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1. 发明申请

US20110155563A1 APPARATUS AND METHOD FOR DEPOSITING AND PLANARIZING THIN FILMS OF SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于沉积和平面化半导体膜的薄膜的装置和方法
公开(公告)号：US20110155563A1
公开(公告)日：2011-06-30
申请号：US13043407
申请日：2011-03-08
申请人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
发明人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
IPC分类号： C25D17/10
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
摘要翻译：提供了一种用于在晶片的表面上沉积金属层的电镀设备。在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。在晶片和邻近头之间提供电镀液以产生局部金属电镀。

2. 发明授权

US07153400B2 Apparatus and method for depositing and planarizing thin films of semiconductor wafers 失效
公开(公告)号：US07153400B2
公开(公告)日：2006-12-26
申请号：US10607611
申请日：2003-06-27
申请人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
发明人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
IPC分类号： C25D17/02 , C25D7/12 , C25D5/04 , C25D5/06
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

3. 发明授权

US07947157B2 Apparatus and method for depositing and planarizing thin films of semiconductor wafers 失效
标题翻译：用于沉积和平坦化半导体晶片的薄膜的装置和方法
公开(公告)号：US07947157B2
公开(公告)日：2011-05-24
申请号：US11494997
申请日：2006-07-28
申请人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
发明人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
IPC分类号： C25D5/06 , C25D5/04 , C25D17/14 , C25D17/12 , C25D7/12
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
摘要翻译：提供了一种用于在晶片的表面上沉积金属层的电镀设备。在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。在晶片和邻近头之间提供电镀液以产生局部金属电镀。

4. 发明授权

US07749689B2 Methods for providing a confined liquid for immersion lithography 失效
标题翻译：提供用于浸没光刻的限制液体的方法
公开(公告)号：US07749689B2
公开(公告)日：2010-07-06
申请号：US12055219
申请日：2008-03-25
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： G03F7/26
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以使得能够对衬底的表面进行光刻处理。

5. 发明申请

US20080171292A1 Methods for Providing a Confined Liquid for Immersion Lithography 失效
标题翻译：提供浸没液相色谱液体的方法
公开(公告)号：US20080171292A1
公开(公告)日：2008-07-17
申请号：US12055219
申请日：2008-03-25
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以实现衬底表面的光刻处理。

6. 发明授权

US07367345B1 Apparatus and method for providing a confined liquid for immersion lithography 失效
标题翻译：用于提供用于浸没光刻的限制液体的装置和方法
公开(公告)号：US07367345B1
公开(公告)日：2008-05-06
申请号：US10834548
申请日：2004-04-28
申请人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
发明人： David Hemker , Fred C. Redeker , John Boyd , John M. de Larios , Michael Ravkin , Mikhail Korolik
IPC分类号： B08B3/10 , B08B7/04 , G03C5/00
CPC分类号： G03F7/70341 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在衬底的表面上产生弯月面并且通过弯月面施加光刻光以实现衬底表面的光刻处理。

7. 发明授权

US07875554B2 Method for electroless depositing a material on a surface of a wafer 有权
标题翻译：在晶片的表面上无电沉积材料的方法
公开(公告)号：US07875554B2
公开(公告)日：2011-01-25
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

8. 发明授权

US07358186B2 Method and apparatus for material deposition in semiconductor fabrication 有权
标题翻译：在半导体制造中材料沉积的方法和装置
公开(公告)号：US07358186B2
公开(公告)日：2008-04-15
申请号：US10735216
申请日：2003-12-12
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , B05C5/12
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

9. 发明授权

US08490573B2 Method and apparatus for material deposition 有权
标题翻译：材料沉积的方法和装置
公开(公告)号：US08490573B2
公开(公告)日：2013-07-23
申请号：US12968114
申请日：2010-12-14
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： B05C3/02 , B05D1/18
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

10. 发明申请

US20100170803A1 Method and Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US20100170803A1
公开(公告)日：2010-07-08
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

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