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1. 发明授权

US06627466B1 Method and apparatus for detecting backside contamination during fabrication of a semiconductor wafer 失效
标题翻译：用于在制造半导体晶片期间检测背面污染的方法和装置
公开(公告)号：US06627466B1
公开(公告)日：2003-09-30
申请号：US10138742
申请日：2002-05-03
申请人： Michael J. Berman , George E. Bailey , Rennie G. Barber
发明人： Michael J. Berman , George E. Bailey , Rennie G. Barber
IPC分类号： H01L2166
CPC分类号： H01L21/67259
摘要： A method of detecting contamination on a backside of a semiconductor wafer includes the steps of positioning the backside of the wafer in contact with a detection surface of a contaminant sensor, and detecting deformation of the detection surface of the contaminant sensor. The contaminant sensor may be incorporated into a fabrication device such as a wafer handling device, or can be utilized in the construction of a stand-alone device. An apparatus for detecting contamination on the backside of a semiconductor wafer is also disclosed.
摘要翻译：检测半导体晶片背面的污染物的方法包括以下步骤：将晶片的背面与污染物传感器的检测表面接触，并检测污染物传感器的检测表面的变形。污染物传感器可以结合到诸如晶片处理装置的制造装置中，或者可以用于独立装置的构造。还公开了一种用于检测半导体晶片背面污染的装置。

2. 发明授权

US07298458B2 Optical error minimization in a semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置中的光学误差最小化
公开(公告)号：US07298458B2
公开(公告)日：2007-11-20
申请号：US11473627
申请日：2006-06-22
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： G03B27/62 , G03B27/68
CPC分类号： G03F1/64 , G03F1/62 , G03F7/70308 , G03F7/70425 , G03F7/70783 , G03F7/70983
摘要： Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.
摘要翻译：提供了用于克服半导体制造装置中的掩模版和其他硬件使用发生的光学误差的系统和方法。系统和方法将光学误差最小化，例如由于在掩模版或掩模上引起的重力下垂引起的误差，用于将图案投影到晶片上。减少的误差允许使用更大的掩模和掩模 - 同时保持光学精度; 并改善光预算管理。

3. 发明授权

US06885436B1 Optical error minimization in a semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置中的光学误差最小化
公开(公告)号：US06885436B1
公开(公告)日：2005-04-26
申请号：US10243562
申请日：2002-09-13
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： G03F1/14 , G03F7/20 , G03B27/54 , G03B27/62 , G03B27/68
CPC分类号： G03F1/64 , G03F1/62 , G03F7/70308 , G03F7/70425 , G03F7/70783 , G03F7/70983
摘要： Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.
摘要翻译：提供了用于克服半导体制造装置中的掩模版和其他硬件使用发生的光学误差的系统和方法。系统和方法将光学误差最小化，例如由于在掩模版或掩模上引起的重力下垂引起的误差，用于将图案投影到晶片上。减少的误差允许使用更大的掩模和掩模 - 同时保持光学精度; 并改善光预算管理。

4. 发明授权

US06764749B2 Method to improve the resolution of a photolithography system by use of a coupling layer between the photo resist and the ARC 有权
标题翻译：通过使用光致抗蚀剂和ARC之间的耦合层来提高光刻系统的分辨率的方法
公开(公告)号：US06764749B2
公开(公告)日：2004-07-20
申请号：US10207607
申请日：2002-07-29
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： B32B700
CPC分类号： G03F7/091 , G03F7/11 , Y10S428/913 , Y10T428/24942 , Y10T428/31504
摘要： A method to improve the resolution of a photolithography system by using one or more coupling layers between a photo resist and an anti-reflective coating. The coupling layer(s) compensate for a mis-match in indexes of reflection between the photo resist and anti-reflective coating and minimize the amount of energy which is reflected back into the photo resist, thereby improving the quality of the resulting image which is formed on the photo resist during the process.
摘要翻译：通过使用光抗蚀剂和抗反射涂层之间的一个或多个耦合层来提高光刻系统的分辨率的方法。耦合层补偿光致抗蚀剂和抗反射涂层之间的反射指数中的错配，并将反射回光致抗蚀剂的能量的量最小化，从而提高所得图像的质量在该过程中形成在光致抗蚀剂上。

5. 发明授权

US07098996B1 Optical error minimization in a semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置中的光学误差最小化
公开(公告)号：US07098996B1
公开(公告)日：2006-08-29
申请号：US11075195
申请日：2005-03-07
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： G03B27/54 , G03B27/62 , G03B27/68
CPC分类号： G03F1/64 , G03F1/62 , G03F7/70308 , G03F7/70425 , G03F7/70783 , G03F7/70983
摘要： Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.
摘要翻译：提供了用于克服半导体制造装置中的掩模版和其他硬件使用发生的光学误差的系统和方法。系统和方法将光学误差最小化，例如由于在掩模版或掩模上引起的重力下垂引起的误差，用于将图案投影到晶片上。减少的误差允许使用更大的掩模和掩模 - 同时保持光学精度; 并改善光预算管理。

6. 发明授权

US07023530B1 Dual source lithography for direct write application 失效
标题翻译：双源光刻直接写入应用
公开(公告)号：US07023530B1
公开(公告)日：2006-04-04
申请号：US11075239
申请日：2005-03-07
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： G03B27/32 , G03B27/42 , G03B27/44
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70383 , G03F7/7045 , H01J37/3174 , H01J2237/31757
摘要： A dual exposure source lithography system forms a first and a second portion of a pattern on a wafer. An optical lithography module forms the first portion of the pattern. A non-optical lithography module forms the second portion of the pattern using a non-optical lithography exposure source. The non-optical exposure source is an electron beam lithography source, an EUV source, an x-ray source, or another next generation lithography system exposure source. A mask design file is decomposed into separate design files reflecting critical and non-critical components of the pattern to be formed on the wafer.
摘要翻译：双曝光源光刻系统在晶片上形成图案的第一部分和第二部分。光学光刻模块形成图案的第一部分。非光学光刻模块使用非光学光刻曝光源形成图案的第二部分。非光学曝光源是电子束光刻源，EUV源，x射线源或另一下一代光刻系统曝光源。掩模设计文件被分解成反映要在晶片上形成的图案的关键和非关键部件的单独的设计文件。

7. 发明授权

US06943055B2 Method and apparatus for detecting backside contamination during fabrication of a semiconductor wafer 失效
标题翻译：用于在制造半导体晶片期间检测背面污染的方法和装置
公开(公告)号：US06943055B2
公开(公告)日：2005-09-13
申请号：US10628601
申请日：2003-07-28
申请人： Michael J. Berman , George E. Bailey , Rennie G. Barber
发明人： Michael J. Berman , George E. Bailey , Rennie G. Barber
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L21/67259
摘要： A method of detecting contamination on a backside of a semiconductor wafer includes the steps of positioning the backside of the wafer in contact with a detection surface of a contaminant sensor, and detecting deformation of the detection surface of the contaminant sensor. The contaminant sensor may be incorporated into a fabrication device such as a wafer handling device, or can be utilized in the construction of a stand-alone device. An apparatus for detecting contamination on the backside of a semiconductor wafer is also disclosed.
摘要翻译：检测半导体晶片背面的污染物的方法包括以下步骤：将晶片的背面与污染物传感器的检测表面接触，并检测污染物传感器的检测表面的变形。污染物传感器可以结合到诸如晶片处理装置的制造装置中，或者可以用于独立装置的构造。还公开了一种用于检测半导体晶片背面污染的装置。

8. 发明授权

US06894762B1 Dual source lithography for direct write application 失效
标题翻译：双源光刻直接写入应用
公开(公告)号：US06894762B1
公开(公告)日：2005-05-17
申请号：US10246286
申请日：2002-09-17
申请人： Michael J. Berman , George E. Bailey
发明人： Michael J. Berman , George E. Bailey
IPC分类号： G03B27/32 , G03B27/44 , G03B27/54 , G03F7/20 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70383 , G03F7/7045 , H01J37/3174 , H01J2237/31757
摘要： A dual exposure source lithography system forms a first and a second portion of a pattern on a wafer. An optical lithography module forms the first portion of the pattern. A non-optical lithography module forms the second portion of the pattern using a non-optical lithography exposure source. The non-optical exposure source is an electron beam lithography source, an EUV source, an x-ray source, or another next generation lithography system exposure source. A mask design file is decomposed into separate design files reflecting critical and non-critical components of the pattern to be formed on the wafer.
摘要翻译：双曝光源光刻系统在晶片上形成图案的第一部分和第二部分。光学光刻模块形成图案的第一部分。非光学光刻模块使用非光学光刻曝光源形成图案的第二部分。非光学曝光源是电子束光刻源，EUV源，x射线源或另一下一代光刻系统曝光源。掩模设计文件被分解成反映要在晶片上形成的图案的关键和非关键部件的单独的设计文件。

9. 发明授权

US07005217B2 Chromeless phase shift mask 失效
标题翻译：无色相移掩模
公开(公告)号：US07005217B2
公开(公告)日：2006-02-28
申请号：US10406847
申请日：2003-04-04
申请人： George E. Bailey , Neal P. Callan , John V. Jensen
发明人： George E. Bailey , Neal P. Callan , John V. Jensen
IPC分类号： G03F9/00
CPC分类号： G03F1/32 , G03F1/38 , G03F7/70283
摘要： A photolithographic mask for receiving light at a wavelength, phase, and intensity and printing a desired image on a substrate with an optical system. The mask is formed on an optically transmissive substrate, called a mask blank. The mask blank is preferably one hundred percent transmissive of the light intensity at the wavelength. At least one layer of an attenuated material that is at least partially transmissive to the wavelength of the light is formed on the optically transmissive substrate. The at least one layer of the attenuated material preferably blocks from about fifty percent to about ninety-four percent of the intensity of the light at the wavelength, whereas the prior art masks use materials that block about six percent of the intensity of the light at the wavelength. The attenuated material defines three feature types on the mask, including a primary image having edges, a scattering bar disposed near the edges of the primary image, and a background region. The primary image represents the desired image to be printed on the substrate. The scattering bar is adapted to enhance a contrast of the primary image and to at least reduce the intensity of the light at the edges of the primary image. The background region is adapted to block the light without using a material that is non transmissive to the light, such as chrome. By “block the light” it is meant that the background region substantially and preferably reduces the intensity of the light passing through the background region to about zero.
摘要翻译：一种光刻掩模，用于接收波长，相位和强度的光，并用光学系统在基板上印刷所需的图像。掩模形成在光学透射基底上，称为掩模毛坯。掩模毛坯优选在波长处的光强度的百分之百的透射率。在光学透射基底上形成至少一部分对光的波长至少部分透射的衰减材料层。衰减材料的至少一层优选阻挡波长处的光强度的约百分之五十到百分之九十四，而现有技术的掩模使用阻挡光的强度的约六分之一的材料波长。衰减材料在掩模上限定三个特征类型，包括具有边缘的主图像，设置在主图像边缘附近的散射条以及背景区域。主图像表示要印刷在基板上的所需图像。散射棒适于增强主图像的对比度，并且至少减小主图像边缘处的光的强度。背景区域适于阻挡光，而不使用不透光的材料，例如铬。通过“阻挡光”是指背景区域基本上优选地将通过背景区域的光的强度降低到大约零。

10. 发明授权

US6102143A Shaped polycrystalline cutter elements 失效
标题翻译：成型多晶切割元件
公开(公告)号：US6102143A
公开(公告)日：2000-08-15
申请号：US72471
申请日：1998-05-04
申请人： Shelly R. Snyder , George E. Bailey , Eoin O'Tighearnaigh
发明人： Shelly R. Snyder , George E. Bailey , Eoin O'Tighearnaigh
IPC分类号： E21B10/56 , E21B10/573 , E21B10/46
CPC分类号： E21B10/5735
摘要： A cutting element is composed of a metal carbide stud having an outer hemispherical distal end which has a series of annular ridges. The tops of the annual ridges are substantially non-planar, i.e., curvilinear, such that the angle formed between the slope on either side is less than 120.degree.. There are no surfaces tangent to vertical on such ridges. A layer of polycrystalline superabrasive material is disposed over the annular ridges. This cutter is easily manufacturable as the metal stud can be pressed and extracted from the punch without further machining and the surface geometry of the metal stud allows for complete PCD compaction during diamond sintering.
摘要翻译：切割元件由具有外半球形远端的金属硬质合金柱体组成，其具有一系列环形脊。年度脊的顶部基本上是非平面的，即曲线的，使得在任一侧的斜面之间形成的角度小于120°。在这种脊上没有与垂直相切的表面。一层多晶超磨料材料设置在环形脊上。该切割机易于制造，因为金属螺柱可以从冲头中冲压而不进一步加工，并且金属螺柱的表面几何形状允许金刚石烧结期间的完全PCD压实。

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