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1. 发明授权

US5131046A High fidelity hearing aid amplifier 失效
标题翻译：高清晰度助听放大器
公开(公告)号：US5131046A
公开(公告)日：1992-07-14
申请号：US431531
申请日：1989-11-03
申请人： Mead C. Killion , Norman P. Matzen , Clyde M. Brown, Jr. , William A. Cole , James B. Compton , Steven J. Iseberg , Jonathan K. Stewart , Donald L. Wilson
发明人： Mead C. Killion , Norman P. Matzen , Clyde M. Brown, Jr. , William A. Cole , James B. Compton , Steven J. Iseberg , Jonathan K. Stewart , Donald L. Wilson
IPC分类号： H03F3/45 , H03G3/02 , H03G9/18 , H04R25/00
CPC分类号： H04R25/502 , H03G9/18 , H04R2460/03 , H04R25/356
摘要： A high fidelity hearing aid amplifier is operable at a very low battery voltage and includes a single integrated circuit chip which provides a variable gain amplifier and gain control circuitry operative at low signal levels to enhance gain at higher frequencies relative to gain at lower frequencies, such circuitry including a logarithmic rectifier arrangement and a peak detector in a compression ratio control circuit. Operation at a low battery voltage is enhanced through a compression ratio control circuit which provides a level shift between an AC output of the logarithmic rectifier arrangement and the peak detector. Current mirrors are provided to obtained balanced and stable operation, and an arrangement is provided for manual control by a user to obtain an optimum response characteristic.
摘要翻译：高保真助听器放大器可在非常低的电池电压下工作，并且包括单个集成电路芯片，其提供可变增益放大器和在低信号电平下操作的增益控制电路，以相对于较低频率的增益来增强在较高频率处的增益，包括压缩比控制电路中的对数整流器布置和峰值检测器的电路。通过压缩比控制电路来提高在低电池电压下的操作，该压缩比控制电路在对数整流器装置的AC输出和峰值检测器之间提供电平移位。提供电流镜以获得平衡和稳定的操作，并且提供用于用户手动控制以获得最佳响应特性的布置。

2. 发明授权

US4951101A Diamond shorting contact for semiconductors 失效
标题翻译：半导体的金刚石短接触点
公开(公告)号：US4951101A
公开(公告)日：1990-08-21
申请号：US236454
申请日：1988-08-25
申请人： Martin J. Alter , Clyde M. Brown, Jr. , James B. Compton
发明人： Martin J. Alter , Clyde M. Brown, Jr. , James B. Compton
IPC分类号： H01L23/485 , H01L29/41
CPC分类号： H01L23/485 , H01L29/41 , H01L2924/0002 , Y10S257/914
摘要： A diamond-shaped short contact overlapping two differing conductivity regions in a semiconductor. The shape and orientation providing maximum alignment tolerances for a given size of contact opening.
摘要翻译：在半导体中重叠两个不同导电区域的菱形短接触。形状和方向为给定尺寸的接触开口提供最大的对准公差。

3. 发明授权

US5034346A Method for forming shorting contact for semiconductor which allows for relaxed alignment tolerance 失效
标题翻译：用于形成用于半导体的短路接触的方法，其允许放宽的取向公差
公开(公告)号：US5034346A
公开(公告)日：1991-07-23
申请号：US553098
申请日：1990-07-13
申请人： Martin J. Alter , Clyde M. Brown, Jr. , James B. Compton
发明人： Martin J. Alter , Clyde M. Brown, Jr. , James B. Compton
IPC分类号： H01L23/485 , H01L29/41
CPC分类号： H01L23/485 , H01L29/41 , H01L2924/0002 , Y10S148/026 , Y10S148/102
摘要： A method is disclosed for forming a shorting contact for shorting P-type and N-type conductivity regions in a semiconductor together. In one embodiment of this method, the P-type region is substantially a square and is surrounded by the N-type region. A substantially square contact opening is made to expose the P-type region and a portion of the N-type region. Sides of the contact opening are formed to be at substantially 45 degree angles with respect to sides of the substantially square P-type region. In this manner, the alignment tolerance for forming the contact opening is less critical than if the sides of the contact opening were parallel to the sides of the P-type region. The contact opening is then filled with a conductive material to electrically short the P-type region to the N-type region. The conductivity types in this example may be reversed.
摘要翻译：公开了一种用于形成用于使半导体中的P型和N型导电性区域短路化的短接触点的方法。在该方法的一个实施例中，P型区域基本上是正方形并被N型区域包围。使基本上为方形的接触开口露出P型区域和N型区域的一部分。接触开口的侧面相对于大致正方形的P型区域的侧面形成为大致45度的角度。以这种方式，用于形成接触开口的对准公差不如接触开口的侧面平行于P型区域的侧面那么重要。然后用导电材料填充接触开口以将P型区域电气地短路至N型区域。本实施例中的导电类型可以颠倒。

4. 发明授权

US4224631A Semiconductor voltage reference device 失效
标题翻译：半导体参考电压
公开(公告)号：US4224631A
公开(公告)日：1980-09-23
申请号：US954390
申请日：1978-10-25
申请人： Earl C. Vickery , James C. Schmoock , Clyde M. Brown, Jr.
发明人： Earl C. Vickery , James C. Schmoock , Clyde M. Brown, Jr.
IPC分类号： G05F3/18 , H01L29/866 , H01L29/90
CPC分类号： G05F3/18 , H01L29/866
摘要： A semiconductor voltage reference device formed by ion implanting particles into a semiconductor body having first and second doped regions of opposite type conductivity formed therein. Such particles are implanted with a peak concentration at a predetermined depth from a surface of the body, providing a third region of conductivity type opposite that of the first region and having a doping concentration greater than that of the second region. The particles extend beneath the surface of the body into the first and second regions, a junction being formed between the first and third regions beneath the surface of the body. Electrodes are provided in ohmic contact with the first and second doped regions. When the junction is reverse biased by applying a proper voltage across the electrodes the junction breaks down beneath the surface of the body establishing a fixed or reference voltage between the electrodes.
摘要翻译：通过将颗粒离子注入半导体本体中形成的半导体参考装置，其具有形成在其中的相对导电型的第一和第二掺杂区域。这样的颗粒以距身体表面的预定深度的峰值浓度注入，提供与第一区域相反的第三导电类型区域，并且具有大于第二区域的掺杂浓度的掺杂浓度。颗粒在主体的表面下方延伸到第一和第二区域中，在主体表面下方的第一和第三区域之间形成结。电极与第一和第二掺杂区域欧姆接触地提供。当通过在电极之间施加适当的电压来反向偏置接合点时，接头在主体表面下方破裂，在电极之间建立固定或参考电压。

5. 发明授权

US4308467A Electronic circuitry 失效
标题翻译：电子电路
公开(公告)号：US4308467A
公开(公告)日：1981-12-29
申请号：US90813
申请日：1979-11-02
申请人： M. V. Kolluri , Clyde M. Brown, Jr.
发明人： M. V. Kolluri , Clyde M. Brown, Jr.
IPC分类号： H03M1/00 , H03K3/353
CPC分类号： H03M1/785
摘要： An electronic circuit, suitable for use in a digital-to-analog converter, wherein a ladder network is provided to obtain a 2:1 successive reduction in the amount of current flow through successive shunt arms of the ladder network. The ladder network includes a plurality of serially coupled resistance means, at least a portion thereof comprising a resistor and a serially coupled transistor, and a plurality of shunt coupled resistors disposed in the shunt arms of the ladder network. A plurality of pairs of switching transistors, each pair thereof being adapted for coupling to a pair of complmentary switching signals produced in response to a bit of the digital word being converted, each one of the shunt resistors being coupled to a corresponding one of the pairs of switching transistors.
摘要翻译：一种适用于数模转换器的电子电路，其中提供梯形网络以获得通过梯形网络的连续分流臂的电流量的连续减少2:1。梯形网络包括多个串联电阻装置，其至少其一部分包括电阻器和串联耦合晶体管，以及设置在梯形网络的分流臂中的多个分流耦合电阻器。多对开关晶体管，其每一对适于耦合到响应于被转换的数字字的位而产生的一对补充的开关信号，每个分流电阻器耦合到相应的一对的开关晶体管。

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