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1. 发明申请

US20150179467A1 Methods of Forming Patterns 有权
标题翻译：形成模式的方法
公开(公告)号：US20150179467A1
公开(公告)日：2015-06-25
申请号：US14139582
申请日：2013-12-23
申请人： Micron Technology, Inc. , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

2. 发明授权

US09184058B2 Methods of forming patterns by using a brush layer and masks 有权
标题翻译：通过使用刷层和掩模形成图案的方法
公开(公告)号：US09184058B2
公开(公告)日：2015-11-10
申请号：US14139582
申请日：2013-12-23
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

3. 发明授权

US09418848B2 Methods of forming patterns with a mask formed utilizing a brush layer 有权
标题翻译：使用由刷层形成的掩模形成图案的方法
公开(公告)号：US09418848B2
公开(公告)日：2016-08-16
申请号：US14873089
申请日：2015-10-01
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/768
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
摘要翻译：一些实施例包括形成图案的方法。在材料上形成第一个掩模。第一掩模具有在其中延伸的特征并且限定第一图案。第一种模式在特征分布上具有第一级的均匀性。在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模产生第二掩模。所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。图案从第二个掩模转移到材料中。

4. 发明申请

US20160027638A1 Methods of Forming Patterns 有权
公开(公告)号：US20160027638A1
公开(公告)日：2016-01-28
申请号：US14873089
申请日：2015-10-01
申请人： Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
IPC分类号： H01L21/027 , H01L21/033
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/76816
摘要： Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

5. 发明申请

US20140154886A1 Methods of Processing Semiconductor Substrates In Forming Scribe Line Alignment Marks 有权
标题翻译：在形成划线对准标记中处理半导体衬底的方法
公开(公告)号：US20140154886A1
公开(公告)日：2014-06-05
申请号：US14171848
申请日：2014-02-04
申请人： Micron Technology, Inc.
发明人： William R. Brown , David Kewley , Adam Olson
IPC分类号： H01L21/308
CPC分类号： H01L21/308 , G03F9/708 , G03F9/7084 , H01L21/0337 , H01L21/3086
摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.
摘要翻译：在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。光刻胶沉积在特征上。将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。各对的特征的个体在横截面中具有横向最内侧的侧壁。光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

6. 发明授权

US08956976B2 Methods of processing semiconductor substrates in forming scribe line alignment marks 有权
标题翻译：在形成划线对准标记时处理半导体衬底的方法
公开(公告)号：US08956976B2
公开(公告)日：2015-02-17
申请号：US14171848
申请日：2014-02-04
申请人： Micron Technology, Inc.
发明人： William R. Brown , David Kewley , Adam Olson
IPC分类号： H01L21/302 , H01L21/308 , G03F9/00 , H01L21/033
CPC分类号： H01L21/308 , G03F9/708 , G03F9/7084 , H01L21/0337 , H01L21/3086
摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.
摘要翻译：在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。光刻胶沉积在特征上。将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。各对的特征的个体在横截面中具有横向最内侧的侧壁。光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的内侧间隔开。光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

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