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1. 发明授权

US09440311B2 Methods and apparatus for separating a substrate 有权
标题翻译：用于分离衬底的方法和装置
公开(公告)号：US09440311B2
公开(公告)日：2016-09-13
申请号：US14878973
申请日：2015-10-08
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/46 , H01L21/67 , H01L21/463 , B28D5/00 , H01L31/04 , H01L21/78 , B23K26/00 , B23K26/073 , B23K26/40 , C30B29/06 , C30B33/06 , B23K26/38 , B32B37/28 , B32B38/00
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The substrate slicing process can also involve a mechanical cleaving process after the laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through. One portion of the two substrate chucks are in parallel to each other to center the substrate sidewall. The gap can increase between the second portion of the two substrate chucks after the location for substrate separation, to spread out the resulting two substrates after the slicing and to facilitate the continuous substrate separation process. The present invention is further directed to methods and apparatus of separating a continuous thin layer of materials from side wall of a rotating ingot. It can be accomplished by a laser irradiation on the ingot side wall from a tangential direction for materials ablation. In an alternative method, a high-intensity short-pulse laser irradiates on the ingot side wall from a radial direction and converges under the ingot sidewall surface to form a plane of modified region inside the substrate, and a thin layer of materials is separated from the ingot side wall along the plane of modified region in a subsequent mechanical cleaving step. A film can be deposited/bonded to the ingot side wall prior to the separation of the thin film layers. The resulting thin layer of materials can be pulled away from the ingot by a substrate chuck.
摘要翻译：本发明涉及将薄半导体衬底从侧壁切割成半厚度的两个衬底。基板切片工艺涉及激光照射步骤。衬底切片工艺也可以涉及激光照射步骤之后的机械切割过程。用于衬底切片的装置包括两个相对的衬底卡盘，其间有间隙以使衬底通过。两个基板卡盘的一部分彼此平行以使基板侧壁居中。在基板分离位置之后，两个基板卡盘的第二部分之间的间隙可以增加，以便在切片之后展开所得到的两个基板，并且便于连续的基板分离过程。本发明还涉及从连续铸锭的侧壁分离材料的连续薄层的方法和装置。可以通过从材料切割的切线方向对锭侧壁进行激光照射来实现。在替代方法中，高强度短脉冲激光从径向辐射在晶锭侧壁上并在晶锭侧壁表面下会聚，以在衬底内部形成改质区域的平面，并将薄层材料从在随后的机械切割步骤中沿着改质区域的平面的锭侧壁。在分离薄膜层之前，可以将膜沉积/粘合到锭侧壁。所得到的薄层材料可以通过基板卡盘从铸锭中拉出。

2. 发明申请

US20150170967A1 Methods for Substrate and Device Fabrications 审中-公开
标题翻译：基板和器件制造方法
公开(公告)号：US20150170967A1
公开(公告)日：2015-06-18
申请号：US14104601
申请日：2013-12-12
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/78 , H01L21/461
CPC分类号： H01L21/7806 , H01L21/268 , H01L21/67092
摘要： The present invention relates to methods in fabrication of electronics and optoelectronics devices. Devices are first fabricated on the substrate, followed by a substrate thinning process with a laser irradiation on the substrate sidewall.This invention is further directed to methods of separating a substrate into two pieces with a laser irradiation on substrate sidewall. In one embodiment, the method involves a laser anneal of the materials, accompanied by forces applied from front and back surfaces to separate the substrate. In yet another embodiment, the method consists of both laser ablation and laser anneal process steps.
摘要翻译：本发明涉及电子和光电子器件的制造方法。首先在衬底上制造器件，随后在衬底侧壁上通过激光照射进行衬底稀疏处理。本发明还涉及通过激光照射在衬底侧壁上将衬底分离成两片的方法。在一个实施例中，该方法涉及材料的激光退火，伴随着从前表面和后表面施加的力以分离衬底。在另一个实施例中，该方法包括激光烧蚀和激光退火工艺步骤。

3. 发明申请

US20140053382A1 Methods and apparatus for separating a substrate 审中-公开
标题翻译：用于分离衬底的方法和装置
公开(公告)号：US20140053382A1
公开(公告)日：2014-02-27
申请号：US13694525
申请日：2012-12-10
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/46 , H01L21/463 , B28D5/00 , H01L21/67
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through.The present invention is further directed to methods and apparatus of separating a continuous thin layer of materials from side wall of a rotating ingot. It can be accomplished by a laser irradiation on the ingot side wall from a tangential direction. A film can be deposited on/bonded to the ingot side wall prior to the separation of the thin film layers. The resulting thin layer of materials can be pulled away from the ingot by a substrate chuck.
摘要翻译：本发明涉及将薄半导体衬底从侧壁切割成半厚度的两个衬底。基板切片工艺涉及激光照射步骤。用于衬底切片的装置包括两个相对的衬底卡盘，其间有间隙以使衬底通过。本发明还涉及从连续铸锭的侧壁分离材料的连续薄层的方法和装置。可以通过在切向方向上在锭侧壁上进行激光照射来实现。在分离薄膜层之前，可以将膜沉积在/结合到锭侧壁上。所得到的薄层材料可以通过基板卡盘从铸锭中拉出。

4. 发明申请

US20170353145A1 Methods for Sunlight Collection and Solar Energy Generation 审中-公开
公开(公告)号：US20170353145A1
公开(公告)日：2017-12-07
申请号：US15175802
申请日：2016-06-07
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H02S20/32 , H02S30/20 , H01L31/054
CPC分类号： H02S20/32 , F24S23/77 , F24S30/00 , F24S30/425 , F24S30/45 , F24S2020/16 , H01L31/0543 , H02S40/22 , Y02E10/52
摘要： This invention relates to photovoltaic (PV) systems with solar trackers. Retractable auxiliary panels are positioned at opposite sides of a solar panel along its tilt direction. The auxiliary panels do not obstruct the direct solar irradiation onto the solar panels, but rather redirect additional solar irradiation to the solar panels, including both direct beam and diffuse sunlight. While solar panels tilt to track the sun, configurations of the auxiliary panels can be adjusted to avoid shading on adjacent solar panels. Compared to conventional PV systems on solar trackers, the proposed PV system can significantly improve overall sunlight collection and PV system output throughout a day.

5. 发明申请

US20160336897A1 Apparatus for Sunlight Collection and Solar Energy Generation 审中-公开
标题翻译：阳光收集和太阳能发电装置
公开(公告)号：US20160336897A1
公开(公告)日：2016-11-17
申请号：US15175737
申请日：2016-06-07
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H02S20/32 , H01L31/054
CPC分类号： H02S40/22 , H02S20/30 , Y02E10/52
摘要： This invention relates to photovoltaic (PV) systems with solar trackers. Retractable auxiliary panels are positioned at opposite sides of a solar panel along its tilt direction. The auxiliary panels do not obstruct the direct solar irradiation onto the solar panels, but rather redirect additional solar irradiation to the solar panels, including both direct beam and diffuse sunlight. While solar panels tilt to track the sun, configurations of the auxiliary panels can be adjusted to avoid shading on adjacent solar panels. Compared to conventional PV systems on solar trackers, the proposed PV system can significantly improve overall sunlight collection and PV system output throughout a day.
摘要翻译：本发明涉及具有太阳能跟踪器的光伏（PV）系统。可伸缩辅助面板沿其倾斜方向定位在太阳能电池板的相对侧。辅助面板不会阻碍直接太阳能照射到太阳能电池板上，而是将额外的太阳辐射引向太阳能电池板，包括直射光束和漫射阳光。虽然太阳能电池板倾斜跟踪太阳，但是可以调整辅助面板的配置，以避免相邻的太阳能电池板上的阴影。与太阳能跟踪器的传统光伏系统相比，所提出的光伏系统可以在一天内显着提高整体的阳光收集和光伏系统的输出。

6. 发明申请

US20160059356A1 Methods and Apparatus for Separating a Substrate 审中-公开
标题翻译：分离底物的方法和装置
公开(公告)号：US20160059356A1
公开(公告)日：2016-03-03
申请号：US14878973
申请日：2015-10-08
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： B23K26/364 , B32B37/28 , B32B38/00 , B23K26/402 , B23K26/38
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The substrate slicing process can also involve a mechanical cleaving process after the laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through. One portion of the two substrate chucks are in parallel to each other to center the substrate sidewall. The gap can increase between the second portion of the two substrate chucks after the location for substrate separation, to spread out the resulting two substrates after the slicing and to facilitate the continuous substrate separation process. The present invention is further directed to methods and apparatus of separating a continuous thin layer of materials from side wall of a rotating ingot. It can be accomplished by a laser irradiation on the ingot side wall from a tangential direction for materials ablation. In an alternative method, a high-intensity short-pulse laser irradiates on the ingot side wall from a radial direction and converges under the ingot sidewall surface to form a plane of modified region inside the substrate, and a thin layer of materials is separated from the ingot side wall along the plane of modified region in a subsequent mechanical cleaving step. A film can be deposited/bonded to the ingot side wall prior to the separation of the thin film layers. The resulting thin layer of materials can be pulled away from the ingot by a substrate chuck.
摘要翻译：本发明涉及将薄半导体衬底从侧壁切割成半厚度的两个衬底。基板切片工艺涉及激光照射步骤。衬底切片工艺也可以涉及激光照射步骤之后的机械切割过程。用于衬底切片的装置包括两个相对的衬底卡盘，其间有间隙以使衬底通过。两个基板卡盘的一部分彼此平行以使基板侧壁居中。在基板分离位置之后，两个基板卡盘的第二部分之间的间隙可以增加，以便在切片之后展开所得到的两个基板，并且便于连续的基板分离过程。本发明还涉及从连续铸锭的侧壁分离材料的连续薄层的方法和装置。可以通过从材料切割的切线方向对锭侧壁进行激光照射来实现。在替代方法中，高强度短脉冲激光从径向辐射在晶锭侧壁上并在晶锭侧壁表面下会聚，以在衬底内部形成改质区域的平面，并将薄层材料从在随后的机械切割步骤中沿着改质区域的平面的锭侧壁。在分离薄膜层之前，可以将膜沉积/粘合到锭侧壁。所得到的薄层材料可以通过基板卡盘从铸锭中拉出。

7. 发明申请

US20140057413A1 Methods for fabricating devices on semiconductor substrates 审中-公开
标题翻译：在半导体衬底上制造器件的方法
公开(公告)号：US20140057413A1
公开(公告)日：2014-02-27
申请号：US13694526
申请日：2012-12-10
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/78
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： The present invention relates to insertion of a substrate separation step in fabrication of electronics, optoelectronics and microelectromechanical devices (MEMS), particularly double-sided devices which functionalities require designs and fabrication processes at both sides of substrates. In the method, both sides of a semiconductor substrate are processed, prior to slicing of the substrate from the sidewall into two pieces, and the device fabrication continues on the new surfaces of the two resulting substrates after the slicing.The present invention is applicable to various schemes in crystalline silicon solar cell fabrication. Compared with the baseline manufacturing flow, the method can produce two solar cells from one starting substrate, with a potentially significant reduction in production cost per final solar cell.
摘要翻译：本发明涉及在电子学，光电子学和微机电器件（MEMS）的制造中的衬底分离步骤的插入，特别是功能要求在衬底两侧进行设计和制造工艺的双面器件。在该方法中，在将衬底从侧壁切片成两片之前，半导体衬底的两侧被处理，并且器件制造在切片之后在两个所得衬底的新表面上继续进行。本发明可应用于晶体硅太阳能电池制造中的各种方案。与基准制造流程相比，该方法可以从一个起始衬底生产两个太阳能电池，每个最终太阳能电池的生产成本可能显着降低。

8. 发明授权

US09196503B2 Methods for fabricating devices on semiconductor substrates 有权
标题翻译：在半导体衬底上制造器件的方法
公开(公告)号：US09196503B2
公开(公告)日：2015-11-24
申请号：US13694526
申请日：2012-12-10
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/00 , H01L21/46 , H01L21/67 , H01L21/463 , B28D5/00 , H01L21/78 , B23K26/00 , B23K26/073 , B23K26/36 , B23K26/40
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： The present invention relates to insertion of a substrate separation step in fabrication of electronics, optoelectronics and microelectromechanical devices (MEMS), particularly double-sided devices which functionalities require designs and fabrication processes at both sides of substrates. In the method, both sides of a semiconductor substrate are processed, prior to slicing of the substrate from the sidewall into two pieces, and the device fabrication continues on the new surfaces of the two resulting substrates after the slicing. The present invention is applicable to various schemes in crystalline silicon solar cell fabrication. Compared with the baseline manufacturing flow, the method can produce two solar cells from one starting substrate, with a potentially significant reduction in production cost per final solar cell.
摘要翻译：本发明涉及在电子学，光电子学和微机电器件（MEMS）的制造中的衬底分离步骤的插入，特别是功能要求在衬底两侧进行设计和制造工艺的双面器件。在该方法中，在将衬底从侧壁切片成两片之前，半导体衬底的两侧被处理，并且器件制造在切片之后在两个所得衬底的新表面上继续进行。本发明可应用于晶体硅太阳能电池制造中的各种方案。与基准制造流程相比，该方法可以从一个起始衬底生产两个太阳能电池，每个最终太阳能电池的生产成本可能显着降低。

9. 发明授权

US09190294B2 Methods and apparatus for separating a substrate 有权
标题翻译：用于分离衬底的方法和装置
公开(公告)号：US09190294B2
公开(公告)日：2015-11-17
申请号：US13694525
申请日：2012-12-10
申请人： Michael Xiaoxuan Yang
发明人： Michael Xiaoxuan Yang
IPC分类号： H01L21/78 , H01L21/46 , H01L21/67 , H01L21/463 , B28D5/00 , B23K26/00 , B23K26/073 , B23K26/36 , B23K26/40
CPC分类号： B23K26/364 , B23K26/0736 , B23K26/359 , B23K26/38 , B23K26/40 , B23K26/402 , B23K2103/50 , B23K2103/56 , B28D5/00 , B32B37/28 , B32B38/0004 , B32B38/0008 , C30B29/06 , C30B33/06 , H01L21/46 , H01L21/463 , H01L21/67 , H01L21/78 , H01L31/04 , Y10T29/41
摘要： This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through.The present invention is further directed to methods and apparatus of separating a continuous thin layer of materials from side wall of a rotating ingot. It can be accomplished by a laser irradiation on the ingot side wall from a tangential direction. A film can be deposited on/bonded to the ingot side wall prior to the separation of the thin film layers. The resulting thin layer of materials can be pulled away from the ingot by a substrate chuck.
摘要翻译：本发明涉及将薄半导体衬底从侧壁切割成半厚度的两个衬底。基板切片工艺涉及激光照射步骤。用于衬底切片的装置包括两个相对的衬底卡盘，其间有间隙以使衬底通过。本发明还涉及从连续铸锭的侧壁分离材料的连续薄层的方法和装置。可以通过在切向方向上在锭侧壁上进行激光照射来实现。在分离薄膜层之前，可以将膜沉积在/结合到锭侧壁上。所得到的薄层材料可以通过基板卡盘从铸锭中拉出。

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