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    • 4. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20070068628A1
    • 2007-03-29
    • US11362868
    • 2006-02-28
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • Takeo UchinoTsutomu NakamuraMichiaki Kobayashi
    • H01L21/306C23C16/00
    • H01L21/67769H01L21/67017H01L21/67389H01L21/67775
    • A vacuum processing apparatus having an improved wafer processing efficiency and an improved working efficiency is provided. The vacuum processing apparatus includes a vacuum container in which a specimen is processed with plasma generated from a processing gas supplied to the vacuum container; a transfer container through which the specimen processed in the vacuum container is transferred, the transfer container being coupled to the vacuum container under ambient pressure; a blower for generating an ambient gas flow in the transfer container and an outlet disposed on the transfer container; a storage container for storing the specimen processed in the vacuum container, the storage container being disposed in the ambient gas flow in the transfer container; and an exhauster for exhausting a gas in the storage container.
    • 提供了一种具有改进的晶片处理效率和提高的工作效率的真空处理设备。 真空处理装置包括:真空容器,其中用从供给到真空容器的处理气体产生的等离子体处理试样; 在真空容器中处理的试样被转移通过的转移容器,转印容器在环境压力下连接到真空容器; 用于在所述转移容器中产生环境气流的鼓风机和设置在所述转移容器上的出口; 储存容器,用于储存处理在真空容器中的试样,该储存容器设置在转移容器中的环境气流中; 以及用于排出储存容器中的气体的排气装置。
    • 5. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20070068626A1
    • 2007-03-29
    • US11512309
    • 2006-08-30
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • C23F1/00H01L21/306
    • H01L21/67126H01J37/32495H01J37/3266H01J37/32743
    • A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
    • 提供一种等离子体处理装置,其有助于减少维护所需的时间,从而提高处理效率和装置操作的效率。 真空处理装置包括真空容器,其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室,真空容器连接到该传送室,并且其内部的压力降低,样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件,其可移除地联接以覆盖通道的内壁面,其中,在处理室内用处理室中形成的等离子体处理样品。
    • 6. 发明授权
    • Vacuum chamber
    • 真空室
    • US08532818B2
    • 2013-09-10
    • US12712861
    • 2010-02-25
    • Tomohiro OhashiTsutomu NakamuraHidenobu TanimuraMichiaki Kobayashi
    • Tomohiro OhashiTsutomu NakamuraHidenobu TanimuraMichiaki Kobayashi
    • G06F7/00
    • H01L21/67766H01L21/67778
    • A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.
    • 真空室包括:设置在后方的真空容器,处理对象的晶片在内部处理室内处理; 传送室,其布置在前侧,其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级,其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器,其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置配合的对准机,其中在所述晶片位于所述对准机器的位置的位移量较大的情况下,在将所述晶片对准所述对准机器之后,将所述晶片转移到所述锁定室 超过预定值。
    • 10. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US08048259B2
    • 2011-11-01
    • US11512309
    • 2006-08-30
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • Michiaki KobayashiTsutomu NakamuraTakeo UchinoAkitaka MakinoMasashi Nakagome
    • C23F1/00C23C16/00C23C14/00
    • H01L21/67126H01J37/32495H01J37/3266H01J37/32743
    • A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
    • 提供一种等离子体处理装置,其有助于减少维护所需的时间,从而提高处理效率和装置操作的效率。 真空处理装置包括真空容器,其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室,真空容器连接到该传送室,并且其内部的压力降低,样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件,其可移除地联接以覆盖通道的内壁面,其中,在处理室内用处理室中形成的等离子体处理样品。