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    • 1. 发明申请
    • PROCESS CONDITION MEASURING DEVICE
    • 工艺条件测量装置
    • US20130029433A1
    • 2013-01-31
    • US13361869
    • 2012-01-30
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony Dibiase
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony Dibiase
    • H01L21/66H05K3/30G01N27/00G01N19/00G01N33/00G01N21/00
    • H01L21/67253G03F7/70616G03F7/7085G03F7/70875Y10T29/4913
    • An instrument comprises a substrate, a plurality of sensors distributed at positions across the substrate's surface, at least one electronic processing component on the surface, electrical conductors extending across the surface and connected to the sensors and processing component, and a cover disposed over the sensors, processing component and conductors. The cover and substrate have similar material properties to a production substrate. The cover is configured to electromagnetically shield the sensors, conductors, or processing component. The instrument has approximately the same thickness and/or flatness as the production substrate. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    • 仪器包括基板,分布在基板表面上的位置处的多个传感器,表面上的至少一个电子处理部件,横跨表面延伸并连接到传感器和处理部件的电导体,以及设置在传感器 ,处理部件和导体。 覆盖物和基材与生产基材具有相似的材料性质。 盖被配置为电磁屏蔽传感器,导体或处理部件。 仪器具有与生产基底大致相同的厚度和/或平坦度。 要强调的是,提供这个摘要是为了符合要求摘要的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。
    • 2. 发明授权
    • Process condition measuring device
    • 工艺条件测量装置
    • US08104342B2
    • 2012-01-31
    • US12034041
    • 2008-02-20
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony DiBiase
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony DiBiase
    • G01D11/24
    • H01L21/67253G03F7/70616G03F7/7085G03F7/70875Y10T29/4913
    • An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors.
    • 用于测量参数的仪器包括基板,由基板的表面承载并分布在多个基板表面上的单独测量不同位置处的参数的多个传感器,由基板表面承载的电子处理部件,跨越表面连接的电导体 传感器和电子处理部件,以及设置在传感器,电子处理部件和导体上的盖子。 盖和基底与由基板处理单元处理的生产基板具有相似的材料特性。 仪器具有与生产基底大致相同的厚度和/或平坦度。 仪器可以经受衬底工艺,并且可以在过程期间用仪器测量一个或多个参数。 可以基于用一个或多个传感器进行的参数的测量来表征生产晶片在衬底工艺中的行为。
    • 3. 发明申请
    • PROCESS CONDITION MEASURING DEVICE
    • 工艺条件测量装置
    • US20090056441A1
    • 2009-03-05
    • US12034041
    • 2008-02-20
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony DiBiase
    • Mei H. SunMark WiltseWayne G. RenkenZachary ReidTony DiBiase
    • G01D11/00H01L21/66
    • H01L21/67253G03F7/70616G03F7/7085G03F7/70875Y10T29/4913
    • An instrument for measuring a parameter comprises a substrate, a plurality of sensors carried by and distributed across a surface of the substrate that individually measure the parameter at different positions, an electronic processing component carried by the substrate surface, electrical conductors extending across the surface connected to the sensors and the electronic processing component, and a cover disposed over the sensors, electronic processing component and conductors. The cover and substrate have similar material properties to a production substrate processed by a substrate processing cell. The instrument has approximately the same thickness and/or flatness as the production substrate. The instrument may be subjected a substrate process and one or more parameters may be measured with the instrument during the process. The behavior of a production wafer in the substrate process may be characterized based on measurements of the parameters made with the one or more sensors.
    • 用于测量参数的仪器包括基板,由基板的表面承载并分布在多个基板表面上的单独测量不同位置处的参数的多个传感器,由基板表面承载的电子处理部件,跨越表面连接的电导体 传感器和电子处理部件,以及设置在传感器,电子处理部件和导体上的盖子。 盖和基底与由基板处理单元处理的生产基板具有相似的材料特性。 仪器具有与生产基底大致相同的厚度和/或平坦度。 仪器可以经受衬底工艺,并且可以在过程期间用仪器测量一个或多个参数。 可以基于用一个或多个传感器进行的参数的测量来表征生产晶片在衬底工艺中的行为。