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    • 10. 发明申请
    • SUBSTRATE FOR COMPOUND SEMICONDUCTOR SOLAR CELL
    • 复合半导体太阳能电池基板
    • US20100300527A1
    • 2010-12-02
    • US12790213
    • 2010-05-28
    • Hiroshi OkamuraHirofumi YamanoMasanobu MatsubaraShigeyoshi Nishiyama
    • Hiroshi OkamuraHirofumi YamanoMasanobu MatsubaraShigeyoshi Nishiyama
    • H01L31/0216
    • H01L31/0392H01L31/03928Y02E10/541
    • [Problem] A substrate for a compound semiconductor solar cell which maintains excellent elasticity even after a high temperature process at the time of forming a thin film is provided.[Means for Resolution] The substrate for a compound semiconductor solar cell is formed of a steel plate, and a Cr layer having a coating film quantity of 300 to 8000 mg/m2 is formed on a surface of the substrate on a side to which a solar cell layer is laminated. The Cr layer having a coating film quantity of 500 to 3000 mg/m2 may be formed on the surface of the substrate on a side to which the solar cell layer is laminated, and a film forming temperature of the solar cell layer is less than 550° C. The Cr layer having a coating film quantity of 2000 to 8000 mg/m2 may be formed on the surface of the substrate on a side to which the solar cell layer is laminated, and a film forming temperature of the solar cell layer is more than 800° C. The Cr layer having a coating film quantity of 2000 to 5000 mg/m2 may be formed on the surface of the substrate on a side to which the solar cell layer is laminated, and a film forming temperature of the solar cell layer is not less than 550° C. and not more than 800° C. A quantity of Mn component in a steel strip is not more than 2 wt % . A quantity of Fe component in the steel strip is not more than 98 wt %.
    • [问题]提供了一种化合物半导体太阳能电池的基板,其即使在形成薄膜时的高温处理之后也保持优异的弹性。 [解决方法]化合物半导体太阳能电池用基板由钢板形成,并且在基板的表面上形成具有300〜8000mg / m 2的涂膜量的Cr层, 层叠太阳能电池层。 可以在层叠有太阳能电池层的一侧的基板的表面上形成涂膜量为500〜3000mg / m 2的Cr层,并且太阳能电池层的成膜温度小于550 可以在层叠太阳能电池层的基板的表面上形成涂膜量为2000〜8000mg / m 2的Cr层,太阳能电池层的成膜温度为 超过800℃。可以在层叠太阳能电池层的一侧的基板的表面上形成涂膜量为2000〜5000mg / m 2的Cr层,并且形成太阳能电池层的成膜温度 电池层不低于550℃并且不超过800℃。钢带中的Mn组分的量不大于2重量%。 钢带中的Fe成分量不大于98重量%。