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1. 发明授权

US5212108A Fabrication of stabilized polysilicon resistors for SEU control 失效
标题翻译：用于SEU控制的稳定多晶硅电阻器的制造
公开(公告)号：US5212108A
公开(公告)日：1993-05-18
申请号：US807307
申请日：1991-12-13
申请人： Michael S. Liu , Gordon A. Shaw , Jerry Yue
发明人： Michael S. Liu , Gordon A. Shaw , Jerry Yue
IPC分类号： H01L21/02 , H01L21/3215 , H01L27/11
CPC分类号： H01L28/20 , H01L21/32155 , H01L27/1112
摘要： A method for fabricating polysilicon resistors of intermediate high value for use as cross-coupling or =ingle event upset (SEU) resistors in memory cells. A thin polysilicon film is implanted with arsenic ions to produce a predetermined resistivity. The thin film is then implanted with fluorine ions to stabilize the grain boundaries and thereby the barrier height. Reducing the variation in barrier height from run to run of wafers allows the fabrication of reproducible SEU resistors.
摘要翻译：一种用于制造中间值高的多晶硅电阻器的方法，用作存储器单元中的交叉耦合或单个事件镦粗（SEU）电阻器。用砷离子注入薄的多晶硅膜以产生预定的电阻率。然后用氟离子注入薄膜以稳定晶界，从而稳定势垒高度。降低栅极高度从运行到晶圆运行的变化允许制造可再现的SEU电阻器。

2. 发明申请

US20070232014A1 Method of fabricating a planar MIM capacitor 审中-公开
标题翻译：制造平面MIM电容器的方法
公开(公告)号：US20070232014A1
公开(公告)日：2007-10-04
申请号：US11396844
申请日：2006-04-03
申请人： Bradley Larsen , Jerry Yue
发明人： Bradley Larsen , Jerry Yue
IPC分类号： H01L21/20
CPC分类号： H01L28/40
摘要： A method of fabricating a Metal-Insulator-Metal (MIM) capacitor is presented. The method includes depositing a bottom plate of the MIM capacitor on a passivating dielectric layer which may be a pre-metal or post metal dielectric layer. A capacitor dielectric of the MIM capacitor is subsequently deposited on top of the bottom plate. The capacitor dielectric and the bottom plate both conform to the profile of the passivating dielectric layer. In addition, because the bottom plate is located on a dielectric, which is thermally stable and does not morph or change significantly with successive thermal processing, the capacitor dielectric does not have to be designed to compensate for topography changes due to such thermal processing.
摘要翻译：提出了一种制造金属 - 绝缘体 - 金属（MIM）电容器的方法。该方法包括将MIM电容器的底板沉积在钝化介质层上，钝化介电层可以是金属前金属或后金属介电层。 MIM电容器的电容电介质随后沉积在底板的顶部上。电容器电介质和底板都符合钝化介电层的轮廓。另外，由于底板位于电介质上，其是热稳定的并且不会随着连续热处理而变形或显着变化，所以电容器电介质不必被设计成补偿由于这种热处理而引起的形貌变化。

3. 发明授权

US5061644A Method for fabricating self-aligned semiconductor devices 失效
标题翻译：制造自对准半导体器件的方法
公开(公告)号：US5061644A
公开(公告)日：1991-10-29
申请号：US587175
申请日：1990-09-20
申请人： Jerry Yue , Michael S. T. Liu
发明人： Jerry Yue , Michael S. T. Liu
IPC分类号： H01L21/285
CPC分类号： H01L21/28525 , Y10S148/027 , Y10S148/029 , Y10S148/043 , Y10S148/124
摘要： A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.
摘要翻译：一种对位于半导体衬底上的晶体管元件形成自对准接触的方法，包括在覆盖半导体衬底的掩模层中形成开口的晶体管元件，并且使用外延横向过度生长形成自对准接触，该外延过生长开始于所述掩蔽层在所述半导体衬底的上表面处开口并且在所述掩模层表面上垂直并横向延伸。

4. 发明申请

US20070274655A1 LOW-LOSS OPTICAL DEVICE STRUCTURE 审中-公开
标题翻译：低损耗光学器件结构
公开(公告)号：US20070274655A1
公开(公告)日：2007-11-29
申请号：US11557185
申请日：2006-11-07
申请人： Thomas Keyser , Grenville Hughes , Jerry Yue
发明人： Thomas Keyser , Grenville Hughes , Jerry Yue
IPC分类号： G02B6/10
CPC分类号： G02B6/12 , G02B6/136 , G02B6/34 , G02B6/4204 , G02B2006/121
摘要： A method of fabrication and a structure for a low-loss optical device. The optical device structure includes a waveguide that is formed within a device layer of an SOI substrate. A cladding region is formed beneath the waveguide and a BOX layer of the SOI substrate. The cladding region may comprise an air cavity or a cavity that is filled or at least partially filled with a dielectric material. Because the cladding region is formed in the bottom side, it supplements the BOX layer cladding. Consequently, a thinner BOX layer may be used for both electronic and optical devices, which facilitates optoelectronic IC processing and design.
摘要翻译：一种低损耗光学器件的制造方法和结构。光学器件结构包括形成在SOI衬底的器件层内的波导。在波导的下方形成包层区域，形成SOI衬底的BOX层。包层区域可以包括填充或至少部分地填充有电介质材料的空气腔或空腔。因为包层区域形成在底部，所以它补充了BOX层包层。因此，较薄的BOX层可用于电子和光学器件，这便于光电子IC处理和设计。

5. 发明授权

US5496759A Highly producible magnetoresistive RAM process 失效
标题翻译：高度可生产的磁阻RAM工艺
公开(公告)号：US5496759A
公开(公告)日：1996-03-05
申请号：US365852
申请日：1994-12-29
申请人： Jerry Yue , Allan T. Hurst , Tangshiun Yeh , Huang-Joung Chen
发明人： Jerry Yue , Allan T. Hurst , Tangshiun Yeh , Huang-Joung Chen
IPC分类号： H01L27/16 , H01L43/12 , H01L21/8239
CPC分类号： H01L43/12
摘要： A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.
摘要翻译：用于形成磁阻位的工艺和与下面的部件的互连形成在覆盖磁性材料的非晶电介质中形成图案。去除部分磁性材料以形成具有通过离子铣削的平滑钻头边缘轮廓的钻头。该位位于底层组件的一端。沉积第二非晶介质层并在位端蚀刻以在底层部件上形成通孔。常规的第一金属用于形成互连。

6. 发明授权

US5146304A Self-aligned semiconductor device 失效
标题翻译：自对准半导体器件
公开(公告)号：US5146304A
公开(公告)日：1992-09-08
申请号：US718625
申请日：1991-06-21
申请人： Jerry Yue , Michael S. T. Liu
发明人： Jerry Yue , Michael S. T. Liu
IPC分类号： H01L21/285
CPC分类号： H01L21/28525
摘要： A method of forming a self-aligned contact to a transistor component located on a semiconductor substrate comprising forming a transistor component opening in a masking layer overlying a semiconductor substrate and using epitaxial lateral overgrowth to form a self-aligned contact, the epitaxial overgrowth beginning in the masking layer opening at an upper surface of the semiconductor substrate and extending normal to and laterally over the masking layer surface.
摘要翻译：一种对位于半导体衬底上的晶体管元件形成自对准接触的方法，包括在覆盖半导体衬底的掩模层中形成开口的晶体管元件，并且使用外延横向过度生长形成自对准接触，该外延过生长开始于所述掩蔽层在所述半导体衬底的上表面处开口并且在所述掩模层表面上垂直并横向延伸。

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