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    • 1. 发明申请
    • Circulator chain memory command and address bus topology
    • 循环链存储器命令和地址总线拓扑
    • US20050055499A1
    • 2005-03-10
    • US10658883
    • 2003-09-09
    • Michael LeddigeJames McCall
    • Michael LeddigeJames McCall
    • G11C5/00G11C5/06G11C8/12G06F12/00
    • G11C8/12G11C5/063G11C7/1066
    • Embodiments of the invention provide a memory command and address (CA) bus architecture that can accommodate higher CA data output frequencies with reduced signal degradation. For one embodiment of the invention the CA signal is routed to a first of two dual in-line memory modules (DIMMs) of a two-DIMM/channel memory bus design. The CA signal is then divided into components, with each CA signal component routed serially through a group of dynamic random access memory (DRAM) chips on the first DIMM. The CA signal components are then recombined and routed to the second DIMM. The recombined CA signal is then divided again into components, with each CA signal component routed serially through a group of dynamic random access memory (DRAM) chips on the first DIMM and the CA signal components are then recombined. In one embodiment, after routing through each DRAM, the CA signal is terminated on the DIMM.
    • 本发明的实施例提供了一种存储器命令和地址(CA)总线架构,其可以适应具有降低的信号劣化的较高CA数据输出频率。 对于本发明的一个实施例,CA信号被路由到两DIMM /通道存储器总线设计的两个双列直插存储器模块(DIMM)中的第一个。 然后将CA信号分成组件,每个CA信号分量通过一组第一DIMM上的动态随机存取存储器(DRAM)芯片串行路由。 然后将CA信号组件重新组合并路由到第二个DIMM。 然后将重新组合的CA信号再划分成组件,每个CA信号分量被顺序地路由在第一DIMM上的一组动态随机存取存储器(DRAM)芯片,然后CA信号分量被重新组合。 在一个实施例中,在路由每个DRAM之后,CA信号在DIMM上终止。
    • 2. 发明申请
    • Split T-chain memory command and address bus topology
    • 分割T链存储器命令和地址总线拓扑
    • US20050033905A1
    • 2005-02-10
    • US10638069
    • 2003-08-08
    • Michael LeddigeJames McCall
    • Michael LeddigeJames McCall
    • G06F12/00G06F13/16G06F13/42G11C5/00
    • G06F13/4239G11C5/04
    • Embodiments of the invention provide a memory command and address (CA) bus architecture that can accommodate higher CA data output frequencies with reduced signal degradation. For one embodiment of the invention the CA is divided on the motherboard and a CA signal component routed to each of two dual in-line memory modules (DIMMs) of a two-DIMM/channel memory bus design. The CA signal component on each DIMM is then routed sequentially through each dynamic random access memory (DRAM) chip on the respective DIMM. In one embodiment, after routing through each DRAM, the CA signal is terminated on the DIMM. In an alternative embodiment, the CA signal is terminated on the die at the last DRAM of each respective DIMM.
    • 本发明的实施例提供了一种存储器命令和地址(CA)总线架构,其可以适应具有降低的信号劣化的较高CA数据输出频率。 对于本发明的一个实施例,CA在主板上被划分,并且CA信号分量被路由到两个DIMM /通道存储器总线设计的两个双列直插式存储器模块(DIMM)中的每一个。 然后,每个DIMM上的CA信号分量依次通过相应DIMM上的每个动态随机存取存储器(DRAM)芯片。 在一个实施例中,在路由每个DRAM之后,CA信号在DIMM上终止。 在替代实施例中,CA信号在每个相应的DIMM的最后一个DRAM处终止在管芯上。