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1. 发明申请

US20060077719A1 REPROGRAMMABLE INTEGRATED CIRCUIT (IC) WITH OVERWRITABLE NONVOLATILE STORAGE 失效
标题翻译：可重复集成电路（IC）与非易失性存储
公开(公告)号：US20060077719A1
公开(公告)日：2006-04-13
申请号：US10711819
申请日：2004-10-07
申请人： Matthew Breitwisch , Chung Lam , Steven Mittl , Jian Zhu
发明人： Matthew Breitwisch , Chung Lam , Steven Mittl , Jian Zhu
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C16/28
摘要： A reprogrammable integrated circuit (IC) including overwritable nonvolatile storage cells. Cell contents are compared in a differential sense amplifier against a variable reference signal that has a number of selectable reference levels corresponding to reprogrammed cell threshold voltages. With each write cycle the nonvolatile storage cells are overwritten and then, compared against a different, e.g., higher, selectable reference level.
摘要翻译：包括可重写非易失性存储单元的可重复编程集成电路（IC）。在差分读出放大器中将单元内容与可变参考信号进行比较，该可变参考信号具有对应于重新编程的单元阈值电压的多个可选参考电平。在每个写周期中，非易失性存储单元被覆盖，然后与不同的，例如更高的可选参考电平进行比较。

2. 发明授权

US07123517B2 Reprogrammable integrated circuit (IC) with overwritable nonvolatile storage 失效
标题翻译：具有可重写非易失性存储的可重复编程集成电路（IC）
公开(公告)号：US07123517B2
公开(公告)日：2006-10-17
申请号：US10711819
申请日：2004-10-07
申请人： Matthew Breitwisch , Chung H. Lam , Steven Mittl , Jian W. Zhu
发明人： Matthew Breitwisch , Chung H. Lam , Steven Mittl , Jian W. Zhu
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/10 , G11C16/28
摘要： A reprogrammable integrated circuit (IC) including overwritable nonvolatile storage cells. Cell contents are compared in a differential sense amplifier against a variable reference signal that has a number of selectable reference levels corresponding to reprogrammed cell threshold voltages. With each write cycle the nonvolatile storage cells are overwritten and then, compared against a different, e.g., higher, selectable reference level.
摘要翻译：包括可重写非易失性存储单元的可重复编程集成电路（IC）。在差分读出放大器中将单元内容与可变参考信号进行比较，该可变参考信号具有对应于重新编程的单元阈值电压的多个可选参考电平。在每个写入周期中，非易失性存储单元被覆盖，然后与不同的，例如更高的可选参考电平进行比较。

3. 发明申请

US20070246748A1 Phase change memory cell with limited switchable volume 失效
标题翻译：相变容量有限的相变存储单元
公开(公告)号：US20070246748A1
公开(公告)日：2007-10-25
申请号：US11410466
申请日：2006-04-25
申请人： Matthew Breitwisch , Chung Lam , Jan Philipp , Stephen Rossnagel , Alejandro Schrott
发明人： Matthew Breitwisch , Chung Lam , Jan Philipp , Stephen Rossnagel , Alejandro Schrott
IPC分类号： H01L29/768
CPC分类号： H01L45/144 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1625 , H01L45/1666
摘要： A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.
摘要翻译：存储单元包括介电层和相变材料。电介质层限定了具有宽部分和窄部分的沟槽。狭窄部分基本上比宽部分窄。相变材料又至少部分地填充沟槽的宽而窄的部分。此外，沟槽狭窄部分内的相变材料限定了空隙。通过向存储单元施加切换电流的脉冲来加热相变材料，可以将数据存储在存储单元中。有利地，本发明的实施例提供高开关电流密度和加热效率，从而可以减小开关电流脉冲的幅度。

4. 发明申请

US20060027889A1 Isolated fully depleted silicon-on-insulator regions by selective etch 失效
标题翻译：通过选择性蚀刻隔离完全耗尽的绝缘体上硅区域
公开(公告)号：US20060027889A1
公开(公告)日：2006-02-09
申请号：US10710821
申请日：2004-08-05
申请人： Matthew Breitwisch , Chung Lam , Randy Mann , Dale Martin
发明人： Matthew Breitwisch , Chung Lam , Randy Mann , Dale Martin
IPC分类号： H01L29/06 , H01L21/76
CPC分类号： H01L21/764 , H01L21/76283 , H01L21/76289 , H01L29/78654
摘要： The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential doped portion in the semiconducting regions underlying an upper Si-containing surface of the semiconducting regions; forming a trench in the substrate including the semiconducting regions and the insulating regions; removing the etch differential doped portion from the semiconductor regions to produce a cavity underlying the upper surface of the semiconducting regions; and filling the trench with a trench dielectric, wherein the trench dielectric material encloses the cavity underlying the upper Si-containing surface of the semiconducting regions. The upper Si-containing surface of the semiconducting regions has a uniform thickness of less than about 100 Å.
摘要翻译：本发明提供一种形成超薄且均匀的Si层的方法，包括以下步骤：提供具有由绝缘区分隔开的半导体区域的衬底; 将掺杂剂注入衬底中以在半导体区域的上部含Si表面下方的半导体区域中提供蚀刻差分掺杂部分; 在包括半导体区域和绝缘区域的衬底中形成沟槽; 从所述半导体区域移除所述蚀刻差分掺杂部分以产生位于所述半导体区域的上表面下方的空腔; 以及用沟槽电介质填充所述沟槽，其中所述沟槽电介质材料包围在所述半导体区域的所述上部含Si表面下面的空腔。半导体区域的上部含Si表面具有小于约的均匀厚度。

5. 发明申请

US20070128776A1 ISOLATED FULLY DEPLETED SILICON-ON-INSULATOR REGIONS BY SELECTIVE ETCH 审中-公开
标题翻译：通过选择性蚀刻分离完全绝缘的绝缘体绝缘体区域
公开(公告)号：US20070128776A1
公开(公告)日：2007-06-07
申请号：US11670262
申请日：2007-02-01
申请人： Matthew Breitwisch , Chung Lam , Randy Mann , Dale Martin
发明人： Matthew Breitwisch , Chung Lam , Randy Mann , Dale Martin
IPC分类号： H01L21/84 , H01L27/12 , H01L29/00
CPC分类号： H01L21/764 , H01L21/76283 , H01L21/76289 , H01L29/78654
摘要： The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential doped portion in the semiconducting regions underlying an upper Si-containing surface of the semiconducting regions; forming a trench in the substrate including the semiconducting regions and the insulating regions; removing the etch differential doped portion from the semiconductor regions to produce a cavity underlying the upper surface of the semiconducting regions; and filling the trench with a trench dielectric, wherein the trench dielectric material encloses the cavity underlying the upper Si-containing surface of the semiconducting regions. The upper Si-containing surface of the semiconducting regions has a uniform thickness of less than about 100 Å.
摘要翻译：本发明提供一种形成超薄且均匀的Si层的方法，包括以下步骤：提供具有由绝缘区分隔开的半导体区域的衬底; 将掺杂剂注入衬底中以在半导体区域的上部含Si表面下方的半导体区域中提供蚀刻差分掺杂部分; 在包括半导体区域和绝缘区域的衬底中形成沟槽; 从所述半导体区域去除所述蚀刻差分掺杂部分以在所述半导体区域的上表面下方形成空腔; 以及用沟槽电介质填充所述沟槽，其中所述沟槽电介质材料包围在所述半导体区域的所述上部含Si表面之下的空腔。半导体区域的上部含Si表面具有小于约的均匀厚度。

6. 发明授权

US07906368B2 Phase change memory with tapered heater 有权
标题翻译：带锥形加热器的相变存储器
公开(公告)号：US07906368B2
公开(公告)日：2011-03-15
申请号：US11771501
申请日：2007-06-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L21/06
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。

7. 发明申请

US20090289242A1 Phase Change Memory With Tapered Heater 有权
标题翻译：带锥形加热器的相变记忆
公开(公告)号：US20090289242A1
公开(公告)日：2009-11-26
申请号：US12511602
申请日：2009-07-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.Another embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。本发明的另一实施例包括可配置为用作非易失性存储元件的相变存储器（PCM）结构。该元件包括至少一个底部电极; 在所述底部电极的上表面的至少一部分上的至少一个相变材料层; 以及在所述相变材料层的上表面的至少一部分上的至少一个加热层，其中所述加热器层具有锥形形状，使得所述加热器层的上表面的横截面宽度比加热器层的底表面的与相变材料层接触的横截面宽度。

8. 发明申请

US20070201267A1 Sense circuit for resistive memory 有权
标题翻译：电阻式存储器感应电路
公开(公告)号：US20070201267A1
公开(公告)日：2007-08-30
申请号：US11361811
申请日：2006-02-24
申请人： Thomas Happ , Matthew Breitwisch , Hsiang-Lang Lung
发明人： Thomas Happ , Matthew Breitwisch , Hsiang-Lang Lung
IPC分类号： G11C11/00
CPC分类号： G11C7/062 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
摘要翻译：存储器包括相变存储器单元和电路。相变存储单元可以被设置为至少三种不同的状态，包括基本上为结晶状态，基本为非晶状态，以及至少一种部分结晶和部分非晶状态。电路在存储器单元两端施加第一电压以确定存储器单元是否被设置在基本上为结晶状态，并且在该存储单元上施加第二电压以确定存储器单元是否被设置为部分结晶和部分非晶态。

9. 发明申请

US20090001341A1 Phase Change Memory with Tapered Heater 有权
标题翻译：带锥形加热器的相变存储器
公开(公告)号：US20090001341A1
公开(公告)日：2009-01-01
申请号：US11771501
申请日：2007-06-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.Another embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。本发明的另一实施例包括可配置为用作非易失性存储元件的相变存储器（PCM）结构。该元件包括至少一个底部电极; 在所述底部电极的上表面的至少一部分上的至少一个相变材料层; 以及在所述相变材料层的上表面的至少一部分上的至少一个加热层，其中所述加热器层具有锥形形状，使得所述加热器层的上表面的横截面宽度比加热器层的底表面的与相变材料层接触的横截面宽度。

10. 发明授权

US07378710B2 FinFET SRAM cell using inverted FinFET thin film transistors 有权
标题翻译： FinFET SRAM单元采用反向FinFET薄膜晶体管
公开(公告)号：US07378710B2
公开(公告)日：2008-05-27
申请号：US10539335
申请日：2002-12-19
申请人： Matthew Breitwisch , Edward J. Nowak
发明人： Matthew Breitwisch , Edward J. Nowak
IPC分类号： H01L21/00
CPC分类号： H01L27/11 , H01L21/84 , H01L27/1104 , H01L27/1203 , H01L29/66787 , H01L29/785
摘要： An integrated circuit, such as a SRAM cell (130), including an inverted FinFET transistor (P2) and a FinFET transistor (N3). The inverted FinFET transistor includes a first gate region (108) formed by semiconductor structure (100) on a substrate, a first body region comprised of a semiconductor layer (104), having a first channel region (112) disposed on the first gate region and a source (110) and drain (114) formed on either side of the first channel region. The FinFET transistor (N3) is coupled to the inverted FinFET transistor, and includes a second body region formed by the semiconductor structure (102), having a second channel region (118), and a source (116) and drain (120) formed on either side of the second channel region, and a second gate region (122) comprised of the semiconductor layer, disposed on the second channel region.
摘要翻译：诸如SRAM单元（130）的集成电路，包括反向的FinFET晶体管（P 2）和FinFET晶体管（N 3）。反向FinFET晶体管包括由衬底上的半导体结构（100）形成的第一栅极区（108），由半导体层（104）组成的第一体区，其具有设置在第一栅极区上的第一沟道区（112）以及形成在第一通道区域的任一侧上的源极（110）和漏极（114）。 FinFET晶体管（N 3）耦合到反向的FinFET晶体管，并且包括由半导体结构（102）形成的具有第二沟道区（118）的第二体区，以及源极（116）和漏极（120）形成在所述第二沟道区的任一侧上，以及由所述半导体层构成的第二栅极区（122），设置在所述第二沟道区上。

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