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1. 发明申请

US20070145402A1 SEMICONDUCTOR COMPONENT WHICH EMITS RADIATION, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：其辐射的半导体元件及其制造方法
公开(公告)号：US20070145402A1
公开(公告)日：2007-06-28
申请号：US11684347
申请日：2007-03-09
申请人： Dominik Eisert , Volker Harle , Frank Kuhn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
发明人： Dominik Eisert , Volker Harle , Frank Kuhn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/32139 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/42 , H01L33/46
摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.
摘要翻译：本发明描述了一种具有多层结构的辐射发射半导体部件，该多层结构包含发射有辐射的活性层和对辐射透明的窗口，该窗口具有与第一主面相对的第一主面和第二主面，并且其第一主体面临着多层结构。在窗口中至少形成一个凹槽，其优选地具有第二主面的凹陷的形式或者作为边缘挖掘。窗口或凹部的至少一个侧表面至少部分地设置有接触表面。或者或累积地，部件的至少一个接触表面具有多个开口。

2. 发明授权

US07205578B2 Semiconductor component which emits radiation, and method for producing the same 有权
标题翻译：发射辐射的半导体元件及其制造方法
公开(公告)号：US07205578B2
公开(公告)日：2007-04-17
申请号：US10203728
申请日：2001-02-15
申请人： Dominik Eisert , Volker Härle , Frank Kühn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
发明人： Dominik Eisert , Volker Härle , Frank Kühn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/32139 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/42 , H01L33/46
摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4).At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).
摘要翻译：本发明描述了一种具有多层结构（4）的辐射发射半导体部件，其包含发射有辐射的有源层（5）和对具有第一主面（2）和第二主面（2）的辐射透明的窗口主面（3）与第一主面（2）相对，并且其第一主面（2）与多层结构（4）相邻。

3. 发明申请

US20050003565A1 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US20050003565A1
公开(公告)日：2005-01-06
申请号：US10837828
申请日：2004-05-03
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L33/00 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/40 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：辐射发射半导体器件，其制造方法和发射光学器件。一种具有多层结构（100）的辐射发射半导体器件（100），包括辐射发射有源层（10），具有用于在多层结构（100）中施加电流的电触点（30,40）以及无线电透过窗口层 20）。窗层仅排列在背离半导体器件的主辐射方向的多层结构（100）的侧面上，并具有至少一个侧壁，该侧壁包括第一侧壁部分（20a），该第一侧壁部分倾斜地，或者以逐步的方式朝向垂直于多层序列的半导体器件的中心轴线。在从多层结构观察的随后的向后延伸的过程中，侧壁转变成垂直于多层结构延伸的第二侧壁部分（20b），即平行于中心轴线的部分包围第二侧壁部分（20b）的窗口层（20）形成用于半导体器件的安装基座。第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

4. 发明申请

US20080179380A1 RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR COMPONENT 有权
标题翻译：辐射发射半导体元件和用于制造半导体元件的方法
公开(公告)号：US20080179380A1
公开(公告)日：2008-07-31
申请号：US11567977
申请日：2006-12-07
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
IPC分类号： A47J36/02
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
摘要翻译：辐射发射半导体组件具有改进的辐射效率。半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。多层结构邻接窗口的第一主表面。为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

5. 发明授权

US06891199B2 Radiation-emitting semiconductor chip and light-emitting diode 有权
标题翻译：辐射发射半导体芯片和发光二极管
公开(公告)号：US06891199B2
公开(公告)日：2005-05-10
申请号：US10343851
申请日：2001-07-24
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/20 , H01L33/24 , H01L29/16
CPC分类号： H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
摘要翻译：用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。以这种方式可以显着改善光提取。

6. 发明授权

US07195942B2 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US07195942B2
公开(公告)日：2007-03-27
申请号：US10837828
申请日：2004-05-03
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L21/50
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device.A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：辐射发射半导体器件，其制造方法和发射光学器件。

7. 发明授权

US06730939B2 Radiation emitting semiconductor device 有权
标题翻译：辐射发射半导体器件
公开(公告)号：US06730939B2
公开(公告)日：2004-05-04
申请号：US09781753
申请日：2001-02-12
申请人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
发明人： Dominik Eisert , Volker Haerle , Frank Kuehn , Manfred Mundbrod-Vangerow , Uwe Strauss , Ulrich Zehnder
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.
摘要翻译：一种具有多层结构的辐射发射半导体器件，包括发射有辐射的有源层，具有用于在多层结构中施加电流的电触点和无线电透过窗口层。窗层仅排列在背离半导体器件的主辐射方向的多层结构的侧面上，并且具有至少一个侧壁，该侧壁包括第一侧壁部分，该第一侧壁部分倾斜地，凹形地或逐步地向着半导体器件的垂直于多层序列的中心轴线。在从多层结构观察的其后向后侧的延伸中，侧壁转变成垂直于多层结构延伸的第二侧壁部分，即平行于中心轴线的部分和窗口层的部分包围第二侧壁部分形成用于半导体器件的安装基座。第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

8. 发明申请

US20060289854A1 OPTICAL SEMICONDUCTOR DEVICE WITH MULTIPLE QUANTUM WELL STRUCTURE 有权
标题翻译：具有多个量子阱结构的光学半导体器件
公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

9. 发明授权

US06849881B1 Optical semiconductor device comprising a multiple quantum well structure 有权
标题翻译：包括多量子阱结构的光学半导体器件
公开(公告)号：US06849881B1
公开(公告)日：2005-02-01
申请号：US09913394
申请日：2000-11-20
申请人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L32/26
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.
摘要翻译：提出了具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和势垒层交替层叠。器件阱层包括基于具有第一电子能的氮化物半导体材料的第一组合物。阻挡层包括氮化物半导体材料的第二组合物，其电子能量与第一电子能量相比较高。井和阻挡层沿生长方向通过辐射活性层的井层，其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

10. 发明申请

US20050116216A1 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US20050116216A1
公开(公告)日：2005-06-02
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

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