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    • 1. 发明授权
    • Process for the production of electroluminescence element,
electroluminescence element
    • 电致发光元件,电致发光元件的制造方法
    • US5853552A
    • 1998-12-29
    • US300552
    • 1994-09-07
    • Hajime IshiharaYutaka HattoriMasayuki KatayamaNobuei ItoTadashi Hattori
    • Hajime IshiharaYutaka HattoriMasayuki KatayamaNobuei ItoTadashi Hattori
    • C09K11/61C09K11/77C23C14/00C23C14/06H05B33/10H05B33/14H05B33/18C23C14/34
    • C23C14/0057C09K11/612C09K11/7745C09K11/776C23C14/0629H05B33/10H05B33/14H05B33/18
    • A process for producing an electroluminescence element provided with a luminescent layer sandwiched between two electrodes on an insulating substrate, the luminescent layer being composed of a host material with a luminescent center element added. The process comprises a step of forming the aforesaid luminescent layer as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of a compound of an element of Group II and an element of Group VI, to which a halide of a rare earth element is added as the luminescent center element. The atmosphere at the time of the film formation contains either a halogen gas or halide gas. The aforesaid luminescent layer is formed as a film onto the insulating substrate by either sputtering or evaporation, by use of a source material composed of the aforesaid compound of an element of Group II and an element of Group VI, to which a fluoride or fluorine compound of the luminescent center element and a halide other than fluoride of the element of Group II are added. The film formation atmosphere may be pretreated with a chlorine-containing gas prior to a film formation step of forming the luminescent layer as a film onto the insulating substrate by a sputtering method by use of a source material composed of the host material with the luminescent center element. An electro-luminescence element is further disclosed, wherein the X-ray diffraction spectrum thereof has only a single peak at an X-ray diffraction angle from the luminescent layer, ranging from 25.degree. to 30.degree. according to a thin film X-ray diffraction measuring method using Cu-Kd radiation, and no other peaks of the X-ray diffraction spectrum exist at an X-ray diffraction angle of approximately 27.degree..
    • 一种制造电致发光元件的方法,所述电致发光元件在绝缘基板上具有夹在两个电极之间的发光层,所述发光层由添加有发光中心元件的主体材料构成。 该方法包括通过溅射或蒸发,通过使用由II族元素和VI族元素的化合物组成的源材料,通过溅射或蒸发将上述发光层作为膜形成在绝缘基板上的步骤,其中 加入稀土元素的卤化物作为发光中心元件。 成膜时的气氛中含有卤素气体或卤化物气体。 上述发光层通过溅射或蒸镀通过使用由上述化合物II族元素和VI族元素组成的源材料形成为绝缘基板,氟化物或氟化合物 的发光中心元素和除了II族元素的氟化物之外的卤化物。 成膜气氛可以在通过使用由主体材料与发光中心构成的源材料通过溅射法将形成发光层作为膜的成膜步骤之前用含氯气体预处理 元件。 进一步公开了一种电致发光元件,其中,根据薄膜X射线衍射,其X射线衍射光谱在距发光层的X射线衍射角仅为单峰,为25〜30° 使用Cu-Kd辐射的测量方法,并且在大约27°的X射线衍射角处不存在X射线衍射光谱的其它峰。
    • 4. 发明授权
    • Dry etching method and manufacturing method of manufacturing EL element
using same
    • 干蚀刻方法和使用其制造EL元件的制造方法
    • US5888410A
    • 1999-03-30
    • US825579
    • 1997-03-31
    • Hajime IshiharaKazuhiro InoguchiYutaka HattoriNobuei ItoTadashi Hattori
    • Hajime IshiharaKazuhiro InoguchiYutaka HattoriNobuei ItoTadashi Hattori
    • C23F4/00H01L21/302H01L21/3065H01L21/461H01L21/465H05B33/10H05B33/12H05B33/14B44C1/22
    • H05B33/10H01L21/465
    • A dry etching method performing dry etching of a material containing zinc forms and patterns a resist on the material to be etched, and etches the material using an etching gas which is a mixed gas of methane gas and an inert gas. A dry etching method that dry etches a material containing zinc etches the material using an etching gas that consists only of methane gas, an inert gas, and hydrogen gas alone. Another dry etching method that dry etches a material containing zinc introduces an etching gas that contains methane gas, an inert gas, and hydrogen gas into a dry etching device, in which the flow rate of the hydrogen gas is set such that it is equal to or greater than the value at which the amount of dissociated hydrogen becomes saturated, and etches the material using the etching gas. An EL element manufacturing method forms a first luminescent material containing zinc in its composition on a first insulated layer, forms a first resist that has a first pattern on the first luminescent material, dry etches the first luminescent material through the first resist, thereby forming the first luminescent layer; forms a second luminescent material having zinc in its composition on the first luminescent layer, forms a second resist on the second luminescent material, and dry etches the second luminescent material through the second resist.
    • 对含有锌的材料进行干蚀刻的干式蚀刻方法形成并在待蚀刻材料上形成抗蚀剂,并使用作为甲烷气体和惰性气体的混合气体的蚀刻气体蚀刻材料。 使用仅由甲烷气体,惰性气体和氢气单独构成的蚀刻气体来干燥蚀刻含锌材料的干蚀刻方法蚀刻材料。 对含有锌的材料进行干蚀刻的另一种干蚀刻方法将含有甲烷气体,惰性气体和氢气的蚀刻气体引入到干法蚀刻装置中,其中氢气的流量设定为等于 或大于解离氢的量饱和的值,并且使用蚀刻气体蚀刻该材料。 EL元件制造方法在第一绝缘层上形成含有锌的第一发光材料,在第一发光材料上形成具有第一图案的第一抗蚀剂,通过第一抗蚀剂干燥蚀刻第一发光材料,从而形成 第一发光层; 在第一发光层上形成具有锌组成的第二发光材料,在第二发光材料上形成第二抗蚀剂,并通过第二抗蚀剂干蚀刻第二发光材料。
    • 8. 发明授权
    • Process for fabricating an electroluminescent device
    • 制造电致发光器件的方法
    • US5989785A
    • 1999-11-23
    • US941753
    • 1997-09-30
    • Hajime IshiharaKazuhiro InoguchiNobuei ItoTadashi Hattori
    • Hajime IshiharaKazuhiro InoguchiNobuei ItoTadashi Hattori
    • H05B33/14H05B33/10H05B33/12H05B33/22G03F7/00
    • H05B33/10
    • In an electroluminescent device comprising an insulating substrate having consecutively thereon a first electrode, a first insulating layer, a luminescent layer composed of two types or more luminescent portions differing in luminescent color which are provided in a flat panel arrangement to give a single-layered luminescent layer, a second insulating layer and a second electrode, a first dielectric film is disposed between the luminescent portions to provide an isolation layer for isolating the luminescent portions, and a second dielectric film for adjusting the luminescence threshold voltage is disposed on the light outcoupling side or on the side opposite thereto of one of said luminescent portions. Herein, the first and second dielectric films provided for isolating the luminescent portions and for adjusting the luminescence threshold voltage, respectively, are made of the same material and have a refractive index lower than that of both luminescent portions.
    • 在包括绝缘基板的电致发光器件中,其上连续地具有第一电极,第一绝缘层,由两个或更多个发光颜色不同的发光部分构成的发光层,其设置在平板布置中以产生单层发光 层,第二绝缘层和第二电极,第一电介质膜设置在发光部分之间,以提供用于隔离发光部分的隔离层,并且用于调节发光阈值电压的第二电介质膜设置在光输出端 或者在与其中一个所述发光部分相对的一侧上。 这里,用于分离发光部分并用于调节发光阈值电压的第一和第二电介质膜由相同的材料制成,折射率低于两个发光部分的折射率。
    • 10. 发明授权
    • Method and apparatus for fabricating electroluminescent device
    • 用于制造电致发光器件的方法和装置
    • US06004618A
    • 1999-12-21
    • US841334
    • 1997-04-30
    • Atsushi MizutaniMasayuki KatayamaNobuei ItoTadashi Hattori
    • Atsushi MizutaniMasayuki KatayamaNobuei ItoTadashi Hattori
    • C23C16/30C23C16/44C23C16/455H05B33/10H05B33/14B05D5/12C23C16/00
    • C23C16/45576C23C16/305H05B33/10
    • Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed. The first tube for the first material is laid in the center of the furnace. The third tube for the third material forming the luminescent center is laid around the first gas supply tube. The second tube is laid around the third tube.
    • 公开了具有高品质发光层的电致发光器件的制造。 该装置发出强烈的蓝光。 在玻璃基板上依次形成第一电极层,第一电介质层,发光层,第二电介质层和第二电极层。 至少装置的出口侧由光学透明材料制成。 属于元素周期表II族的第II族元素的第一气态源材料,属于VIB族的VIB族元素的第二气态源材料和形成发光体的发光中心的元素的第三气态源材料 层分别通过第一,第二和第三气体供给管供给到反应炉中,并使其彼此反应。 因此,通过化学气相沉积形成发光层。 第一材料作为形成发光层的基材。 用于第一种材料的第一管被放置在炉的中心。 形成发光中心的第三材料的第三管被放置在第一气体供应管的周围。 第二个管被放置在第三根管子周围。