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1. 发明申请

US20110122899A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20110122899A1
公开(公告)日：2011-05-26
申请号：US12991590
申请日：2009-06-17
申请人： Michael Kühnelt , Peter Brick , Stephan Lutgen
发明人： Michael Kühnelt , Peter Brick , Stephan Lutgen
IPC分类号： H01S3/109
CPC分类号： H01S5/14 , H01S3/109 , H01S5/1039 , H01S5/141 , H01S5/142 , H01S5/183
摘要： A semiconductor laser includes a semiconductor laser element that emits electromagnetic radiation with at least one fundamental wavelength when in operation, an end mirror, a deflecting mirror reflective as a function of polarization located between the semiconductor laser element and the end mirror, and at least one optically nonlinear crystal configured for type II frequency conversion of the fundamental wavelength and which satisfies a λ/2 condition for the fundamental wavelength.
摘要翻译：半导体激光器包括半导体激光元件，其在运行时发射具有至少一个基本波长的电磁辐射，端镜，作为偏振的反射镜的反射镜位于半导体激光元件和端镜之间，以及至少一个光学非线性晶体被配置为用于基波长的II型频率转换并且满足基波长的λ/ 2条件。

2. 发明授权

US08351479B2 Optoelectronic semiconductor element 有权
标题翻译：光电半导体元件
公开(公告)号：US08351479B2
公开(公告)日：2013-01-08
申请号：US12293057
申请日：2007-03-15
申请人： Stephan Lutgen , Peter Brick , Tony Albrecht
发明人： Stephan Lutgen , Peter Brick , Tony Albrecht
IPC分类号： H01S5/183 , H01S5/026 , H01S5/04
CPC分类号： H01S5/18388 , H01S3/108 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/227 , H01S5/4025 , H01S5/4031
摘要： An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.
摘要翻译：光电子半导体部件具有包括发射垂直发射极区域（2）的表面的半导体本体（1），所述表面发射垂直发射极区域包括垂直发射极层（3），设置用于光学泵浦垂直发射极层（3）的至少一个泵浦源（4）和在垂直发射极层中产生的电磁辐射（31）离开半导体本体（1）的辐射通道区域（26），其中泵浦源（4）和垂直发射极层（3）距离一个距离另一个在垂直方向。

3. 发明申请

US20100014549A1 Surface Emitting Semiconductor Body with Vertical Emission Direction and Stabilized Emission Wavelength 有权
标题翻译：具有垂直发射方向和稳定发射波长的表面发射半导体体
公开(公告)号：US20100014549A1
公开(公告)日：2010-01-21
申请号：US12307120
申请日：2007-06-28
申请人： Peter Brick , Wolfgang Diehl , Stephan Lutgen
发明人： Peter Brick , Wolfgang Diehl , Stephan Lutgen
IPC分类号： H01S5/183
CPC分类号： H01S5/14 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/068 , H01S5/18358 , H01S5/18383
摘要： A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.
摘要翻译：规定具有垂直发射方向的表面发射半导体本体，其用于与谐振器一起工作，并且包括具有有源区的半导体层序列，其中半导体主体以波长稳定方式体现，使得峰相对于在有源区域中产生的辐射的输出功率的变化，在半导体主体的预定操作范围内在有源区域中产生的辐射的波长稳定。

4. 发明授权

US07408972B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US07408972B2
公开(公告)日：2008-08-05
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/091 , H01S3/08
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

5. 发明授权

US08208512B2 Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength 有权
标题翻译：具有垂直发射方向和稳定的发射波长的表面发射半导体体
公开(公告)号：US08208512B2
公开(公告)日：2012-06-26
申请号：US12307120
申请日：2007-06-28
申请人： Peter Brick , Wolfgang Diehl , Stephan Lutgen
发明人： Peter Brick , Wolfgang Diehl , Stephan Lutgen
IPC分类号： H01S3/13 , H01S5/00
CPC分类号： H01S5/14 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/068 , H01S5/18358 , H01S5/18383
摘要： A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.
摘要翻译：规定具有垂直发射方向的表面发射半导体本体，其用于与谐振器一起工作，并且包括具有有源区的半导体层序列，其中半导体主体以波长稳定方式体现，使得峰相对于在有源区域中产生的辐射的输出功率的变化，在半导体主体的预定操作范围内在有源区域中产生的辐射的波长稳定。

6. 发明授权

US07522646B2 Vertically emitting optically pumped diode laser with external resonator 有权
标题翻译：用外部谐振器垂直发射光泵浦二极管激光器
公开(公告)号：US07522646B2
公开(公告)日：2009-04-21
申请号：US10745378
申请日：2003-12-22
申请人： Peter Brick , Stephan Lutgen , Norbert Linder
发明人： Peter Brick , Stephan Lutgen , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S5/028 , H01S5/041 , H01S5/141
摘要： A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for irradiating into the active zone at an incidence angle αp pumping radiation (10) of wavelength λp. The wavelength λp and the incidence angle αp of the pumping radiation are selected in such a way that the absorption of the pumping radiation takes place substantially inside the quantum wells. This avoids the losses during the capture of charge carriers from the barrier layers into the quantum wells that occur in the case of optically pumped semiconductor lasers where the pumping radiation is absorbed in the barrier layers. Also specified are advantageous refinements of the semiconductor body and combinations for incidence angle and wavelength of the pumping radiation source that permit a particularly effective optical pumping process of the quantum wells.
摘要翻译：一种具有外部谐振器的垂直发射半导体激光器，其中量子阱结构（4）位于其中的量子阱（6）和位于其间的阻挡层（5）的有源区的半导体本体（1）和至少一个泵浦辐射源（9），用于以波长兰波特的入射角alphap泵浦辐射（10）照射到有源区域中。泵浦辐射的波长羔羊和入射角alphap以这样的方式选择，使得泵浦辐射的吸收基本上在量子阱内部发生。这避免了在从泵浦辐射被吸收在阻挡层中的光泵浦半导体激光器的情况下，从阻挡层捕获到电荷载流子到量子阱期间的损耗。还规定了半导体主体的有利改进以及允许量子阱的特别有效的光泵浦过程的泵浦辐射源的入射角和波长的组合。

7. 发明授权

US07570682B2 VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter 有权
标题翻译： VCSEL以单片光学方式泵送并且包括横向施加的边缘发射器
公开(公告)号：US07570682B2
公开(公告)日：2009-08-04
申请号：US10579528
申请日：2004-11-09
申请人： Tony Albrecht , Peter Brick , Stephan Lutgen
发明人： Tony Albrecht , Peter Brick , Stephan Lutgen
IPC分类号： H01S5/00 , H01S3/091
CPC分类号： H01S5/041 , H01S5/026 , H01S5/0425 , H01S5/14 , H01S5/183 , H01S5/209 , H01S5/4031 , H01S5/4056
摘要： A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.
摘要翻译：一种半导体激光器件，包括具有有源辐射发射垂直发射极层（3）的光泵浦表面发射垂直发射极区（2），并且具有至少一个单片集成泵浦辐射源（5），用于光学泵浦垂直发射极区（2），其具有主动辐射发射泵浦层（6）。泵层（6）在垂直方向上跟随垂直发射极层（3），并且在垂直发射极层（3）和泵浦层（6）之间提供导电层（13）。此外，在半导体激光器件的比导电层（13）更靠近泵浦层（6）的一侧上施加触点（9）。可以在该触点（9）和导电层（13）之间施加电场，以通过电荷载体注入产生泵浦辐射（7）。

8. 发明申请

US20070201531A1 OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：光学泵浦半导体激光器件
公开(公告)号：US20070201531A1
公开(公告)日：2007-08-30
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/093 , H01S3/081
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

9. 发明申请

US20070160102A1 Vertically emitting, optically pumped semiconductor laser comprising an external resonator 审中-公开
标题翻译：包括外部谐振器的垂直发射的光泵浦半导体激光器
公开(公告)号：US20070160102A1
公开(公告)日：2007-07-12
申请号：US11636949
申请日：2006-12-11
申请人： Peter Brick , Stephan Lutgen
发明人： Peter Brick , Stephan Lutgen
IPC分类号： H01S5/00
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/024 , H01S5/14 , H01S5/18383 , H01S5/3415 , H01S5/34306 , H01S5/34313 , H01S5/34373
摘要： A vertically emitting semiconductor laser comprising an external resonator (7), a semiconductor body (1), and at least one pump radiation source (9). The semiconductor body (1) has a quantum layer structure (2) as an active zone comprising quantum layers (3) and barrier layers (4) lying in between. The semiconductor body (1) furthermore has a Bragg reflector (5) on one side of the quantum layer structure (2). The Bragg reflector (5) comprises layers which are arranged aperiodically with respect to one another in such a way that an absorption of the pump radiation (10) is essentially effected within the quantum layer structure (2).
摘要翻译：一种垂直发射半导体激光器，包括外部谐振器（7），半导体本体（1）和至少一个泵浦辐射源（9）。半导体本体（1）具有作为活性区的量子层结构（2），该活性区包括位于其间的量子层（3）和阻挡层（4）。半导体本体（1）还在量子层结构（2）的一侧上具有布拉格反射器（5）。布拉格反射器（5）包括相对于彼此非周期地布置的层，使得泵浦辐射（10）的吸收基本上在量子层结构（2）内实现。

10. 发明申请

US20090304039A1 OPTOELECTRONIC SEMICONDUCTOR ELEMENT 有权
标题翻译：光电子半导体元件
公开(公告)号：US20090304039A1
公开(公告)日：2009-12-10
申请号：US12293057
申请日：2007-03-15
申请人： Stephan Lutgen , Peter Brick , Tony Albrecht
发明人： Stephan Lutgen , Peter Brick , Tony Albrecht
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/18388 , H01S3/108 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/227 , H01S5/4025 , H01S5/4031
摘要： An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.
摘要翻译：光电子半导体部件具有包括发射垂直发射极区域（2）的表面的半导体本体（1），所述表面发射垂直发射极区域包括垂直发射极层（3），设置用于光学泵浦垂直发射极层（3）的至少一个泵浦源（4）和在垂直发射极层中产生的电磁辐射（31）离开半导体本体（1）的辐射通道区域（26），其中泵浦源（4）和垂直发射极层（3）距离一个距离另一个在垂直方向。

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