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1. 发明授权

US07812410B2 Suspended-gate MOS transistor with non-volatile operation 有权
标题翻译：具有非易失性操作的悬挂栅极MOS晶体管
公开(公告)号：US07812410B2
公开(公告)日：2010-10-12
申请号：US12168417
申请日：2008-07-07
申请人： Michael Collonge , Maud Vinet , Olivier Thomas
发明人： Michael Collonge , Maud Vinet , Olivier Thomas
IPC分类号： H01L27/20 , H01L41/04 , H01L41/083
CPC分类号： G11C23/00 , B82Y10/00 , G11C2213/17 , H01L29/515 , H01L29/78654
摘要： A microelectronic device, including at least one transistor including: on a substrate, a semiconductor zone with a channel zone covered with a gate dielectric zone, a mobile gate, suspended above the gate dielectric zone and separated from the gate dielectric zone by an empty space, which the gate is located at an adjustable distance from the gate dielectric zone, and a piezoelectric actuation device including a stack formed by at least one layer of piezoelectric material resting on a first biasing electrode, and a second biasing electrode resting on the piezoelectric material layer, wherein the gate is attached to the first biasing electrode and is in contact with the first biasing electrode, and the piezoelectric actuation device is configured to move the gate with respect to the channel zone.
摘要翻译：一种微电子器件，包括至少一个晶体管，其包括：在衬底上，具有覆盖有栅极介电区的沟道区的半导体区，悬浮在栅极介电区上方的移动栅极，并与栅极介电区隔开空位栅极位于与栅极介电区域可调节的距离处，以及压电致动装置，其包括由至少一层静电在第一偏置电极上的压电材料形成的叠层，以及沉积在压电材料上的第二偏置电极层，其中所述栅极附接到所述第一偏置电极并且与所述第一偏置电极接触，并且所述压电致动装置被配置为相对于所述沟道区移动所述栅极。

2. 发明申请

US20090014769A1 SUSPENDED-GATE MOS TRANSISTOR WITH NON-VOLATILE OPERATION 有权
标题翻译：具有非挥发性操作的悬挂栅MOS晶体管
公开(公告)号：US20090014769A1
公开(公告)日：2009-01-15
申请号：US12168417
申请日：2008-07-07
申请人： Michael Collonge , Maud Vinet , Olivier Thomas
发明人： Michael Collonge , Maud Vinet , Olivier Thomas
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： G11C23/00 , B82Y10/00 , G11C2213/17 , H01L29/515 , H01L29/78654
摘要： A transistor device with a mobile suspended gate, the device comprising means for piezoelectric actuation of the gate, and a method for producing such a device.
摘要翻译：一种具有移动悬挂栅极的晶体管器件，该器件包括用于栅极的压电驱动的装置，以及用于制造这种器件的方法。

3. 发明授权

US07768821B2 Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation 有权
标题翻译：非易失性SRAM存储单元配有移动栅极晶体管和压电操作
公开(公告)号：US07768821B2
公开(公告)日：2010-08-03
申请号：US12169264
申请日：2008-07-08
申请人： Olivier Thomas , Michael Collonge , Maud Vinet
发明人： Olivier Thomas , Michael Collonge , Maud Vinet
IPC分类号： G11C11/00 , G11C11/34
CPC分类号： H01L27/1104 , B82Y10/00 , G11C14/0054 , G11C23/00 , G11C2213/17 , H01L27/11 , H01L29/515
摘要： The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
摘要翻译：本申请涉及配备有悬挂式移动门的非易失性随机存取存储器单元和用于操作门的压电装置。

4. 发明申请

US20090016095A1 NON-VOLATILE SRAM MEMORY CELL EQUIPPED WITH MOBILE GATE TRANSISTORS AND PIEZOELECTRIC OPERATION 有权
标题翻译：具有移动栅极晶体管和压电操作的非易失SRAM存储单元
公开(公告)号：US20090016095A1
公开(公告)日：2009-01-15
申请号：US12169264
申请日：2008-07-08
申请人： Olivier Thomas , Michael Collonge , Maud Vinet
发明人： Olivier Thomas , Michael Collonge , Maud Vinet
IPC分类号： G11C11/00 , G11C11/34
CPC分类号： H01L27/1104 , B82Y10/00 , G11C14/0054 , G11C23/00 , G11C2213/17 , H01L27/11 , H01L29/515
摘要： The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
摘要翻译：本申请涉及配备有悬挂式移动门的非易失性随机存取存储器单元和用于操作门的压电装置。

5. 发明授权

US07973350B2 Strained-channel transistor device 有权
标题翻译：应变通道晶体管器件
公开(公告)号：US07973350B2
公开(公告)日：2011-07-05
申请号：US12152353
申请日：2008-05-13
申请人： Michael Collonge , Maud Vinet
发明人： Michael Collonge , Maud Vinet
IPC分类号： H01L21/02
CPC分类号： H01L29/78654 , H01L29/66772 , H01L29/7843 , H01L29/78696
摘要： Semiconductor device comprising at least: one substrate, a transistor comprising at least one source region, one drain region, one channel and one gate, a planar layer based on at least one piezoelectric material, resting at least on the gate and capable of inducing at least mechanical strain on the transistor channel, in a direction that is substantially perpendicular to the plane of a face of the piezoelectric layer situated on the gate side, the piezoelectric layer being arranged between two biasing electrodes, one of the two biasing electrodes being formed by a first layer based on at least one electrically conductive material such that the piezoelectric layer is arranged between this first conductive layer and the gate of the transistor.
摘要翻译：半导体器件至少包括：一个衬底，包括至少一个源极区，一个漏极区，一个沟道和一个栅极的晶体管，基于至少一个压电材料的平面层，至少搁在栅极上并能够诱导晶体管沟道上的最小的机械应变在基本上垂直于位于栅极侧的压电层的面的平面的方向上，压电层设置在两个偏置电极之间，两个偏置电极之一由基于至少一种导电材料的第一层，使得压电层布置在该第一导电层和晶体管的栅极之间。

6. 发明申请

US20080283877A1 Strained-channel transistor device 有权
标题翻译：应变通道晶体管器件
公开(公告)号：US20080283877A1
公开(公告)日：2008-11-20
申请号：US12152353
申请日：2008-05-13
申请人： Michael Collonge , Maud Vinet
发明人： Michael Collonge , Maud Vinet
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： H01L29/78654 , H01L29/66772 , H01L29/7843 , H01L29/78696
摘要： Semiconductor device comprising at least: one substrate, a transistor comprising at least one source region, one drain region, one channel and one gate, a planar layer based on at least one piezoelectric material, resting at least on the gate and capable of inducing at least mechanical strain on the transistor channel, in a direction that is substantially perpendicular to the plane of a face of the piezoelectric layer situated on the gate side, piezoelectric layer being arranged between two biasing electrodes, one of the two biasing electrodes being formed by a first layer based on at least one electrically conductive material such that the piezoelectric layer is arranged between this first conductive layer and the gate of the transistor.
摘要翻译：半导体器件至少包括：一个衬底，包括至少一个源极区，一个漏极区，一个沟道和一个栅极的晶体管，基于至少一个压电材料的平面层，至少搁在栅极上并能够诱导在晶体管沟道上的基本上垂直于位于栅极侧的压电层的面的平面的方向上的最小机械应变，压电层布置在两个偏压电极之间，两个偏置电极之一由基于至少一种导电材料的第一层，使得压电层布置在该第一导电层和晶体管的栅极之间。

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