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1. 发明授权

US06892738B2 Apparatus and methods for reducing damage to substrates during megasonic cleaning processes 失效
标题翻译：在超声波清洗过程中减少对基板损伤的装置和方法
公开(公告)号：US06892738B2
公开(公告)日：2005-05-17
申请号：US10760596
申请日：2004-01-20
申请人： Mario E. Bran , Michael B. Olesen , Yi Wu
发明人： Mario E. Bran , Michael B. Olesen , Yi Wu
IPC分类号： B06B3/00 , B08B3/12 , C25F5/00
CPC分类号： B08B3/12 , B06B3/00 , Y10S134/902 , Y10S438/906
摘要： The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.
摘要翻译：本发明提供了一种超声波清洗装置，其被配置为提供对衬底的有效清洁而不会损坏衬底。该装置包括探针，其具有被配置成减小正常入射波与浅角波的比例的各种横截面之一。一个这样的横截面包括沿着探针的下边缘的一部分延伸的通道。另一个横截面包括探头的较窄的下边缘。另一个截面是椭圆形。另一个横截面包括源于探头下缘的横向孔。作为提供具有不同于圆形的横截面的探针的替代或补充，本发明还可以提供具有粗糙化的下表面的探针。

2. 发明授权

US6158445A Semiconductor wafer cleaning method 失效
标题翻译：半导体晶圆清洗方法
公开(公告)号：US6158445A
公开(公告)日：2000-12-12
申请号：US358568
申请日：1999-07-20
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B3/12 , C11D3/39 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , B08B3/08 , C23G1/02
CPC分类号： H01L21/02052 , B08B3/12 , C11D11/0047 , C11D11/007 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
摘要翻译：将半导体晶片定位在清洗槽中并经受一个或多个高度稀释的清洁溶液的顺序流动，其被注入到罐的下端并允许在上端溢出。一种溶液包括一部分氢氧化铵，两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。第一个溶液倾倒后，冲洗水流过罐。第二种溶液包括高度稀释的氢氟酸。第三个解决方案比第一个解决方案更稀。第四种溶液含有用去离子水大大稀释的盐酸。解决方案是通过将化学品注入进入的DI水管线或直接进入罐中来启动。清洗槽在其下部设有兆声波发生器，用于选择性地应用兆声波能量。罐底快速排放阀能够快速倾倒溶液，然后进行一个或多个冲洗步骤，包括在喷涂时快速补充，然后倾倒冲洗水。

3. 发明授权

US5908509A Semiconductor wafer cleaning system 失效
公开(公告)号：US5908509A
公开(公告)日：1999-06-01
申请号：US908330
申请日：1997-08-07
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B3/12 , C11D3/39 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , B08B3/08 , B08B7/02 , C23G1/02
CPC分类号： H01L21/02052 , B08B3/12 , C11D11/0047 , C11D11/007 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S134/902 , Y10S438/906
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

4. 发明授权

US5656097A Semiconductor wafer cleaning system 失效
标题翻译：半导体晶圆清洗系统
公开(公告)号：US5656097A
公开(公告)日：1997-08-12
申请号：US361139
申请日：1994-12-21
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B3/12 , C11D3/39 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , B08B3/08 , B08B7/02 , C23G1/02
CPC分类号： H01L21/02052 , B08B3/12 , C11D11/0047 , C11D11/007 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S134/902 , Y10S438/906
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution contains one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solutions contains highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
摘要翻译：将半导体晶片定位在清洗槽中并经受从罐的下端喷射并允许在上端溢出的一个或多个高度稀释的清洁溶液的顺序流动。一种溶液含有一部分氢氧化铵，两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。第一个溶液倾倒后，冲洗水流过罐。第二种溶液含有高度稀释的氢氟酸。第三个解决方案比第一个解决方案更稀。第四种溶液含有用去离子水大大稀释的盐酸。清洗槽在其下部设有兆声波发生器，用于选择性地应用兆声波能量。罐底快速排放阀能够快速倾倒溶液，然后进行一个或多个冲洗步骤，包括在喷涂时快速补充，然后倾倒冲洗水。

5. 发明授权

US6122837A Centrifugal wafer processor and method 失效
标题翻译：离心晶圆处理器及方法
公开(公告)号：US6122837A
公开(公告)日：2000-09-26
申请号：US103930
申请日：1998-06-24
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： H01L21/00 , F26B5/08
CPC分类号： H01L21/67028
摘要： A dryer for processing semiconductor substrates which rotates a carrier containing the substrates within a housing in combination with a bubbler which heats and directs a gas containing a water tension reducing vapor to the housing to contact the substrates and thereby hasten drying, decrease water marking, and decrease contamination.
摘要翻译：一种用于处理半导体衬底的干燥器，其将包含基底的载体旋转在壳体内，与起泡器组合，起泡器将含有减压蒸汽的气体加热并引导到壳体以接触基底，从而加速干燥，减少水分，以及减少污染

6. 发明授权

US5950645A Semiconductor wafer cleaning system 失效
标题翻译：半导体晶圆清洗系统
公开(公告)号：US5950645A
公开(公告)日：1999-09-14
申请号：US910033
申请日：1997-08-11
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B3/12 , C11D3/39 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , B08B3/10
CPC分类号： H01L21/02052 , B08B3/12 , C11D11/0047 , C11D11/007 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
摘要翻译：将半导体晶片定位在清洗槽中并经受一个或多个高度稀释的清洁溶液的顺序流动，其被注入到罐的下端并允许在上端溢出。一种溶液包括一部分氢氧化铵，两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。第一个溶液倾倒后，冲洗水流过罐。第二种溶液包括高度稀释的氢氟酸。第三个解决方案比第一个解决方案更稀。第四种溶液含有用去离子水大大稀释的盐酸。解决方案是通过将化学品注入进入的DI水管线或直接进入罐中来启动。清洗槽在其下部设有兆声波发生器，用于选择性地应用兆声波能量。罐底快速排放阀能够快速倾倒溶液，然后进行一个或多个冲洗步骤，包括在喷涂时快速补充，然后倾倒冲洗水。

7. 发明授权

US06679272B2 Megasonic probe energy attenuator 有权
标题翻译：超声波探头能量衰减器
公开(公告)号：US06679272B2
公开(公告)日：2004-01-20
申请号：US09922509
申请日：2001-08-03
申请人： Mario E. Bran , Michael B. Olesen , Yi Wu
发明人： Mario E. Bran , Michael B. Olesen , Yi Wu
IPC分类号： C25F500
CPC分类号： B08B3/12 , B06B3/00 , Y10S134/902 , Y10S438/906
摘要： The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.
摘要翻译：本发明提供了一种超声波清洗装置，其被配置为提供对衬底的有效清洁，而不会损坏衬底。该装置包括探针，其具有被配置成减小正常入射波与浅角波的比例的各种横截面之一。一个这样的横截面包括沿着探针的下边缘的一部分延伸的通道。另一个横截面包括探头的较窄的下边缘。另一个截面是椭圆形。另一个横截面包括源于探头下缘的横向孔。作为提供具有不同于圆形的横截面的探针的替代或补充，本发明还可以提供具有粗糙化的下表面的探针。

8. 发明授权

US06378534B1 Semiconductor wafer cleaning system 有权
标题翻译：半导体晶圆清洗系统
公开(公告)号：US06378534B1
公开(公告)日：2002-04-30
申请号：US09694938
申请日：2000-10-23
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B308
CPC分类号： H01L21/02052 , B08B3/12 , C11D3/3947 , C11D7/06 , C11D7/08 , C11D11/0047 , C11D11/007 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution has one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution has highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
摘要翻译：将半导体晶片定位在清洗槽中并经受一个或多个高度稀释的清洁溶液的顺序流动，其被注入到罐的下端并允许在上端溢出。一种溶液具有一部分氢氧化铵，两份过氧化氢和300-600份去离子水以及高纯度表面活性剂。第一个溶液倾倒后，冲洗水流过罐。第二种溶液具有高度稀释的氢氟酸。第三个解决方案比第一个解决方案更稀。第四种溶液含有用去离子水大大稀释的盐酸。解决方案是通过将化学品注入进入的DI水管线或直接进入罐中来启动。清洗槽在其下部设有兆声波发生器，用于选择性地应用兆声波能量。罐底快速排放阀能够快速倾倒溶液，然后进行一个或多个冲洗步骤，包括在喷涂时快速补充，然后倾倒冲洗水。

9. 发明授权

US5996595A Semiconductor wafer cleaning system 失效
标题翻译：半导体晶圆清洗系统
公开(公告)号：US5996595A
公开(公告)日：1999-12-07
申请号：US908345
申请日：1997-08-07
申请人： Michael B. Olesen , Mario E. Bran
发明人： Michael B. Olesen , Mario E. Bran
IPC分类号： B08B3/12 , C11D3/39 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , B08B3/08
CPC分类号： H01L21/02052 , B08B3/12 , C11D11/0047 , C11D11/007 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S134/902 , Y10S438/906
摘要： Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
摘要翻译：将半导体晶片定位在清洗槽中并经受从罐的下端喷射并允许在上端溢出的一个或多个高度稀释的清洁溶液的顺序流动。一种溶液包括一部分氢氧化铵，两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。第一个溶液倾倒后，冲洗水流过罐。第二种溶液包括高度稀释的氢氟酸。第三个解决方案比第一个解决方案更稀。第四种溶液含有用去离子水大大稀释的盐酸。清洗槽在其下部设有兆声波发生器，用于选择性地应用兆声波能量。罐底快速排放阀能够快速倾倒溶液，然后进行一个或多个冲洗步骤，包括在喷涂时快速补充，然后倾倒冲洗水。

10. 发明申请

US20080029125A1 Method and apparatus for damage-free, single wafer, sonic boundary layer, megasonic cleaning 审中-公开
标题翻译：用于无损，单晶片，声波边界层，超声波清洗的方法和装置
公开(公告)号：US20080029125A1
公开(公告)日：2008-02-07
申请号：US11888598
申请日：2007-07-31
申请人： Michael B. Olesen , Kenneth C. Struven , Paul Mendes
发明人： Michael B. Olesen , Kenneth C. Struven , Paul Mendes
IPC分类号： B08B3/12
CPC分类号： B08B3/12 , H01L21/67051 , H01L21/67057
摘要： A method and apparatus for megasonic cleaning of semiconductor wafers. The wafer is positioned so that the surface to be cleansed is parallel to and faces the radiating surface of a quartz or similar resonator which receives sonic waves through a liquid medium from a transducer. The sonic waves striking the wafer are preferably at about a 5° to 30° offset angle from a normally directed wave to the plane of the wafer. The layered medium is gasified and serves to couple the transducer to the resonator. A layer of degasified cleaning fluid is positioned between the resonator and the wafer.
摘要翻译：用于半导体晶片的超声波清洗的方法和装置。晶片被定位成使得被清洁的表面平行于石英或类似谐振器的辐射表面，该石英或类似谐振器通过来自换能器的液体介质接收声波。撞击晶片的声波优选地与正常定向的波到晶片的平面大约5°至30°的偏移角。分层介质被气化并用于将换能器耦合到谐振器。一层脱气的清洗液位于谐振器和晶片之间。

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