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1. 发明授权

US08328935B2 Method of manufacturing polycrystalline silicon rod 有权
标题翻译：多晶硅棒的制造方法
公开(公告)号：US08328935B2
公开(公告)日：2012-12-11
申请号：US12418165
申请日：2009-04-03
申请人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
发明人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a silicon member, which is cut out from a single-crystalline silicon ingot at an off-angle range of 5 to 40 degrees relative to a crystal habit line of the ingot, is used as the silicon core wire. The single-crystalline silicon ingot is preferably grown by a Czochralski (CZ) method or floating zone (FZ) method, such that the ingot preferably has an interstitial oxygen concentration of 7 ppma to 20 ppma. Silicon rods produced by this method are less likely to suffer a breakage caused by cleavage during the growth process of polycrystalline silicon during CVD, and exhibit improved FZ method success rates. The polycrystalline silicon rods produced by this method also have low impurity contamination and high single-crystallization efficiency.
摘要翻译：本发明是一种制造多晶硅棒的方法，其中通过化学气相沉积（CVD）方法将硅沉积到硅芯线上，使得从断开的单晶硅锭切出的硅构件使用相对于锭的晶体习性线5〜40度的角度范围，作为硅芯线。单晶硅锭优选通过切克劳斯基（CZ）法或浮动区（FZ）法生长，使得锭优选具有7ppma至20ppma的间隙氧浓度。通过该方法制造的硅棒在CVD期间不太可能在多晶硅生长过程中由于断裂引起的断裂，并且显示出改进的FZ方法成功率。通过该方法制造的多晶硅棒也具有低杂质污染和高单结晶效率。

2. 发明申请

US20090269493A1 METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON ROD 有权
标题翻译：制造多晶硅钢球的方法
公开(公告)号：US20090269493A1
公开(公告)日：2009-10-29
申请号：US12418165
申请日：2009-04-03
申请人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
发明人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
IPC分类号： C23C16/24
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is , there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency.
摘要翻译：本发明使用在制造硅棒时，通过CZ法或FZ法生长的单晶硅锭切出的硅构件（单晶硅棒）作为芯线。具体地说，从通过从单晶硅锭切断肩部和尾部获得的主体部分切出平面硅，并进一步切割成细长矩形以获得硅棒。在晶体生长轴取向为<100>的情况下，存在四条晶体习性线，切割出硅棒，使得该表面与晶体习性线形成预定范围的偏角θ。所提供的多晶硅棒具有低杂质污染和高单结晶效率。

3. 发明授权

US06833273B2 Method for evaluating concentration of metallic impurities in silicon wafer 有权
标题翻译：评估硅晶片中金属杂质浓度的方法
公开(公告)号：US06833273B2
公开(公告)日：2004-12-21
申请号：US09937538
申请日：2001-09-25
申请人： Michihiro Mizuno
发明人： Michihiro Mizuno
IPC分类号： G01N3100
CPC分类号： G01N33/20 , G01N31/00 , G01N2033/0095 , Y10T436/255
摘要： A method for evaluating concentration of metal impurities contained in a silicon wafer, which comprises dropping concentrated sulfuric acid onto a surface of the silicon wafer to extract metal impurities solid-solubilized in the inside of the silicon wafer into the concentrated sulfuric acid, and chemically analyzing metal impurities contained in the concentrated sulfuric acid. The problem imposed on high sensitivity evaluation of metals contained in silicon bulk is, in addition to increase of sensitivity of analysis apparatus itself, how to extract metals contained in a silicon wafer to a surface and recover them. This problem can be solved by the method of the present invention.
摘要翻译：一种用于评估硅晶片中所含的金属杂质的浓度的方法，其包括将浓硫酸滴加到硅晶片的表面上，以将固溶于硅晶片内部的金属杂质提取到浓硫酸中，并进行化学分析金属杂质含在浓硫酸中。除了增加分析装置本身的灵敏度之外，如何将包含在硅晶片中的金属提取到表面并回收它们，对硅体中包含的金属的高灵敏度评估施加的高灵敏度评估的问题。这个问题可以通过本发明的方法来解决。

4. 发明授权

US5101665A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US5101665A
公开(公告)日：1992-04-07
申请号：US598432
申请日：1990-10-16
申请人： Michihiro Mizuno
发明人： Michihiro Mizuno
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06 , G01L13/02
CPC分类号： G01L19/148 , G01L13/025 , G01L19/147 , G01L9/06 , H01L2224/48091
摘要： A semiconductor chip with a gauge pressure sensor section and an absolute pressure sensor section is anodically bonded, in a vacuum, to a glass mount with an evacuated space between the absolute-pressure sensor section and the mated surface portion of the glass mount. The pressure to be measured is received by the reverse surface of the gauge pressure sensor section. Since no complicated package is mounted within the outer package, the assembly of the sensor is easy. Further, since the pressure sensor has two sensor sections, namely, the gauge pressure sensor section and the absolute pressure sensor section, the sensor can be used as an absolute pressure sensor of the reverse-surface pressure-receiving type.
摘要翻译：具有表压传感器部分和绝对压力传感器部分的半导体芯片在真空中阳极结合到在绝对压力传感器部分和玻璃底座的配合表面部分之间具有抽空空间的玻璃安装座。要测量的压力由表压传感器部分的反面接收。由于在外包装内没有安装复杂的包装，所以传感器的组件很容易。此外，由于压力传感器具有两个传感器部分，即表压传感器部分和绝对压力传感器部分，传感器可以用作反面受压型的绝对压力传感器。

5. 发明授权

US5220305A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US5220305A
公开(公告)日：1993-06-15
申请号：US767627
申请日：1991-09-30
申请人： Keiji Nagatsu , Michihiro Mizuno
发明人： Keiji Nagatsu , Michihiro Mizuno
IPC分类号： G01L9/04 , G01L9/00 , H01L21/822 , H01L27/04 , H01L29/84
CPC分类号： G01L9/0054 , G01L9/0055
摘要： A semiconductor pressure sensor chip has a pattern including first diffusion sections in which external connection contacts are formed. Resistors are connected to the first diffusion sections through second diffusion sections in a bridge circuit such that the distances between a contact and the second diffusion sections connected to a first diffusion section where the contact is disposed are equal. This arrangement reduces drift of the offset voltage with changes in temperature, thus providing a high precision semiconductor pressure sensor with an improved yield.
摘要翻译：半导体压力传感器芯片具有包括形成有外部连接触点的第一扩散部的图案。电阻器通过桥接电路中的第二扩散部分连接到第一扩散部分，使得接触件与连接到第一扩散部分的第二扩散部分之间的距离相等。这种布置可以降低偏移电压随温度变化的偏移，从而提供高精度的半导体压力传感器，具有提高的产量。

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