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1. 发明申请

US20080237721A1 STRUCTURE AND CIRCUIT TECHNIQUE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
标题翻译：具有可调触发电压的多器件半导体器件的均匀触发的结构和电路技术
公开(公告)号：US20080237721A1
公开(公告)日：2008-10-02
申请号：US11692481
申请日：2007-03-28
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L23/60
CPC分类号： H01L27/0277 , H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：外部电流注入源被提供给多指半导体器件的各个指状物，以跨多个指状物提供相同的触发电压。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

2. 发明授权

US07968908B2 Bidirectional electrostatic discharge protection structure for high voltage applications 有权
标题翻译：双向静电放电保护结构，适用于高压应用
公开(公告)号：US07968908B2
公开(公告)日：2011-06-28
申请号：US12563610
申请日：2009-09-21
申请人： Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
发明人： Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
IPC分类号： H01L29/73
CPC分类号： H01L23/60 , H01L27/0262 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges.
摘要翻译：提供了提供两极性静电事件保护的半导体结构。在第一导电型阱与信号侧第二导电型阱和电 - 接地侧第二导电型阱中的每一个之间的浅沟槽隔离部分的半导体中设置一对pn结基质。第二导电型掺杂区域和第一导电型掺杂区域形成在每个第二导电型阱之上，使得第二导电型阱的一部分阱电阻地分离第二导电型掺杂区域，以及半导体衬底内的第一导电型掺杂区域。每个第二导电类型的掺杂区域被连接到信号节点或电接地。两个npn晶体管中的一个和两个固有地存在于半导体结构中的两个p-n二极管中的一个导通以提供防止涉及任何一种过量电荷的放电事件的保护。

3. 发明申请

US20110068364A1 BIDIRECTIONAL ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS 有权
标题翻译：用于高压应用的双向静电放电保护结构
公开(公告)号：US20110068364A1
公开(公告)日：2011-03-24
申请号：US12563610
申请日：2009-09-21
申请人： Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
发明人： Michel J. Abou-Khalil , Robert Gauthier , Junjun Li
IPC分类号： H01L23/60
CPC分类号： H01L23/60 , H01L27/0262 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges.
摘要翻译：提供了提供两极性静电事件保护的半导体结构。在第一导电型阱与信号侧第二导电型阱和电 - 接地侧第二导电型阱中的每一个之间的浅沟槽隔离部分的半导体中设置一对pn结基质。第二导电型掺杂区域和第一导电型掺杂区域形成在每个第二导电型阱之上，使得第二导电型阱的一部分阱电阻地分离第二导电型掺杂区域和半导体衬底内的第一导电型掺杂区域。每个第二导电类型的掺杂区域被连接到信号节点或电接地。两个npn晶体管中的一个和两个固有地存在于半导体结构中的两个p-n二极管中的一个导通以提供防止涉及任何一种过量电荷的放电事件的保护。

4. 发明申请

US20090108289A1 DESIGN STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE 有权
标题翻译：具有可调触发电压的多功能半导体器件的均匀触发设计结构
公开(公告)号：US20090108289A1
公开(公告)日：2009-04-30
申请号：US11931517
申请日：2007-10-31
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L27/06
CPC分类号： H01L27/0266 , H01L27/0259 , H01L27/0727 , H01L27/0817
摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

5. 发明授权

US07826185B2 Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltage 有权
标题翻译：用于均匀触发具有可调谐触发电压的多光子半导体器件的结构和电路技术
公开(公告)号：US07826185B2
公开(公告)日：2010-11-02
申请号：US11692481
申请日：2007-03-28
申请人： Michel J. Abou-Khalil , Robert Gauthier, Jr. , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier, Jr. , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H02H9/00 , H01C7/12 , H02H1/00 , H02H1/04 , H02H3/22 , H02H9/06
CPC分类号： H01L27/0277 , H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An external current injection source is provided to individual fingers of a multi-finger semiconductor device to provide the same trigger voltage across the multiple fingers. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：外部电流注入源被提供给多指半导体器件的各个指状物，以跨多个指状物提供相同的触发电压。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

6. 发明授权

US07714356B2 Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltage 有权
标题翻译：具有可调触发电压的多光子半导体器件均匀触发的设计结构
公开(公告)号：US07714356B2
公开(公告)日：2010-05-11
申请号：US11931517
申请日：2007-10-31
申请人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert Gauthier , Hongmei Li , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L27/06
CPC分类号： H01L27/0266 , H01L27/0259 , H01L27/0727 , H01L27/0817
摘要： A design structure for a circuit providing the same trigger voltage across the multiple fingers is provided, which comprises a data representing an external current injection source connected to individual fingers of a multi-finger semiconductor device. For example, the external injection current is supplied to the body of a MOSFET or the gate of a thyristor. The magnitude of the supplied current from each external current injection source is adjusted so that each finger has the same trigger voltage. The external current supply circuit may comprise diodes or an RC triggered MOSFET. The components of the external current supply circuit may be tuned to achieve a desired predetermined trigger voltage across all fingers of the multi-finger semiconductor device.
摘要翻译：提供了一种用于跨多个指状物提供相同触发电压的电路的设计结构，其包括表示连接到多指半导体器件的各个指状物的外部电流注入源的数据。例如，外部注入电流被提供给MOSFET的主体或晶闸管的栅极。调整来自每个外部电流注入源的供给电流的大小，使得每个手指具有相同的触发电压。外部电流供应电路可以包括二极管或RC触发MOSFET。可以调谐外部电流供应电路的组件以实现多指半导体器件的所有指状物上期望的预定触发电压。

7. 发明授权

US08669146B2 Semiconductor structures with thinned junctions and methods of manufacture 有权
公开(公告)号：US08669146B2
公开(公告)日：2014-03-11
申请号：US13005560
申请日：2011-01-13
申请人： Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H01L21/336
CPC分类号： H01L29/0688 , H01L27/0266 , H01L29/0615 , H01L29/66772 , H01L29/78621 , H01L29/78696
摘要： A method of forming a semiconductor structure, including forming a channel in a first portion of a semiconductor layer and forming a doped extension region in a second portion of the semiconductor layer abutting the channel on a first side and abutting an insulator material on a bottom side. The first portion of the semiconductor layer is thicker than the second portion of the semiconductor layer.

8. 发明申请

US20120153434A1 METAL-INSULATOR-METAL CAPACITORS WITH HIGH CAPACITANCE DENSITY 有权
标题翻译：具有高电容密度的金属绝缘体 - 金属电容器
公开(公告)号：US20120153434A1
公开(公告)日：2012-06-21
申请号：US12969004
申请日：2010-12-15
申请人： Michel J. Abou-Khalil , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , Anthony K. Stamper
发明人： Michel J. Abou-Khalil , Robert J. Gauthier, JR. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam , Anthony K. Stamper
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/82 , H01L23/5223 , H01L27/0207 , H01L28/90 , H01L2924/0002 , H01L2924/00
摘要： Metal-insulator-metal (MIM) capacitors and methods for fabricating MIM capacitors. The MIM capacitor includes an interlayer dielectric (ILD) layer with apertures each bounded by a plurality of sidewalls and each extending from the top surface of the ILD layer into the first interlayer dielectric layer. A layer stack, which is disposed on the sidewalls of the apertures and the top surface of the ILD layer, includes a bottom conductive electrode, a top conductive electrode, and a capacitor dielectric between the bottom and top conductive electrodes.
摘要翻译：金属绝缘体金属（MIM）电容器和制造MIM电容器的方法。 MIM电容器包括层间绝缘层（ILD）层，其中各孔由多个侧壁限定，并且各自从ILD层的顶表面延伸到第一层间电介质层。布置在孔的侧壁和ILD层的顶表面上的层叠层包括底部导电电极，顶部导电电极和位于底部和顶部导电电极之间的电容器电介质。

9. 发明申请

US20110049683A1 STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES 失效
标题翻译：电脉冲方法的结构，方法和应用
公开(公告)号：US20110049683A1
公开(公告)日：2011-03-03
申请号：US12553523
申请日：2009-09-03
申请人： Michel J. Abou-Khalil , Robert J. GAUTHIER, JR. , Tom C. LEE , Junjun LI , Souvick MITRA , Christopher S. PUTNAM , Robert R. ROBISON
发明人： Michel J. Abou-Khalil , Robert J. GAUTHIER, JR. , Tom C. LEE , Junjun LI , Souvick MITRA , Christopher S. PUTNAM , Robert R. ROBISON
IPC分类号： H01L29/861 , H01L21/265 , H01L21/30
CPC分类号： H01L21/324 , H01L27/0255 , H01L29/8611 , H01L29/866
摘要： Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.
摘要翻译：为纳秒电脉冲退火工艺提供了结构和方法。形成静电放电（ESD）N + / P +结构的方法包括在衬底上形成N +扩散和在衬底上形成P +扩散。 P +扩散与N +扩散电接触。该方法还包括在N +扩散和P +扩散之间形成器件。退火结构或材料的方法包括跨多个纳秒的静电放电（ESD）N + / P +结构施加电脉冲。

10. 发明授权

US07881028B2 E-fuse used to disable a triggering network 失效
标题翻译：用于禁用触发网络的电熔丝
公开(公告)号：US07881028B2
公开(公告)日：2011-02-01
申请号：US12041962
申请日：2008-03-04
申请人： Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
发明人： Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
IPC分类号： H02H9/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A device and/or circuit having an e-fuse is provided to disable a triggering network, and more specifically, an e-fuse is used to disable an electrostatic discharge (ESD) RC triggering network after device installation. The device and/or circuit includes a triggering network electrically coupled to an electrostatic discharge (ESD) protection device. An e-fuse is electrically coupled with the triggering network and configured to render the ESD protection device insensitive to a triggering signal after blowing the e-fuse.
摘要翻译：提供具有电子保险丝的装置和/或电路以禁用触发网络，更具体地，使用电子熔丝来在设备安装之后禁用静电放电（ESD）RC触发网络。该装置和/或电路包括电耦合到静电放电（ESD）保护装置的触发网络。电子熔丝与触发网络电耦合并且被配置为使得ESD保护装置在吹动电熔丝之后对触发信号不敏感。

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