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1. 发明授权

US09184058B2 Methods of forming patterns by using a brush layer and masks 有权
标题翻译：通过使用刷层和掩模形成图案的方法
公开(公告)号：US09184058B2
公开(公告)日：2015-11-10
申请号：US14139582
申请日：2013-12-23
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

2. 发明授权

US09418848B2 Methods of forming patterns with a mask formed utilizing a brush layer 有权
标题翻译：使用由刷层形成的掩模形成图案的方法
公开(公告)号：US09418848B2
公开(公告)日：2016-08-16
申请号：US14873089
申请日：2015-10-01
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/768
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模产生第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

3. 发明申请

US20160027638A1 Methods of Forming Patterns 有权
公开(公告)号：US20160027638A1
公开(公告)日：2016-01-28
申请号：US14873089
申请日：2015-10-01
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/027 , H01L21/033
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

4. 发明申请

US20150179467A1 Methods of Forming Patterns 有权
标题翻译：形成模式的方法
公开(公告)号：US20150179467A1
公开(公告)日：2015-06-25
申请号：US14139582
申请日：2013-12-23
申请人： Micron Technology, Inc. , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

5. 发明授权

US10191371B2 Underlayer composition and method of imaging underlayer 有权
公开(公告)号：US10191371B2
公开(公告)日：2019-01-29
申请号：US14340938
申请日：2014-07-25
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Peter Trefonas, III , Phillip Dene Hustad , Cynthia Pierre
IPC分类号： G03F7/16 , G03F7/40 , G03F7/038 , G03F7/039
摘要： A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

6. 发明申请

US20160053041A1 POLYSTYRENE-POLYACRYLATE BLOCK COPOLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
公开(公告)号：US20160053041A1
公开(公告)日：2016-02-25
申请号：US14808384
申请日：2015-07-24
申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC , REGENTS OF THE UNIVERSITY OF MINNESOTA
发明人： Phillip Dene Hustad , Peter Trefonas, III , Frank Steven Bates , Marc Andrew Hillmyer , Justin Glenn Kennemur
IPC分类号： C08F299/04
CPC分类号： C08F299/0407 , C08F297/026 , C08F299/04 , G03F7/0002 , C08F220/14 , C08F212/14
摘要： Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; and a second block derived from an acrylate monomer; where a chi parameter that measures interactions between the first block and the second block is greater than or equal to about 0.05, when measured at 240° C. Disclosed herein too is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing an acrylate monomer; and where the block copolymer has a chi parameter of greater than or equal to about 0.05, when measured at 240° C.; where the chi parameter is a measure of interactions between the first block and the second block.

7. 发明授权

US10078263B2 Underlayer composition and method of imaging underlayer composition 有权
公开(公告)号：US10078263B2
公开(公告)日：2018-09-18
申请号：US14341022
申请日：2014-07-25
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Peter Trefonas, III , Phillip Dene Hustad , Cynthia Pierre
IPC分类号： G03F7/11 , C08F212/08 , C08F220/18 , G03F7/038 , G03F7/09 , B81C1/00 , G03F7/16 , G03F7/26 , C08F297/02 , G03F7/00
CPC分类号： G03F7/0388 , B81C1/00031 , B81C2201/0149 , C08F212/08 , C08F220/18 , C08F297/026 , G03F7/0002 , G03F7/094 , G03F7/11 , G03F7/165 , G03F7/26
摘要： A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.

8. 发明申请

US20140335455A1 UNDERLAYER COMPOSITION AND METHOD OF IMAGING UNDERLAYER COMPOSITION 审中-公开
标题翻译：底层组合物和成像下层组合物的方法
公开(公告)号：US20140335455A1
公开(公告)日：2014-11-13
申请号：US14341022
申请日：2014-07-25
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC , DOW GLOBAL TECHNOLOGIES LLC
发明人： Peter Trefonas, III , Phillip Dene Hustad , Cynthia Pierre
IPC分类号： G03F7/038 , C08F220/18 , C08F212/08
CPC分类号： G03F7/0388 , B81C1/00031 , B81C2201/0149 , C08F212/08 , C08F220/18 , C08F297/026 , G03F7/0002 , G03F7/094 , G03F7/11 , G03F7/165 , G03F7/26
摘要： A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.
摘要翻译：形成图案的方法包括将通过照射感光层的一部分形成的酸扩散到包含具有酸可分解基团的酸敏感共聚物和共价键合到基材表面的附着基团和/或形成互聚物交联的底层。扩散包括加热底层和感光层。酸敏感基团与扩散的酸反应，在底层上形成具有图案形状的极性区域。去除感光层，形成包含具有对极性区域具有亲和力的第一嵌段的嵌段共聚物的自组装层和对极性区域具有较小亲和性的第二嵌段。第一块形成与极性区对准的域，并且第二块形成与第一块对准的另一域。删除任一域暴露了底层的一部分。

9. 发明申请

US20140335454A1 UNDERLAYER COMPOSITION AND METHOD OF IMAGING UNDERLAYER 审中-公开
标题翻译：底层组合物和成像方法
公开(公告)号：US20140335454A1
公开(公告)日：2014-11-13
申请号：US14340938
申请日：2014-07-25
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC , DOW GLOBAL TECHNOLOGIES LLC
发明人： Peter Trefonas, III , Phillip Dene Hustad , Cynthia Pierre
IPC分类号： G03F7/038
CPC分类号： G03F7/0388 , G03F7/0392 , G03F7/162 , G03F7/165 , G03F7/168 , G03F7/40
摘要： A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.
摘要翻译：形成图案的方法包括将通过照射感光层的一部分产生的酸扩散到包含可酸分解基团和连接基团的酸敏感共聚物的底层中，以形成交联和/或共价键合到衬底的表面。扩散包括加热底层和感光层。酸敏感基团与扩散的酸反应，形成表面形状的极性区域。去除感光层以形成包含具有对极性区域具有亲和性的嵌段的嵌段共聚物的自组装层，以及具有比第一嵌段共聚物亲和性小的嵌段。第一块形成与极性区对准的域，并且第二块形成与第一块对准的域。移除第一或第二域暴露底层的一部分。

10. 发明申请

US20210017195A1 PROCESS FOR FUNCTIONALIZATION OF ORGANO-ZINC COMPOUNDS WITH HALOSILANES USING BASIC NITROGEN CONTAINING HETEROCYCLES AND SILYL-FUNCTIONALIZED COMPOUNDS PREPARED THEREBY 有权
公开(公告)号：US20210017195A1
公开(公告)日：2021-01-21
申请号：US16982490
申请日：2019-03-18
申请人： Dow Global Technologies LLC , Dow Silicones Corporation
发明人： Jordan Reddel , Robert David Grigg , Phillip Dene Hustad , Sukrit Mukhopadhyay , Steven Swier , Ken Kawamoto
IPC分类号： C07F3/06 , C08F2/38 , C08F8/22 , C08F8/42
摘要： A process to functionalize organo-zinc compounds with halosilane electrophiles employs a basic additive. The process includes combining the organo-zinc compound, a halosilanes, and a nitrogen containing heterocycle as the basic additive. The presence of the basic additive facilitates successful substitution. Functionalized silanes and silyl-terminated polyolefins can be prepared using this process. The functionalized silanes may be useful as endblockers for polyorganosiloxanes having SiH and/or silicon bonded aliphatically unsaturated groups capable of undergoing hydrosilylation.

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