像的步骤在导电膜中，以及显影结构潜像的步骤。通过使用由上述方法制造的电子发射器件，制造包括排列在衬底上的多个电子发射器件和电子源和图像形成部件的组合的成像装置的电子源。可以控制每个电子发射器件的电子发射区域的位置和形状，以便实现均匀的器件特性，从而导致电子发射器件之间发射的电子量的变化和图像亮度的变化较小。此外，消除了用于形成电子发射区域的大电流流动的需要，因此可以降低布线的电流容量。

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