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1. 发明申请

US20130176766A1 STATEFUL NEGATIVE DIFFERENTIAL RESISTANCE DEVICES 有权
标题翻译：强大的负极差分电阻器件
公开(公告)号：US20130176766A1
公开(公告)日：2013-07-11
申请号：US13346219
申请日：2012-01-09
申请人： Matthew D. Pickett , Frederick A. Perner , R. Stanley Williams
发明人： Matthew D. Pickett , Frederick A. Perner , R. Stanley Williams
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0069 , G11C11/39 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L47/00
摘要： A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.
摘要翻译：有状态的负差分电阻装置包括第一导电电极和第二导电电极。该装置还包括具有基于所施加的电能而改变的可逆非易失性电阻的第一材料和包括在局部活性区域中为负的差分电阻的第二材料。第一材料和第二材料夹在第一导电电极和第二导电电极之间。使用有状态NDR设备的方法包括向有状态的NDR设备应用编程能量以将状态NDR设备的状态设置为预定状态，并从有状态的NDR设备移除电力。上电能量被施加到状态NDR设备，使得状态NDR设备返回到预定状态。

2. 发明授权

US08611133B2 Stateful negative differential resistance devices 有权
标题翻译：有状态负差分电阻器件
公开(公告)号：US08611133B2
公开(公告)日：2013-12-17
申请号：US13346219
申请日：2012-01-09
申请人： Matthew D. Pickett , Frederick A. Perner , R. Stanley Williams
发明人： Matthew D. Pickett , Frederick A. Perner , R. Stanley Williams
IPC分类号： G11C11/00 , G11C13/00
CPC分类号： G11C13/0069 , G11C11/39 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L47/00
摘要： A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state.
摘要翻译：有状态的负差分电阻装置包括第一导电电极和第二导电电极。该装置还包括具有基于所施加的电能而改变的可逆非易失性电阻的第一材料和包括在局部活性区域中为负的差分电阻的第二材料。第一材料和第二材料夹在第一导电电极和第二导电电极之间。使用有状态NDR设备的方法包括向有状态的NDR设备应用编程能量以将状态NDR设备的状态设置为预定状态，并从有状态的NDR设备移除电力。上电能量被施加到状态NDR设备，使得状态NDR设备返回到预定状态。

3. 发明授权

US07242199B2 Active interconnects and control points in integrated circuits 有权
标题翻译：集成电路中的有源互连和控制点
公开(公告)号：US07242199B2
公开(公告)日：2007-07-10
申请号：US11112795
申请日：2005-04-21
申请人： R. Stanley Williams , Philip J Kuekes , Frederick A. Perner , Greg Snider , Duncan Stewart
发明人： R. Stanley Williams , Philip J Kuekes , Frederick A. Perner , Greg Snider , Duncan Stewart
IPC分类号： G01R27/08
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors are introduced at the interconnect layer of integrated circuits in order to provide a for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronic characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains.
摘要翻译：在本发明的各种实施例中，在集成电路的互连层处引入可调电阻器，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或者在制造之后配置集成电路。例如，当诸如晶体管的某些内部组件由于制造缺陷而没有指定的电子特性时，可以使用根据本发明的实施例的集成电路的互连层中包括的可调谐电阻的可变电阻的调整以调整内部电压和/或电平以便改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。

4. 发明授权

US08885422B2 Hierarchical on-chip memory 有权
标题翻译：分层片上存储器
公开(公告)号：US08885422B2
公开(公告)日：2014-11-11
申请号：US13256242
申请日：2009-06-12
申请人： Gilberto Medeiros Ribeiro , R. Stanley Williams , Matthew D. Pickett
发明人： Gilberto Medeiros Ribeiro , R. Stanley Williams , Matthew D. Pickett
IPC分类号： G11C7/00 , G11C5/06 , G11C5/02
CPC分类号： G11C5/02 , G11C5/063 , G11C2213/71
摘要： A hierarchical on-chip memory (400) includes an area distributed CMOS layer (310) comprising input/output functionality and volatile memory and via array (325, 330), the area distributed CMOS layer (310) configured to selectively address the via array (325, 330). A crossbar memory (305) overlies the area distributed CMOS layer (310) and includes programmable crosspoint devices (315) which are uniquely accessed through the via array (325, 330). A method for utilizing hierarchical on-chip memory (400) includes storing frequently rewritten data in a volatile memory and storing data which is not frequently rewritten in a non-volatile memory (305), where the volatile memory is contained within an area distributed CMOS layer (310) and the non-volatile memory (305) is formed over and accessed through the area distributed CMOS layer (310).
摘要翻译：分层片上存储器（400）包括包括输入/输出功能的区域分布式CMOS层（310）和易失性存储器和通孔阵列（325,330），所述区域分布式CMOS层（310）被配置为选择性地寻址通孔阵列（325,330）。交叉开关存储器（305）覆盖区域分布式CMOS层（310），并且包括通过通孔阵列（325,330）唯一访问的可编程交叉点设备（315）。一种用于利用分层片上存储器（400）的方法包括：将经常重写的数据存储在易失性存储器中，并将非频繁重写的数据存储在非易失性存储器（305）中，其中易失性存储器包含在区域分布式CMOS 层（310）和非易失性存储器（305）形成在区域分布式CMOS层（310）上并通过区域分布式CMOS层（310）访问。

5. 发明申请

US20140304467A1 SHIFTABLE MEMORY EMPLOYING RING REGISTERS 有权
标题翻译：可移动存储器使用环形寄存器
公开(公告)号：US20140304467A1
公开(公告)日：2014-10-09
申请号：US14349352
申请日：2011-10-27
申请人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
发明人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
IPC分类号： G11C7/10 , G06F5/08
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.
摘要翻译：可移动存储器使用振铃寄存器来移位存储在可移位存储器内的环形寄存器中的数据字的连续子集。可移位存储器包括具有内置字级移位能力的存储器。存储器包括多个用于存储数据字的环形寄存器。数据字的连续子集可在存储器内的第一位置到第二位置的多个环形寄存器的集合之间移位。数据字的连续子集具有小于存储器总大小的大小。当连续子集移位时，存储器仅移动存储在连续子集内的数据字。

6. 发明申请

US20130249879A1 Display Matrix with Resistance Switches 有权
标题翻译：带电阻开关的显示矩阵
公开(公告)号：US20130249879A1
公开(公告)日：2013-09-26
申请号：US13424776
申请日：2012-03-20
申请人： Matthew D. Pickett , R. Stanley Williams
发明人： Matthew D. Pickett , R. Stanley Williams
IPC分类号： G06F3/038
CPC分类号： G09G3/3648 , G09G3/20
摘要： A display matrix may have a resistance switch and a display element formed on a common display substrate. The resistance switch may have a metal insulator transition (MIT) material that has a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance.
摘要翻译：显示矩阵可以具有形成在公共显示基板上的电阻开关和显示元件。电阻开关可以具有呈现不连续电阻的具有负差分电阻（NDR）特性的金属绝缘体转变（MIT）材料。

7. 发明申请

US20130207069A1 METAL-INSULATOR TRANSITION SWITCHING DEVICES 审中-公开
标题翻译：金属绝缘子过渡开关装置
公开(公告)号：US20130207069A1
公开(公告)日：2013-08-15
申请号：US13880269
申请日：2010-10-21
申请人： Matthew D. Pickett , Philip J. Kuekes , R. Stanley Williams , Frederick Perner , Wei Wu , Alexandre M. Bratkovski
发明人： Matthew D. Pickett , Philip J. Kuekes , R. Stanley Williams , Frederick Perner , Wei Wu , Alexandre M. Bratkovski
IPC分类号： H01L47/02 , H01L47/00
CPC分类号： H01L47/02 , H01L47/005 , H01L49/003
摘要： A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region.
摘要翻译：金属 - 绝缘体转变开关器件包括第一电极和第二电极。包括体金属 - 绝缘体转移材料的沟道区域分离第一电极和第二电极。一种用于形成金属 - 绝缘体转变开关器件的方法包括在第一电极和第二电极之间沉积体金属 - 绝缘体转变材料层以形成沟道区并形成可操作地连接到沟道区的栅电极。

8. 发明申请

US20130099187A1 MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL 有权
标题翻译：基于负面差分电阻材料的多层结构
公开(公告)号：US20130099187A1
公开(公告)日：2013-04-25
申请号：US13281186
申请日：2011-10-25
申请人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro , Warren Jackson
发明人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro , Warren Jackson
IPC分类号： H01L45/00 , B32B3/00 , B32B9/04 , B32B3/10 , B32B17/06 , B32B15/04
CPC分类号： H01L47/00 , H01L27/26 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , Y10T428/197 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M2 disposed above the NDR material, a second layer of NDR material disposed above layer M2, and a conductive layer disposed above the second NDR layer. Layer M2 can include a conductive material interspersed with regions of a dielectric material or a layer of the dielectric material and regions of the conductive material disposed above and below the dielectric material.
摘要翻译：公开了一种多层结构，其包括导电层，设置在导电层上方的负差动电阻（NDR）材料层，设置在NDR材料上方的层M2，设置在层M2上方的NDR材料的第二层，以及导电层设置在第二NDR层之上。层M2可以包括散布有电介质材料的区域或电介质材料层的导电材料和设置在电介质材料上方和下方的导电材料的区域。

9. 发明授权

US09846565B2 Shiftable memory employing ring registers 有权
公开(公告)号：US09846565B2
公开(公告)日：2017-12-19
申请号：US14349352
申请日：2011-10-27
申请人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
发明人： Matthew D. Pickett , R. Stanley Williams , Gilberto M. Ribeiro
IPC分类号： G06F5/08 , G11C19/00 , G11C19/28 , G11C21/00 , G11C7/10
CPC分类号： G06F5/08 , G11C7/1012 , G11C7/1036 , G11C19/00 , G11C19/28 , G11C21/00
摘要： Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

10. 发明授权

US08854860B2 Metal-insulator transition latch 有权
标题翻译：金属 - 绝缘体转换闩锁
公开(公告)号：US08854860B2
公开(公告)日：2014-10-07
申请号：US13362538
申请日：2012-01-31
申请人： Gilberto Medeiros Ribeiro , Matthew D. Pickett , R. Stanley Williams
发明人： Gilberto Medeiros Ribeiro , Matthew D. Pickett , R. Stanley Williams
IPC分类号： G11C11/00 , H03K3/357 , H01L45/00 , G11C13/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2211/5614 , G11C2213/15 , H01L45/04 , H01L45/1233 , H03K3/357
摘要： A metal-insulator transition (MIT) latch includes a first electrode spaced apart from a second electrode and an MIT material disposed between said first and second electrodes. The MIT material comprises a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance change at a threshold voltage or threshold current. Either the first or second electrode is electrically connected to an electrical bias source regulated to set a resistance phase of the MIT material.
摘要翻译：金属 - 绝缘体转变（MIT）锁存器包括与第二电极间隔开的第一电极和设置在所述第一和第二电极之间的MIT材料。 MIT材料包括在阈值电压或阈值电流下呈现不连续电阻变化的负差分电阻（NDR）特性。第一或第二电极电连接到被调节以设定MIT材料的电阻相位的电偏压源。

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