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    • 1. 发明授权
    • Electroluminescence element and process for fabricating same
    • 电致发光元件及其制造方法
    • US5763111A
    • 1998-06-09
    • US631158
    • 1996-04-12
    • Masayuki KatayamaAtsushi MizutaniYutaka HattoriNobuei Ito
    • Masayuki KatayamaAtsushi MizutaniYutaka HattoriNobuei Ito
    • C09K11/77H05B33/10H05B33/14H05B33/00
    • H05B33/14C09K11/776H05B33/10Y10S428/917
    • An electroluminescence element including at least an insulating substrate, a first electrode, a first insulating layer, a luminescent layer having at least one side constructed and arranged to allow light to pass out of the electroluminescence element, a second insulating layer and a second electrode in this order in a stack, with the components on the at least one side of the luminescent layer being optically transparent. The luminescent layer includes a base material formed from a II-VI compound semiconductor, at least one rare earth element, and at least one halogen element substituted for a VI group element at a lattice site of the VI group element of the II-VI compound semiconductor and located in the vicinity of the at least one rare earth element. The luminescent layer has a luminescence spectrum in which, in addition to the original emission peaks of the at least one rare earth element, some of the original emission peaks have at least one split emission peak located within a 10 nm wavelength range thereof.
    • 一种电致发光元件,其至少包括绝缘基板,第一电极,第一绝缘层,具有至少一个侧面的发光层,所述至少一个侧面构造和布置成允许光从电致发光元件中通过,第二绝缘层和第二电极 堆叠中的这种顺序与发光层的至少一侧上的组分是光学透明的。 发光层包括由II-VI化合物半导体形成的基材,至少一种稀土元素,以及在II-VI化合物的VI族元素的晶格位置取代VI族元素的至少一种卤素元素 并且位于所述至少一个稀土元素的附近。 发光层具有发光光谱,其中除了至少一种稀土元素的原始发射峰之外,一些原始发射峰具有位于其10nm波长范围内的至少一个分裂发射峰。
    • 3. 发明授权
    • Method and apparatus for fabricating electroluminescent device
    • 用于制造电致发光器件的方法和装置
    • US06004618A
    • 1999-12-21
    • US841334
    • 1997-04-30
    • Atsushi MizutaniMasayuki KatayamaNobuei ItoTadashi Hattori
    • Atsushi MizutaniMasayuki KatayamaNobuei ItoTadashi Hattori
    • C23C16/30C23C16/44C23C16/455H05B33/10H05B33/14B05D5/12C23C16/00
    • C23C16/45576C23C16/305H05B33/10
    • Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed. The first tube for the first material is laid in the center of the furnace. The third tube for the third material forming the luminescent center is laid around the first gas supply tube. The second tube is laid around the third tube.
    • 公开了具有高品质发光层的电致发光器件的制造。 该装置发出强烈的蓝光。 在玻璃基板上依次形成第一电极层,第一电介质层,发光层,第二电介质层和第二电极层。 至少装置的出口侧由光学透明材料制成。 属于元素周期表II族的第II族元素的第一气态源材料,属于VIB族的VIB族元素的第二气态源材料和形成发光体的发光中心的元素的第三气态源材料 层分别通过第一,第二和第三气体供给管供给到反应炉中,并使其彼此反应。 因此,通过化学气相沉积形成发光层。 第一材料作为形成发光层的基材。 用于第一种材料的第一管被放置在炉的中心。 形成发光中心的第三材料的第三管被放置在第一气体供应管的周围。 第二个管被放置在第三根管子周围。
    • 4. 发明授权
    • Process for the production of electroluminescence element,
electroluminescence element
    • 电致发光元件,电致发光元件的制造方法
    • US5853552A
    • 1998-12-29
    • US300552
    • 1994-09-07
    • Hajime IshiharaYutaka HattoriMasayuki KatayamaNobuei ItoTadashi Hattori
    • Hajime IshiharaYutaka HattoriMasayuki KatayamaNobuei ItoTadashi Hattori
    • C09K11/61C09K11/77C23C14/00C23C14/06H05B33/10H05B33/14H05B33/18C23C14/34
    • C23C14/0057C09K11/612C09K11/7745C09K11/776C23C14/0629H05B33/10H05B33/14H05B33/18
    • A process for producing an electroluminescence element provided with a luminescent layer sandwiched between two electrodes on an insulating substrate, the luminescent layer being composed of a host material with a luminescent center element added. The process comprises a step of forming the aforesaid luminescent layer as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of a compound of an element of Group II and an element of Group VI, to which a halide of a rare earth element is added as the luminescent center element. The atmosphere at the time of the film formation contains either a halogen gas or halide gas. The aforesaid luminescent layer is formed as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of the aforesaid compound of an element of Group II and an element of Group VI, to which a fluoride or fluorine compound of the luminescent center element and a halide other than fluoride of the element of Group II are added. The film formation atmosphere may be pretreated with a chlorine-containing gas prior to a film formation step of forming the luminescent layer as a film onto the insulating substrate by a sputtering method by use of a source material composed of the host material with the luminescent center element. An electro-luminescence element is further disclosed, wherein the X-ray diffraction spectrum thereof has only a single peak at an X-ray diffraction angle from the luminescent layer, ranging from 25.degree. to 30.degree. according to a thin film X-ray diffraction measuring method using Cu-Kd radiation, and no other peaks of the X-ray diffraction spectrum exist at an X-ray diffraction angle of approximately 27.degree..
    • 一种制造电致发光元件的方法,所述电致发光元件在绝缘基板上具有夹在两个电极之间的发光层,所述发光层由添加有发光中心元件的主体材料构成。 该方法包括通过溅射或蒸发,通过使用由II族元素和VI族元素的化合物组成的源材料,通过溅射或蒸发将上述发光层作为膜形成在绝缘基板上的步骤,其中 加入稀土元素的卤化物作为发光中心元件。 成膜时的气氛中含有卤素气体或卤化物气体。 上述发光层通过溅射或蒸镀通过使用由上述化合物II族元素和VI族元素组成的源材料形成为绝缘基板,氟化物或氟化合物 的发光中心元素和除了II族元素的氟化物之外的卤化物。 成膜气氛可以在通过使用由主体材料与发光中心构成的源材料通过溅射法将形成发光层作为膜的成膜步骤之前用含氯气体预处理 元件。 进一步公开了一种电致发光元件,其中,根据薄膜X射线衍射,其X射线衍射光谱在距发光层的X射线衍射角仅为单峰,为25〜30° 使用Cu-Kd辐射的测量方法,并且在大约27°的X射线衍射角处不存在X射线衍射光谱的其它峰。