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1. 发明授权

US06388696B1 Led array, and led printer head 失效
标题翻译： LED阵列和led打印头
公开(公告)号：US06388696B1
公开(公告)日：2002-05-14
申请号：US09084324
申请日：1998-05-27
申请人： Masumi Taninaka , Mitsuhiko Ogihara , Hiroshi Hamano , Takatoku Shimizu
发明人： Masumi Taninaka , Mitsuhiko Ogihara , Hiroshi Hamano , Takatoku Shimizu
IPC分类号： B41J245
CPC分类号： B41J2/45 , H01L24/06 , H01L27/153 , H01L2224/04042 , H01L2224/0603 , H01L2224/45144 , H01L2224/48465 , H01L2224/49107 , H01L2224/49109 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semiconductor block 11. On the first layer insulating film 12, p-side electrodes 14 to connect to the p-type semiconductor layers 13 at the first opening portions 16a and an n-side electrode 55 (an n-side contact electrode 55a and an n-side pad electrode 55b) to connect with the n-type semiconductor block 11 at the n-side opening portion 17 are formed. Furthermore, p-side common wirings 4 to connect with specific p-side electrodes 14 are formed via a second layer insulating film 18. The p-side electrodes 14 and the n-side electrode 55 are formed using the same conductive film material through a single film formation and patterning process. An Au alloy film, for instance, may be used to form the conductive film that is to constitute the p-side electrodes 14 and the n-side electrode 55.
摘要翻译：根据本发明，多个p型半导体层13形成为单列，并且在n型层中的层上形成具有第一开口部分16a和n侧开口部分17的第一层绝缘膜12，在第一层绝缘膜12上，在第一开口部16a和n侧电极55（n侧接触电极55a和n侧电极55）连接到p型半导体层13的p侧电极14 形成与n侧开口部17处的n型半导体块11连接的n侧焊盘电极55b）。此外，通过第二层绝缘膜18形成与特定p侧电极14连接的p侧公共配线4.P侧电极14和n侧电极55使用相同的导电膜材料通过单膜形成和图案化工艺。例如，可以使用Au合金膜来形成构成p侧电极14和n侧电极55的导电膜。

2. 发明授权

US06211537B1 LED array 失效
标题翻译： LED阵列
公开(公告)号：US06211537B1
公开(公告)日：2001-04-03
申请号：US09040450
申请日：1998-03-18
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L3300
CPC分类号： B41J2/45 , H01L27/153 , H01L33/0008
摘要： A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in a row. A diffusion region is formed in the semiconductor substrate through each of the first windows. An electrode is formed to have an area in contact with the corresponding diffusion region. Another electrode is formed on the other side of the substrate. A second interlayer dielectric is formed on the first interlayer dielectric such that the second interlayer dielectric does not overlap the area of the electrode and does not extend to a first perimeter of the area.
摘要翻译：可以在没有高精度掩模对准的情况下制造1200dpi的LED，并提供良好的光辐射效率。第一层间电介质形成在半导体衬底上，并且具有形成在其中的多个第一窗口并排成一行。通过每个第一窗口在半导体衬底中形成扩散区域。电极形成为具有与相应的扩散区域接触的区域。另一电极形成在基板的另一侧。第二层间电介质形成在第一层间电介质上，使得第二层间电介质不与电极的区域重叠，并且不延伸到该区域的第一周边。

3. 发明授权

US6064418A Led array, print head, and electrophotographic printer 失效
标题翻译： LED阵列，打印头和电子照相打印机
公开(公告)号：US6064418A
公开(公告)日：2000-05-16
申请号：US57611
申请日：1998-04-09
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L27/15 , H01L33/08 , H01L33/38 , H01L33/44 , H01L33/58
CPC分类号： H01L33/0008 , B41J2/45 , H01L27/153
摘要： In an array of light-emitting diodes formed by diffusion of an impurity into a semiconductor substrate, the width of the diodes in the array direction is between four-tenths and five-tenths of the array pitch. The width of the windows above the diodes is between three-tenths and four-tenths of the array pitch. Between one-fourth and one-half of the surface area of each diode is covered by an electrode making contact with the diode through the window. The distance from the centers of the light-emitting diodes at the ends of the array to the edges of the substrate is between twenty-five and sixty-five hundredths of the array pitch.
摘要翻译：在通过将杂质扩散到半导体衬底中形成的发光二极管的阵列中，二极管在阵列方向上的宽度是阵列间距的十分之五十分之一。二极管上方的窗口的宽度在阵列间距的十分之三到四分之一之间。每个二极管的四分之一到四分之一的表面积由与二极管通过窗口接触的电极覆盖。从阵列端部的发光二极管的中心到基板的边缘的距离在阵列间距的二十五分之一到六百零五分之间。

4. 发明授权

US5972729A Method of manufacturing light-receiving/emitting diode array chip 失效
标题翻译：制造光接收/发光二极管阵列芯片的方法
公开(公告)号：US5972729A
公开(公告)日：1999-10-26
申请号：US31534
申请日：1998-02-27
申请人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
发明人： Takatoku Shimizu , Mitsuhiko Ogihara , Masumi Taninaka , Hiroshi Hamano
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L27/15 , H01L31/10 , H01L33/08 , H01L33/30 , H01L33/44 , H01L33/48 , H01L33/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0008 , Y10S438/975
摘要： A method of manufacturing a light-emitting or a light-receiving diode array chip. A first interlayer dielectric is formed in each of a plurality of chip areas on a substrate of a first conductivity type. Impurity diffusion regions of a second conductivity type are formed in the substrate using the first interlayer dielectric as a diffusion mask. An electrode is formed in contact with each of the impurity diffusion regions. The substrate is separated so that the plurality of chip areas are separated into individual chips. A second interlayer dielectric may be formed on the first interlayer dielectric after forming the impurity diffusion regions. The second interlayer dielectric is formed such that the second interlayer dielectric is absent from a second area along which the substrate is separated into the individual chips, at least in the vicinity of the last one of a plurality of windows. Island-shaped patterns may be formed on the interlayer dielectric so as to hold the interlayer dielectric onto the substrate. The first interlayer dielectric may be removed such that the first interlayer dielectric is absent from the second area, at least in the vicinity of the last one of the plurality of windows.
摘要翻译：一种制造发光或光接收二极管阵列芯片的方法。在第一导电类型的衬底上的多个芯片区域中的每一个中形成第一层间电介质。使用第一层间电介质作为扩散掩模，在衬底中形成第二导电类型的杂质扩散区域。形成与每个杂质扩散区接触的电极。分离基板使得多个芯片区域分离为单独的芯片。在形成杂质扩散区之后，可以在第一层间电介质上形成第二层间电介质。第二层间电介质形成为使得第二层间电介质不存在于第二区域中，至少在多个窗口中的最后一个窗口附近，基板沿着该第二区域分离成单独的芯片。可以在层间电介质上形成岛状图案，以将层间电介质保持在基板上。可以去除第一层间电介质，使得至少在多个窗口中的最后一个窗口附近，第二区域中不存在第一层间电介质。

5. 发明授权

US6133588A Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas 有权
标题翻译：发光元件阵列和具有分开的发光和导电扩散区域的制造方法
公开(公告)号：US6133588A
公开(公告)日：2000-10-17
申请号：US128856
申请日：1998-08-04
申请人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
IPC分类号： H01L33/08 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0008 , H01L33/40
摘要： A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.
摘要翻译：在具有半绝缘上层和导电性下层的半导体衬底中形成发光元件。杂质扩散到两层中，通过在下层中形成pn结而形成发光区域。通过将杂质扩散到上层中形成另外的导电区域。在基板上形成电极，与导电区域电接触，但不覆盖发光区域的任何部分。导电区域将电流从电极传送到发光区域。

6. 发明授权

US6063644A Light-emitting element and array with etched surface, and fabrication method thereof 有权
标题翻译：具有蚀刻表面的发光元件和阵列及其制造方法
公开(公告)号：US6063644A
公开(公告)日：2000-05-16
申请号：US145278
申请日：1998-09-02
申请人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Masumi Taninaka , Takatoku Shimizu , Hiroshi Hamano
IPC分类号： H01L33/08 , H01L33/30 , H01L33/36 , H01L33/44 , H01L21/20
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062
摘要： A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes crystal defects caused by the diffusion process, is removed by etching, thereby increasing the light-emitting efficiency by removing nonradiative recombination centers.
摘要翻译：通过将杂质扩散到半导体衬底中，形成发光区域，形成发光元件或发光元件阵列。在扩散之后，通过蚀刻去除包括由扩散过程引起的晶体缺陷的发光区域的表面区域，从而通过去除非辐射复合中心来提高发光效率。

7. 发明授权

US06762437B2 Light emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US06762437B2
公开(公告)日：2004-07-13
申请号：US10322740
申请日：2002-12-19
申请人： Mitsuhiko Ogihara , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L3300
CPC分类号： H01L33/14 , B41J2/45 , H01L27/153
摘要： A light emitting semiconductor device comprises an upper cladding layer (106) consisting of a first upper cladding layer (106a) provided on an active layer (105) and a second upper cladding layer (106b) provided on the first upper cladding layer (106a) to increase the light emitting efficiency and reduce the defective ratio in formation of a patterned layer. The energy band gap (Eg(106a)) of the first upper cladding layer (106a) is larger than the energy band gap (Eg(106b)) of the second upper cladding layer (106b), which is larger than the energy band gap (Eg(105)) of the active layer (105). One of a patterned layer, an dielectric interlayer (109) has an etched region at a predetermined area thereof so that at least a part of the upper cladding layer (106) or a second conductive type semiconductor region (108) is exposed.
摘要翻译：一种发光半导体器件包括由设置在有源层（105）上的第一上包层（106a）和设置在第一上包层（106a）上的第二上包层（106b）组成的上包层（106）以增加发光效率并降低形成图案层的缺陷率。第一上包层（106a）的能带隙（Eg（106a））大于第二上包层（106b）的能带隙（Eg（106b）），其大于能带隙（Eg（105））。图案层之一，电介质中间层（109）在其预定区域具有蚀刻区域，使得上覆层（106）或第二导电类型半导体区域（108）的至少一部分露出。

8. 发明授权

US06384429B1 Light-emitting semiconductor device with reduced obstructions to light emission 有权
标题翻译：发光半导体器件，阻碍发光
公开(公告)号：US06384429B1
公开(公告)日：2002-05-07
申请号：US09348562
申请日：1999-07-07
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L3300
CPC分类号： H01L33/305 , H01L33/38 , H01L33/40
摘要： In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light.
摘要翻译：在本发明的一个方面中，发光半导体器件具有一定带隙能量的发光层，具有较高带隙能量的上覆层，延伸到发光层中的第一扩散区域，第二扩散层区域仅延伸到上包层，以及与第二扩散区接触的电极，而不覆盖第一扩散区的任何部分。第二扩散区域将电流传导到第一扩散区域，其中光从发光层中的pn结发射。在本发明的另一方面，提供半导体接触层以确保与电极的欧姆接触，并且半导体接触层从发光区域移除，避免吸收光。

9. 发明授权

US5917227A Light-emitting-diode array and light-emitting-diode element 失效
标题翻译：发光二极管阵列和发光二极管元件
公开(公告)号：US5917227A
公开(公告)日：1999-06-29
申请号：US924832
申请日：1997-09-05
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L31/10 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/34 , H01L33/38 , H01L27/14
CPC分类号： H01L33/0008 , H01L27/153 , H01L33/0066
摘要： A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-doped compound semiconductor layer, and provide separation into isolated block regions each containing an equal number of diffusion regions. A plurality of shared electrode lines are connected to the diffusion regions in a plurality of the block regions, in such a relationship that diffusion regions selected from each of the block regions are connected to a common shared electrode. At least a surface portion of the substrate is formed of silicon. The density of the diffusion regions can be increased without increasing the number of the electrode pads. Moreover, the substrate is free from breakage or cracks.
摘要翻译：发光二极管阵列包括在衬底和第一化合物半导体层之间的非掺杂化合物半导体层。多个隔离区域从第一化合物半导体层延伸到非掺杂化合物半导体层的表面，并且分离成各自包含相等数量的扩散区域的隔离区域。多个共享电极线以多个块区域中的扩散区域连接，以从每个块区域中选出的扩散区域连接到公共共享电极的关系。至少衬底的表面部分由硅形成。可以增加扩散区域的密度而不增加电极焊盘的数量。此外，基材没有断裂或裂纹。

10. 发明授权

US6054724A Light-emitting diode, light-emitting diode array 失效
标题翻译：发光二极管，发光二极管阵列
公开(公告)号：US6054724A
公开(公告)日：2000-04-25
申请号：US923816
申请日：1997-09-04
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L33/00 , H01L33/30 , H01L33/34
CPC分类号： H01L27/153 , H01L33/0008
摘要： A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
摘要翻译：在衬底上形成第一导电类型的化合物半导体层，并且在化合物半导体层上形成第二导电类型的扩散区域。发光二极管使用大直径晶片具有高发射光功率。

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