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1. 发明申请

US20100128748A1 MONITORING METHOD AND DEVICE FOR MONITORING A FORWARD VOLTAGE OF A LASER DIODE IN A LASER DIODE DRIVER INTEGRATED CIRCUIT (IC) 失效
标题翻译：用于监测激光二极管驱动器集成电路（IC）中的激光二极管的向前电压的监视方法和装置
公开(公告)号：US20100128748A1
公开(公告)日：2010-05-27
申请号：US12277625
申请日：2008-11-25
申请人： Michael A. Robinson , Laura Giovane , An-Nien Cheng
发明人： Michael A. Robinson , Laura Giovane , An-Nien Cheng
IPC分类号： H01S5/06
CPC分类号： H01S5/06808
摘要： A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.
摘要翻译：发射器或收发器的激光二极管驱动器IC提供有用于监视发射器或收发器的激光二极管或激光二极管的正向电压的电路，以使得能够实时地评估激光二极管的健康。

2. 发明授权

US07899098B2 Monitoring method and device for monitoring a forward voltage of a laser diode in a laser diode driver integrated circuit (IC) 失效
标题翻译：用于监测激光二极管驱动器集成电路（IC）中的激光二极管的正向电压的监视方法和装置
公开(公告)号：US07899098B2
公开(公告)日：2011-03-01
申请号：US12277625
申请日：2008-11-25
申请人： Michael A. Robinson , Laura Giovane , An-Nien Cheng
发明人： Michael A. Robinson , Laura Giovane , An-Nien Cheng
IPC分类号： H01S3/00
CPC分类号： H01S5/06808
摘要： A laser diode driver IC of a transmitter or transceiver is provided with circuitry for monitoring the forward voltage of the laser diode or laser diodes of the transmitter or transceiver to enable the health of the laser diode or diodes to be assessed in real-time.
摘要翻译：发射器或收发器的激光二极管驱动器IC提供有用于监视发射器或收发器的激光二极管或激光二极管的正向电压的电路，以使激光二极管或二极管的健康状况得以实时评估。

3. 发明授权

US07092425B1 VCSEL device with improved modal properties 有权
标题翻译：具有改善模态特性的VCSEL器件
公开(公告)号：US07092425B1
公开(公告)日：2006-08-15
申请号：US09680726
申请日：2000-10-05
申请人： Richard P. Schneider , Frank H. Peters , An-Nien Cheng , Laura Giovane , Hao-chung Kuo , Sheila K. Mathis
发明人： Richard P. Schneider , Frank H. Peters , An-Nien Cheng , Laura Giovane , Hao-chung Kuo , Sheila K. Mathis
IPC分类号： H01S5/183
CPC分类号： H01S5/18391 , H01S5/0207 , H01S5/18327 , H01S5/18338 , H01S5/3203 , H01S2301/18
摘要： Using lateral physical modulation, the optical properties of VCSELs can be stabilized and controlled by spatially varying the characteristics of the device material. This results in stabilization of the linewidth, the numerical aperture, the near and far field, as a function of bias and temperature. A VCSEL includes a substrate, an active region sandwiched between an upper and lower distributed Bragg reflector (DBRs), and electrical contacts. A light emission property e.g. the index of refraction, may be varied by patterning or texturing the surface of the substrate prior to growth of the epitaxial DBR layers or at least one layer of either the upper or lower DBRs, or by inserting a non-planar layer.
摘要翻译：通过使用横向物理调制，可以通过空间变化器件材料的特性来稳定和控制VCSEL的光学性质。这导致线宽，数值孔径，近场和远场的稳定，作为偏置和温度的函数。 VCSEL包括衬底，夹在上和下分布布拉格反射器（DBR）之间的有源区和电触点。发光特性例如折射率可以通过在外延DBR层或至少一层上DBR或下DBR的生长之前图案化或纹理化衬底的表面而改变，或者通过插入非平面层来改变。

4. 发明申请

US20050089074A1 Single-mode vertical cavity surface emitting lasers and methods of making the same 失效
标题翻译：单模垂直腔表面发射激光器及其制作方法
公开(公告)号：US20050089074A1
公开(公告)日：2005-04-28
申请号：US10694290
申请日：2003-10-27
申请人： Bernhard Koelle , Laura Giovane , Scott Corzine , An-Nien Chang
发明人： Bernhard Koelle , Laura Giovane , Scott Corzine , An-Nien Chang
IPC分类号： H01S5/183 , H01S5/00 , H01S5/065 , H01S5/20 , H01S5/42
CPC分类号： H01S5/18327 , H01S5/18308 , H01S5/2063 , H01S2301/163
摘要： In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.
摘要翻译：在一个方面，垂直腔表面发射激光器（VCSEL）可操作以产生工作波长的单模激光。 VCSEL包括发光表面和单片纵向堆叠结构。纵向堆叠结构包括第一反射镜，第二反射镜和空腔区域。空腔区域设置在第一反射镜和第二反射镜之间，并且包括有源光产生区域和空腔延伸区域。纵向堆叠结构还包括离子注入电流限制区域。还描述了并入上述VCSEL的VCSEL阵列和制造上述VCSEL的方法。

5. 发明授权

US07929588B2 Semiconductor devices and methods for generating light 有权
标题翻译：用于产生光的半导体器件和方法
公开(公告)号：US07929588B2
公开(公告)日：2011-04-19
申请号：US12359309
申请日：2009-01-24
申请人： Chen Ji , Laura Giovane
发明人： Chen Ji , Laura Giovane
IPC分类号： H01S5/00
CPC分类号： H01S5/18333 , H01S5/06226 , H01S5/18308 , H01S5/18311 , H01S5/2063
摘要： Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.
摘要翻译：发明并公开了半导体器件和半导体器件中的光的产生方法。该方法包括以下步骤：形成垂直腔表面发射激光器，其包括有源区和氧化物层，所述有源区与氧化物层分离并且被配置为响应于注入的电流而产生光，并且在邻近和在其下方引入注入层氧化物层以将注入的电流限制在电荷载流子组合的器件的区域以产生光。半导体器件包括在氧化物层和有源区之间的注入层。注入层防止横向泄漏电流离开电荷载体组合的器件的区域以产生光。

6. 发明授权

US07218660B2 Single-mode vertical cavity surface emitting lasers and methods of making the same 失效
标题翻译：单模垂直腔表面发射激光器及其制作方法
公开(公告)号：US07218660B2
公开(公告)日：2007-05-15
申请号：US10694290
申请日：2003-10-27
申请人： Bernhard Ulrich Koelle , Scott W. Corzine , Laura Giovane , An-Nien Chang
发明人： Bernhard Ulrich Koelle , Scott W. Corzine , Laura Giovane , An-Nien Chang
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/18327 , H01S5/18308 , H01S5/2063 , H01S2301/163
摘要： In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.
摘要翻译：在一个方面，垂直腔表面发射激光器（VCSEL）可操作以产生工作波长的单模激光。 VCSEL包括发光表面和单片纵向堆叠结构。纵向堆叠结构包括第一反射镜，第二反射镜和空腔区域。空腔区域设置在第一反射镜和第二反射镜之间，并且包括有源光产生区域和空腔延伸区域。纵向堆叠结构还包括离子注入电流限制区域。还描述了并入上述VCSEL的VCSEL阵列和制造上述VCSEL的方法。

7. 发明申请

US20100189147A1 Semiconductor Devices and Methods for Generating Light 有权
标题翻译：半导体器件及其发光方法
公开(公告)号：US20100189147A1
公开(公告)日：2010-07-29
申请号：US12359309
申请日：2009-01-24
申请人： Chen Ji , Laura Giovane
发明人： Chen Ji , Laura Giovane
IPC分类号： H01S5/026 , H01L21/00 , H01S5/125
CPC分类号： H01S5/18333 , H01S5/06226 , H01S5/18308 , H01S5/18311 , H01S5/2063
摘要： Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light.
摘要翻译：发明并公开了半导体器件和半导体器件中的光的产生方法。该方法包括以下步骤：形成垂直腔表面发射激光器，其包括有源区和氧化物层，所述有源区与氧化物层分离并且被配置为响应于注入的电流而产生光，并且在邻近和在其下方引入注入层氧化物层以将注入的电流限制在电荷载流子组合的器件的区域以产生光。半导体器件包括在氧化物层和有源区之间的注入层。注入层防止横向泄漏电流离开电荷载体组合的器件的区域以产生光。

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