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    • 9. 发明授权
    • Ultra-thin Si MOSFET device structure and method of manufacture
    • 超薄Si MOSFET器件结构及制造方法
    • US07247569B2
    • 2007-07-24
    • US10725848
    • 2003-12-02
    • Diane C. BoydBruce B. DorisMeikei IeongDevendra K. Sadana
    • Diane C. BoydBruce B. DorisMeikei IeongDevendra K. Sadana
    • H01L21/302
    • H01L21/28194H01L21/26533H01L21/28202H01L29/1083H01L29/49H01L29/517H01L29/518H01L29/66545H01L29/78
    • The present invention comprises a method for forming an ultra-thin channel MOSFET and the ultra-thin channel MOSFET produced therefrom. Specifically, the method comprises providing an SOI substrate having a buried insulating layer underlying an SOI layer; forming a pad stack atop the SOI layer; forming a block mask having a channel via atop the pad stack; providing a localized oxide region in the SOI layer on top of the buried insulating layer thereby thinning a portion of the SOI layer, the localized oxide region being self-aligned with the channel via; forming a gate in the channel via; removing at least the block mask; and forming source/drain extensions in the SOI layer abutting the thinned portion of the SOI layer. Providing the localized oxide region further comprises implanting oxygen dopant through the channel via into a portion of the SOI layer; and annealing the dopant to create the localized oxide region.
    • 本发明包括用于形成超薄沟道MOSFET的方法和由其制造的超薄沟道MOSFET。 具体地说,该方法包括:在SOI层的下方提供具有掩埋绝缘层的SOI衬底; 在SOI层顶上形成焊盘堆叠; 通过所述垫堆叠的顶部形成具有通道的块掩模; 在所述掩埋绝缘层的顶部上的所述SOI层中提供局部氧化物区域,从而使所述SOI层的一部分变薄,所述局部氧化物区域与所述沟道通孔自对准; 在通道通道中形成一个门; 至少去除阻挡掩模; 以及在与SOI层的薄化部分邻接的SOI层中形成源极/漏极延伸部。 提供局部氧化物区域还包括通过沟道通孔将氧掺杂剂注入到SOI层的一部分中; 并退火掺杂剂以产生局部氧化物区域。