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1. 发明申请

US20050106439A1 Controlled heating and cooling of mixed conducting metal oxide materials 有权
标题翻译：混合导电金属氧化物材料的受控加热和冷却
公开(公告)号：US20050106439A1
公开(公告)日：2005-05-19
申请号：US10714996
申请日：2003-11-17
申请人： Michael Carolan , Matthew Watson , Eric Minford , Stephen Motika , Dale Taylor
发明人： Michael Carolan , Matthew Watson , Eric Minford , Stephen Motika , Dale Taylor
IPC分类号： B01D53/22 , B01D67/00 , B01D71/02 , C04B35/01 , C04B35/26 , C04B35/50 , C04B41/80 , H01B13/00 , H01M8/12 , C01B13/14
CPC分类号： B01D71/024 , B01D53/22 , B01D53/226 , B01D53/228 , B01D67/0083 , B01D67/0093 , B01D2325/22 , B01D2325/24 , B01J2219/00006 , C04B35/01 , C04B35/2641
摘要： Method for processing an article comprising a mixed conducting metal oxide material, which method comprises (a) contacting the article with an oxygen-containing gas and reducing or increasing the temperature of the oxygen-containing gas; (b) when the temperature of the oxygen-containing gas is reduced, reducing the oxygen activity in the oxygen-containing gas; and (c) when the temperature of the oxygen-containing gas is increased, increasing the oxygen activity in the oxygen-containing gas.
摘要翻译：用于处理包含混合导电金属氧化物材料的制品的方法，该方法包括（a）使制品与含氧气体接触并降低或提高含氧气体的温度; （b）当含氧气体的温度降低时，降低含氧气体中的氧活度; 和（c）当含氧气体的温度升高时，增加含氧气体中的氧活性。

2. 发明申请

US20050011859A1 Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications 审中-公开
标题翻译：用于选择性生物蚀刻应用的不饱和含氧碳氟化合物
公开(公告)号：US20050011859A1
公开(公告)日：2005-01-20
申请号：US10619911
申请日：2003-07-15
申请人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
发明人： Bing Ji , Ronald Pearlstein , Robert Syvret , Peter Badowski , Stephen Motika , Eugene Karwacki , Kerry Berger
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01B13/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising an unsaturated oxygenated fluorocarbon. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to at least partially react with and remove at least a portion of the dielectric material. In another embodiment of the present invention, there is provided a method for making an unsaturated oxygenated fluorocarbon.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地，在一个实施方案中，提供了一种用于在包含不饱和氧化碳氟化合物的层状基材中蚀刻电介质材料的混合物。本发明的混合物可以在包含电介质材料的层状基材上与足以至少部分地反应并除去至少一部分电介质材料的条件下接触。在本发明的另一个实施方案中，提供了制备不饱和氧化碳氟化合物的方法。

3. 发明申请

US20060040054A1 Passivating ALD reactor chamber internal surfaces to prevent residue buildup 审中-公开
标题翻译：钝化ALD反应器室内表面以防止残留物积聚
公开(公告)号：US20060040054A1
公开(公告)日：2006-02-23
申请号：US10920541
申请日：2004-08-18
申请人： Ronald Pearlstein , Bing Ji , Stephen Motika
发明人： Ronald Pearlstein , Bing Ji , Stephen Motika
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： This invention is directed to an improved method for preventing deposition residue buildup on the internal surfaces of an ALD reactor chamber. In an ALD deposition process, the surfaces of a substrate are treated with an initiating precursor generating a labile atom reactive with a deposition precursor. Excess initiating precursor is removed from the reactor and the substrate surface then is exposed to a deposition precursor reactive with the labile atom under conditions for generating a fugitive reaction product containing the labile atom and leaving a deposition product. The process is repeated generating alternate layers of initiation and deposition precursor reaction products. The improvement in the ALD process resides in passivating the internal surfaces of the reactor by removing labile atoms reactable with either the initiating or deposition precursors prior to effecting ALD deposition.
摘要翻译：本发明涉及一种用于防止在ALD反应器室的内表面上产生沉积残渣的改进方法。在ALD沉积工艺中，用起始前体处理底物的表面，产生与沉积前体反应的不稳定的原子。从反应器中除去过量的引发前体，然后在产生含有不稳定原子的离散反应产物并留下沉积产物的条件下将底物表面暴露于与不稳定原子反应的沉积前体。该过程重复产生起始和沉积前体反应产物的交替层。 ALD方法的改进在于通过在实现ALD沉积之前去除与起始或沉积前体可反应的不稳定原子来钝化反应器的内表面。

4. 发明申请

US20060027249A1 Method for removing carbon-containing residues from a substrate 失效
公开(公告)号：US20060027249A1
公开(公告)日：2006-02-09
申请号：US11178545
申请日：2005-07-12
申请人： Andrew Johnson , Hoshang Subawalla , Bing Ji , Raymond Vrtis , Eugene Karwacki , Robert Ridgeway , Peter Maroulis , Mark O'Neill , Aaron Lukas , Stephen Motika
发明人： Andrew Johnson , Hoshang Subawalla , Bing Ji , Raymond Vrtis , Eugene Karwacki , Robert Ridgeway , Peter Maroulis , Mark O'Neill , Aaron Lukas , Stephen Motika
IPC分类号： C25F5/00
CPC分类号： C23C16/4405
摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.

5. 发明申请

US20050014383A1 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas 审中-公开
标题翻译：在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂
公开(公告)号：US20050014383A1
公开(公告)日：2005-01-20
申请号：US10619922
申请日：2003-07-15
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/3065 , C09K13/08 , H01L21/311 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的电介质材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

6. 发明申请

US20070224829A1 Use Of Hypofluorites, Fluoroperoxides, And/Or Fluorotrioxides As Oxidizing Agent In Fluorocarbon Etch Plasmas 审中-公开
标题翻译：在氟碳蚀刻等离子体中使用次氟酸盐，氟过氧化物和/或氟三氧化物作为氧化剂
公开(公告)号：US20070224829A1
公开(公告)日：2007-09-27
申请号：US11693302
申请日：2007-03-29
申请人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
发明人： Bing Ji , Stephen Motika , Robert Syvret , Peter Badowski , Eugene Karwacki , Howard Withers , Ronald Pearlstein
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A mixture and a method comprising same for etching a dielectric material from a layered substrate are disclosed herein. Specifically, in one embodiment, there is provided a mixture for etching a dielectric material in a layered substrate comprising: a fluorocarbon gas, a fluorine-containing oxidizer gas selected from the group consisting of a hypofluorite, a fluoroperoxide, a fluorotrioxide, and combinations thereof; and optionally an inert diluent gas. The mixture of the present invention may be contacted with a layered substrate comprising a dielectric material under conditions sufficient to form active species that at least partially react with and remove at least a portion of the dielectric material.
摘要翻译：本文公开了一种用于从层状衬底蚀刻电介质材料的混合物及其方法。具体地说，在一个实施方案中，提供了一种用于蚀刻层状基板中的介电材料的混合物，包括：碳氟化合物气体，选自次氟酸盐，氟过氧化物，氟三氧化物及其组合的含氟氧化剂气体 ; 和任选的惰性稀释气体。本发明的混合物可以在足以形成至少部分地与电介质材料的至少一部分反应并除去介电材料的至少一部分的活性物质的条件下与包含电介质材料的层状基板接触。

7. 发明申请

US20060107831A1 Xenon recovery system 有权
标题翻译：氙气回收系统
公开(公告)号：US20060107831A1
公开(公告)日：2006-05-25
申请号：US10996743
申请日：2004-11-24
申请人： Eugene Karwacki , Timothy Golden , Bing Ji , Stephen Motika , Thomas Farris
发明人： Eugene Karwacki , Timothy Golden , Bing Ji , Stephen Motika , Thomas Farris
IPC分类号： B01D53/02
CPC分类号： B01D53/04 , B01D53/0476 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2253/304 , B01D2256/18 , B01D2257/104 , B01D2257/11 , B01D2257/2066 , B01D2257/504 , B01D2257/80 , B01D2258/0216 , B01D2259/40001 , B01D2259/40013 , B01D2259/40043 , B01D2259/40088 , B01D2259/401 , B01D2259/4533 , C01B23/0052 , C01B2210/0037 , Y02C10/08 , Y02P20/152 , Y02P20/154
摘要： A first aspect of a process of recovering xenon from feed gas includes: providing an adsorption vessel containing adsorbent having a Xe/N2 selectivity ratio 50% and an initial xenon concentration ≧0.5%; evacuating the adsorption vessel; and purging the adsorption vessel at a purge-to-feed ratio ≧10. The final xenon concentration is ≧15× the initial xenon concentration. A second aspect of the process includes providing an adsorption vessel containing adsorbent having a Xe Henry's law Constant ≧50 mmole/g/atm; feeding into the adsorption vessel feed gas having an initial nitrogen concentration >50% and an initial xenon concentration ≧0.5%; heating and purging the adsorption vessel to recover xenon having a final concentration ≧15× its initial concentration. Apparatus for performing the process are also described.
摘要翻译：从进料气中回收氙的方法的第一方面包括：提供含有Xe / N 2选择比<75的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 抽吸吸附容器; 并以吹扫 - 进料比> = 10吹扫吸附容器。最终的氙浓度> 15倍是初始氙浓度。该方法的第二方面包括提供含有Xe亨利定律常数> 50mmole / g / atm的吸附剂的吸附容器; 进入初始氮浓度> 50％，初始氙浓度> = 0.5％的吸附容器进料气体; 加热和吹扫吸附容器以回收最终浓度> 15倍于其初始浓度的氙气。还描述了用于执行该过程的装置。

8. 发明申请

US20060040508A1 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
标题翻译：使用分层超晶格材料保护半导体加工设备的内部部件的方法
公开(公告)号：US20060040508A1
公开(公告)日：2006-02-23
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
发明人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译：本发明涉及在蚀刻和/或清洁过程中保护诸如等离子体反应器或反应物种发生器的半导体加工设备的内部部件抵抗物理和/或化学损伤的装置和方法。使用具有三种或更多种金属元素的层状超晶格材料，例如钽酸锶钡（SBT），在反应室的内部组分的表面上形成保护屏障。

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