专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120293909A1 HIGH DIELECTRIC FILM 审中-公开
标题翻译：高介电膜
公开(公告)号：US20120293909A1
公开(公告)日：2012-11-22
申请号：US13522442
申请日：2011-01-11
申请人： Mayuko Tatemichi , Nanako Takano , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Mayuko Tatemichi , Nanako Takano , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： C08L27/16 , C08K3/22 , C08L1/00 , H01G4/30
CPC分类号： H01B3/445 , C08J5/18 , C08J2327/16 , H01G4/1209 , H01G4/1254 , H01G4/18 , H01G4/186 , H01G4/20 , H01G4/206
摘要： The present invention provides a high dielectric film comprising: a film-forming resin (A); and inorganic particles (B), wherein the film-forming resin (A) contains a vinylidene fluoride resin (a1), an amount of the inorganic particles (B) is not less than 0.01 parts by mass and less than 10 parts by mass for each 100 parts by mass of the film-forming resin (A), and the inorganic oxide particles (B) is at least one selected from the group consisting of: (B1) inorganic oxide particles of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table, or inorganic oxide composite particles of these; (B2) inorganic composite oxide particles represented by formula (1): M1a1Nb1Oc1 wherein M1 represents a metallic element of Group 2, N represents a metallic element of Group 4, a1 represents 0.9 to 1.1, b1 represents 0.9 to 1.1, c1 represents 2.8 to 3.2, and the numbers of M1 and N each may be more than 1; and (B3) inorganic oxide composite particles of an oxide of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table and silicon oxide. The film has improved volume resistivity while maintaining a high dielectric constant owing to a VdF resin.
摘要翻译：本发明提供一种高介电膜，包括：成膜树脂（A）; 和无机粒子（B），其中，成膜树脂（A）含有偏二氟乙烯树脂（a1），无机粒子（B）的量为0.01质量份以上且小于10质量份，对于每100质量份成膜树脂（A）和无机氧化物颗粒（B）是选自以下组中的至少一种：（B1）第2,3组金属元素的无机氧化物颗粒， 4,12或13，或这些的无机氧化物复合颗粒; （B2）式（1）表示的无机复合氧化物颗粒：M1a1Nb1Oc1其中M1表示第2族的金属元素，N表示第4族的金属元素，a1表示0.9〜1.1，b1表示0.9〜1.1，c1表示2.8〜 3.2，M1和N的数量可能大于1; 和（B3）元素周期表第2,3,4,12或13族金属元素的氧化物的无机氧化物复合颗粒和氧化硅。该膜具有改善的体积电阻率，同时由于VdF树脂而保持高的介电常数。

2. 发明授权

US08675345B2 Film for film capacitor and film capacitor 失效
标题翻译：薄膜电容器和薄膜电容器薄膜
公开(公告)号：US08675345B2
公开(公告)日：2014-03-18
申请号：US13141136
申请日：2009-12-21
申请人： Mayuko Tatemichi , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Mayuko Tatemichi , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： H01G4/08 , H01G4/06
CPC分类号： H01G4/203 , H01G4/206 , Y10T428/31551 , Y10T428/31826 , Y10T428/31931 , Y10T428/31935
摘要： There is provided a thin highly dielectric film for a film capacitor being excellent in mechanical strength, in which highly dielectric inorganic particles can be blended to a dielectric resin at high ratio, and rubber particles (B) and preferably highly dielectric inorganic particles (C) are dispersed in a thermoplastic resin (A).
摘要翻译：提供了一种用于薄膜电容器的薄的高介电膜，其具有优异的机械强度，其中高电介质无机颗粒可以以高比率混合到电介质树脂中，并且橡胶颗粒（B），优选高介电性无机颗粒（C）分散在热塑性树脂（A）中。

3. 发明申请

US20110255210A1 FILM FOR FILM CAPACITOR AND FILM CAPACITOR 失效
标题翻译：薄膜电容器和薄膜电容器薄膜
公开(公告)号：US20110255210A1
公开(公告)日：2011-10-20
申请号：US13141136
申请日：2009-12-21
申请人： Mayuko Tatemichi , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Mayuko Tatemichi , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： H01G4/06 , B32B25/12 , B32B25/14 , B32B25/18 , C08K3/22 , C08L83/07 , C08L27/16 , C08L33/20 , C08L33/12 , B32B25/20 , B32B25/16
CPC分类号： H01G4/203 , H01G4/206 , Y10T428/31551 , Y10T428/31826 , Y10T428/31931 , Y10T428/31935
摘要： There is provided a thin highly dielectric film for a film capacitor being excellent in mechanical strength, in which highly dielectric inorganic particles can be blended to a dielectric resin at high ratio, and rubber particles (B) and preferably highly dielectric inorganic particles (C) are dispersed in a thermoplastic resin (A).
摘要翻译：提供了一种用于薄膜电容器的薄的高介电膜，其具有优异的机械强度，其中高电介质无机颗粒可以以高比率混合到电介质树脂中，并且橡胶颗粒（B），优选高介电性无机颗粒（C）分散在热塑性树脂（A）中。

4. 发明授权

US08934216B2 Composition for forming high dielectric film for film capacitor 有权
标题翻译：用于形成薄膜电容器的高介电膜的组合物
公开(公告)号：US08934216B2
公开(公告)日：2015-01-13
申请号：US13141274
申请日：2009-12-21
申请人： Kouji Yokotani , Miharu Ota , Mayuko Tatemichi , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Kouji Yokotani , Miharu Ota , Mayuko Tatemichi , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： H01G4/08 , C08L27/16
CPC分类号： H01G4/206 , C08K9/04 , C09D127/16 , H01G4/1218 , Y10T428/31678
摘要： The present invention provides a high dielectric film for a film capacitor obtained by molding a film forming composition for a film capacitor comprising a thermoplastic resin (A) and surface-treated high dielectric inorganic particles (B) obtained by treating the surfaces of high dielectric inorganic particles (b1) having a dielectric constant (20° C., 1 kHz) of 100 or more with a low dielectric compound (b2) having a dielectric constant (20° C., 1 kHz) of 10 or less. This high dielectric film for a film capacitor can restrain the decrease of electrical insulating property, in spite of the high dielectric inorganic particles being dispersed at a high filling rate.
摘要翻译：本发明提供了一种用于薄膜电容器的高介电膜，该薄膜电容器通过模制一种薄膜电容器成膜组合物，该薄膜电容器包括热塑性树脂（A）和经表面处理的高介电无机颗粒（B）具有介电常数（20℃，1kHz）为10以下的低介电常数（b2）的介电常数（20℃，1kHz）为100以上的粒子（b1）。这种用于薄膜电容器的高介电膜可以抑制电绝缘性的降低，尽管高介电无机颗粒以高填充率分散。

5. 发明申请

US20110249374A1 COMPOSITION FOR FORMING HIGH DIELECTRIC FILM FOR FILM CAPACITOR 有权
标题翻译：用于形成用于膜电容器的高介电膜的组合物
公开(公告)号：US20110249374A1
公开(公告)日：2011-10-13
申请号：US13141274
申请日：2009-12-21
申请人： Kouji Yokotani , Miharu Ota , Mayuko Tatemichi , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Kouji Yokotani , Miharu Ota , Mayuko Tatemichi , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： H01G4/08 , C08K5/5415 , B32B15/04 , C08K5/521 , C08L27/16 , C08K5/524 , C08K5/101
CPC分类号： H01G4/206 , C08K9/04 , C09D127/16 , H01G4/1218 , Y10T428/31678
摘要： The present invention provides a high dielectric film for a film capacitor obtained by molding a film forming composition for a film capacitor comprising a thermoplastic resin (A) and surface-treated high dielectric inorganic particles (B) obtained by treating the surfaces of high dielectric inorganic particles (b1) having a dielectric constant (20° C., 1 kHz) of 100 or more with a low dielectric compound (b2) having a dielectric constant (20° C., 1 kHz) of 10 or less. This high dielectric film for a film capacitor can restrain the decrease of electrical insulating property, in spite of the high dielectric inorganic particles being dispersed at a high filling rate.
摘要翻译：本发明提供了一种用于薄膜电容器的高介电膜，该薄膜电容器通过模制一种薄膜电容器成膜组合物，该薄膜电容器包括热塑性树脂（A）和经表面处理的高介电无机颗粒（B）具有介电常数（20℃，1kHz）为10以下的低介电常数（b2）的介电常数（20℃，1kHz）为100以上的粒子（b1）。这种用于薄膜电容器的高介电膜可以抑制电绝缘性的降低，尽管高介电无机颗粒以高填充率分散。

6. 发明授权

US08576540B2 Coating composition for forming highly dielectric film and highly dielectric film 有权
标题翻译：用于形成高介电膜和高介电膜的涂料组合物
公开(公告)号：US08576540B2
公开(公告)日：2013-11-05
申请号：US12933341
申请日：2009-03-17
申请人： Meiten Koh , Mayuko Tatemichi , Eri Mukai , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu
发明人： Meiten Koh , Mayuko Tatemichi , Eri Mukai , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu
IPC分类号： H01G4/08 , H01G4/06
CPC分类号： H01G4/18 , H01B3/185 , H01B3/445 , H01G4/14 , H01G4/206
摘要： The present invention provides a nonporous highly dielectric film which can improve withstanding voltage, insulating property and dielectric constant, especially can decrease a dielectric loss at high temperatures and can be made thin, and a coating composition for forming the highly dielectric film comprising (A) a vinylidene fluoride resin, (B) a cellulose resin and (C) a solvent.
摘要翻译：本发明提供一种能够提高耐压，绝缘性和介电常数的无孔高电介质膜，特别是可以降低高温下的介电损耗，并且可以变薄;以及用于形成高介电膜的涂料组合物，其包含（A）偏氟乙烯树脂，（B）纤维素树脂和（C）溶剂。

7. 发明申请

US20110013343A1 COATING COMPOSITION FOR FORMING HIGHLY DIELECTRIC FILM AND HIGHLY DIELECTRIC FILM 有权
标题翻译：用于形成高介电膜和高介电膜的涂料组合物
公开(公告)号：US20110013343A1
公开(公告)日：2011-01-20
申请号：US12933341
申请日：2009-03-17
申请人： Meiten Koh , Mayuko Tatemichi , Eri Mukai , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu
发明人： Meiten Koh , Mayuko Tatemichi , Eri Mukai , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu
IPC分类号： H01G4/18 , C08L1/02 , C08L1/12 , B29C39/02
CPC分类号： H01G4/18 , H01B3/185 , H01B3/445 , H01G4/14 , H01G4/206
摘要： The present invention provides a nonporous highly dielectric film which can improve withstanding voltage, insulating property and dielectric constant, especially can decrease a dielectric loss at high temperatures and can be made thin, and a coating composition for forming the highly dielectric film comprising (A) a vinylidene fluoride resin, (B) a cellulose resin and (C) a solvent.
摘要翻译：本发明提供一种能够提高耐压，绝缘性和介电常数的无孔高电介质膜，特别是可以降低高温下的介电损耗，并且可以变薄;以及用于形成高介电膜的涂料组合物，其包含（A）偏氟乙烯树脂，（B）纤维素树脂和（C）溶剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式