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1. 发明授权

US06384429B1 Light-emitting semiconductor device with reduced obstructions to light emission 有权
标题翻译：发光半导体器件，阻碍发光
公开(公告)号：US06384429B1
公开(公告)日：2002-05-07
申请号：US09348562
申请日：1999-07-07
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L3300
CPC分类号： H01L33/305 , H01L33/38 , H01L33/40
摘要： In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light.
摘要翻译：在本发明的一个方面中，发光半导体器件具有一定带隙能量的发光层，具有较高带隙能量的上覆层，延伸到发光层中的第一扩散区域，第二扩散层区域仅延伸到上包层，以及与第二扩散区接触的电极，而不覆盖第一扩散区的任何部分。第二扩散区域将电流传导到第一扩散区域，其中光从发光层中的pn结发射。在本发明的另一方面，提供半导体接触层以确保与电极的欧姆接触，并且半导体接触层从发光区域移除，避免吸收光。

2. 发明授权

US5917227A Light-emitting-diode array and light-emitting-diode element 失效
标题翻译：发光二极管阵列和发光二极管元件
公开(公告)号：US5917227A
公开(公告)日：1999-06-29
申请号：US924832
申请日：1997-09-05
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L31/10 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/34 , H01L33/38 , H01L27/14
CPC分类号： H01L33/0008 , H01L27/153 , H01L33/0066
摘要： A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-doped compound semiconductor layer, and provide separation into isolated block regions each containing an equal number of diffusion regions. A plurality of shared electrode lines are connected to the diffusion regions in a plurality of the block regions, in such a relationship that diffusion regions selected from each of the block regions are connected to a common shared electrode. At least a surface portion of the substrate is formed of silicon. The density of the diffusion regions can be increased without increasing the number of the electrode pads. Moreover, the substrate is free from breakage or cracks.
摘要翻译：发光二极管阵列包括在衬底和第一化合物半导体层之间的非掺杂化合物半导体层。多个隔离区域从第一化合物半导体层延伸到非掺杂化合物半导体层的表面，并且分离成各自包含相等数量的扩散区域的隔离区域。多个共享电极线以多个块区域中的扩散区域连接，以从每个块区域中选出的扩散区域连接到公共共享电极的关系。至少衬底的表面部分由硅形成。可以增加扩散区域的密度而不增加电极焊盘的数量。此外，基材没有断裂或裂纹。

3. 发明授权

US6054724A Light-emitting diode, light-emitting diode array 失效
标题翻译：发光二极管，发光二极管阵列
公开(公告)号：US6054724A
公开(公告)日：2000-04-25
申请号：US923816
申请日：1997-09-04
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L33/00 , H01L33/30 , H01L33/34
CPC分类号： H01L27/153 , H01L33/0008
摘要： A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
摘要翻译：在衬底上形成第一导电类型的化合物半导体层，并且在化合物半导体层上形成第二导电类型的扩散区域。发光二极管使用大直径晶片具有高发射光功率。

4. 发明授权

US06054726A Light-emitting semiconductor device with planar structure 有权
标题翻译：具有平面结构的发光半导体器件
公开(公告)号：US06054726A
公开(公告)日：2000-04-25
申请号：US328265
申请日：1999-06-17
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L33/08 , H01L33/10 , H01L33/26 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/40 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , H01L33/105 , H01S5/18308 , H01S5/0208 , H01S5/0425 , H01S5/18305 , H01S5/18327 , H01S5/2072 , H01S5/3054
摘要： A light-emitting semiconductor device has a planar structure including two multilayer reflecting layers, two cladding layers, and an active layer of a first conductive type. The cladding layers have bandgap energies exceeding the bandgap energy of the active layer. The multilayer reflecting layers each include at least one constituent layer with a bandgap energy exceeding the bandgap energy of the active layer. An area of a second conductive type extends from the upper surface of the device through the upper multilayer reflecting layer and upper cladding layer into the active layer, forming a pn junction in the active layer. This planar structure is suitable for high-yield manufacturing.
摘要翻译：发光半导体器件具有包括两个多层反射层，两个包覆层和第一导电类型的有源层的平面结构。包覆层的带隙能量超过有源层的带隙能量。多层反射层各自包括具有超过有源层的带隙能量的带隙能量的至少一个构成层。第二导电类型的区域从器件的上表面穿过上多层反射层和上覆层延伸到有源层中，在有源层中形成pn结。该平面结构适用于高产量制造。

5. 发明授权

US06407410B1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US06407410B1
公开(公告)日：2002-06-18
申请号：US09291069
申请日：1999-04-14
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L3300
CPC分类号： H01L33/025 , H01L27/153 , H01L33/24 , H01L33/30
摘要： A light emitting diode in accordance with the present invention has a p-n junction which is formed by selectively implanting an impurity from the surface of a semiconductor substrate, and also has an etched groove which is formed in the p-n junction area near the surface of the substrate. In the area where the etched groove is formed, the p-type area and the n-type area are spatially separated in the region of the substrate, therefore the movement of minority carriers does not occur. As a consequence, in the light emitting diode in accordance with the present invention, the movement of minority carriers in the p-n junction interface occurs at a deeper position of the semiconductor substrate. In a deep position of the semiconductor substrate, the recombination rate of minority carriers is high. Therefore if the recombination of minority carriers is increased in a deep position, the emission efficiency of the light emitting diode increases.
摘要翻译：根据本发明的发光二极管具有通过从半导体衬底的表面选择性地注入杂质形成的pn结，并且还具有形成在衬底表面附近的pn结区域中的蚀刻槽。在形成蚀刻槽的区域中，p型区域和n型区域在基板的区域中在空间上分离，因此不会发生少数载流子的移动。结果，在根据本发明的发光二极管中，p-n结界面中的少数载流子的移动发生在半导体衬底的较深位置处。在半导体衬底的深位置，少数载流子的复合率高。因此，如果少量载流子的复合在深位置增加，则发光二极管的发射效率增加。

6. 发明授权

US06271051B1 Light-emitting diode, light-emitting diode array, and method of their fabrication 有权
标题翻译：发光二极管，发光二极管阵列及其制造方法
公开(公告)号：US06271051B1
公开(公告)日：2001-08-07
申请号：US09329804
申请日：1999-06-10
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L2122
CPC分类号： H01L27/153 , H01L33/0008
摘要： A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
摘要翻译：在衬底上形成第一导电类型的化合物半导体层，并且在化合物半导体层上形成第二导电类型的扩散区域。发光二极管使用大直径晶片具有高发射光功率。

7. 发明授权

US6144043A Light emitting semiconductor device having plural light emitting elements with different junction depth 有权
标题翻译：具有多个具有不同结深度的发光元件的发光半导体器件
公开(公告)号：US6144043A
公开(公告)日：2000-11-07
申请号：US188896
申请日：1998-11-10
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Hiroshi Hamano , Masumi Taninaka
IPC分类号： H01L27/15 , H01L33/08 , H01L33/30 , H01L33/38 , H01L33/00
CPC分类号： H01L33/30 , H01L27/15 , H01L33/0008 , H01L33/305
摘要： A light emitting semiconductor device in which LEDs for emitting light different in wavelength from one another are densely integrated. First to fifth semiconductor layers are AlGaAs layers being different in Al composition ratio, and when it is assumed that the energy band gaps of the first to fifth semiconductor layers are respectively Eg1, Eg2, Eg3, Eg4 and Eg5, they satisfy the relation that Eg1
摘要翻译：一种发光半导体器件，其中用于发射彼此不同波长的光的LED密集地集成。第一至第五半导体层的Al AlAs层的Al组成比不同，当假定第一至第五半导体层的能带间隙分别为Eg1，Eg2，Eg3，Eg4和Eg5时，它们满足关系式Eg1

8. 发明授权

US06563138B2 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
标题翻译：低成本，高密度发光二极管阵列及其制造方法
公开(公告)号：US06563138B2
公开(公告)日：2003-05-13
申请号：US09750299
申请日：2000-12-29
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译：在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。上层通过完全穿过上层的隔离通道分成块。通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。每个块具有驱动块中的发光二极管的块电极。这排发光二极管与穿过隔离通道的多条共用线并联。每个共享线路连接到不同块中的多个发光二极管。

9. 发明授权

US06222208B1 Light-emitting diode and light-emitting diode array 失效
标题翻译：发光二极管和发光二极管阵列
公开(公告)号：US06222208B1
公开(公告)日：2001-04-24
申请号：US09089093
申请日：1998-06-02
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L27/153 , H01L33/025 , H01L33/24
摘要： A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap greater than that of the first semiconductor epitaxial layer, and an area of impurities formed within the first semiconductor epitaxial layer and the second semiconductor epitaxial layer by doping impurity of a second conduction type from the side of the second semiconductor epitaxial layer. A front of the diode is located within the first semiconductor epitaxial layer.
摘要翻译：发光二极管包括第一导电类型的第一半导体外延层，第一导电类型的第二半导体外延层，层压在第一半导体外延层上并具有大于第一半导体外延层的能带隙的能带隙，以及通过从第二半导体外延层的侧面掺杂第二导电类型的杂质而形成在第一半导体外延层和第二半导体外延层内的杂质区域。二极管的前部位于第一半导体外延层内。

10. 发明授权

US06190935B1 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
公开(公告)号：US06190935B1
公开(公告)日：2001-02-20
申请号：US09359789
申请日：1999-07-26
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

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