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1. 发明授权

US4670320A Alumina formed body and method for its manufacture 失效
标题翻译：氧化铝成型体及其制造方法
公开(公告)号：US4670320A
公开(公告)日：1987-06-02
申请号：US855402
申请日：1986-04-24
申请人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
发明人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
IPC分类号： C04B35/10 , C04B35/65 , C04B35/80 , C04B38/00 , C04B38/04 , B32B3/00 , B32B5/14 , B32B19/00 , B44C1/22
CPC分类号： C04B38/0051 , C04B35/10 , C04B35/65 , C04B35/80 , C04B38/04 , Y10T428/24355 , Y10T428/249956 , Y10T428/249957 , Y10T428/24997 , Y10T428/31
摘要： An alumina formed body comprising many long alumina elements oriented in random directions and interconnected so as to constitute a porous matrix comprising a large number of fine pores. Such a body is manufactured by reacting a glass-formed body comprising silica with aluminum at high temperature to form an alumina composite material comprising alumina, aluminum and silicon and removing aluminum and silicon from the aluminum composite material.
摘要翻译：一种氧化铝成形体，包括沿随机方向取向的多个长的氧化铝元件，并且相互连接，从而构成包含大量细孔的多孔基体。通过使包含二氧化硅的玻璃成形体与铝在高温下反应形成包含氧化铝，铝和硅的氧化铝复合材料并从铝复合材料中除去铝和硅来制造这样的主体。

2. 发明授权

US4673435A Alumina composite body and method for its manufacture 失效
标题翻译：氧化铝复合体及其制造方法
公开(公告)号：US4673435A
公开(公告)日：1987-06-16
申请号：US855448
申请日：1986-04-24
申请人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
发明人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
IPC分类号： C04B35/10 , C04B35/65 , C04B35/80 , C04B41/50 , C04B41/51 , C04B41/87 , C04B41/88 , C22C29/12
CPC分类号： C04B41/009 , C04B35/10 , C04B35/65 , C04B35/80 , C04B41/5025 , C04B41/5031 , C04B41/51 , C04B41/87 , C04B41/88 , C22C29/12 , C04B2111/00612
摘要： An alumina composite body comprising a plurality of elongated alumina elements oriented in random directions and interconnected so as to constitute a porous matrix, and aluminum and silicon tightly filling the porous matrix; and a method of manufacturing an alumina composite body comprising reacting a body of silica, or a body of a silicon compound such as silicon carbide or silicon nitride which has been at least partially oxidized to produce silica, with aluminum so as to change the silica into alumina.
摘要翻译：一种氧化铝复合体，包括沿随机方向定向并互连以构成多孔基体的多个细长氧化铝元件，以及紧密填充多孔基体的铝和硅; 以及一种制造氧化铝复合体的方法，其包括使二氧化硅体或至少部分氧化生成二氧化硅的硅化合物或硅化物的主体与铝反应，以将二氧化硅变成氧化铝。

3. 发明授权

US4810526A Method of coating a recrystallized silicon carbide body with a compact silicon carbide coating 失效
标题翻译：用碳化硅复合涂层涂覆再结晶碳化硅体的方法
公开(公告)号：US4810526A
公开(公告)日：1989-03-07
申请号：US10846
申请日：1987-02-04
申请人： Toshiaki Ito , Masayoshi Yamaguchi , Kazunori Meguro
发明人： Toshiaki Ito , Masayoshi Yamaguchi , Kazunori Meguro
IPC分类号： C04B41/87 , C23C16/458 , B05D3/14
CPC分类号： C23C16/458
摘要： A method of coating a surface of recrystallized silicon body by CVD method comprising a step of heating a feedstock gas containing a silicon source and a carbon source and said non-metallic element by a resistance heat which is generated by electrifying said non-metallic element.
摘要翻译：通过CVD法涂覆再结晶硅体表面的方法，包括通过使所述非金属元件带电产生的电阻热来加热含有硅源和碳源和所述非金属元素的原料气体的步骤。

4. 发明授权

US5492229A Vertical boat and a method for making the same 失效
标题翻译：垂直船和制作相同的方法
公开(公告)号：US5492229A
公开(公告)日：1996-02-20
申请号：US151386
申请日：1993-11-12
申请人： Takashi Tanaka , Jun Yoshikawa , Eiichi Toya , Atsuo Kitazawa , Kazunori Meguro , Tatsuo Nozawa , Yutaka Ishizuka , Yoshiyuki Watanabe , Masaru Seino , Hideo Nakanishi
发明人： Takashi Tanaka , Jun Yoshikawa , Eiichi Toya , Atsuo Kitazawa , Kazunori Meguro , Tatsuo Nozawa , Yutaka Ishizuka , Yoshiyuki Watanabe , Masaru Seino , Hideo Nakanishi
IPC分类号： C30B31/14 , H01L21/673 , A47F7/00
CPC分类号： H01L21/67309 , C30B31/14
摘要： A vertical boat for holding a plurality of semiconductor wafers comprising two end members (2) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4,5,6,104) vertically mounted on the end members (2) for supporting the wafers, wherein each support member (3,4,5,6,104) is formed by a plate-like member having a series of slits (9,10,7,8,108) formed thereon in such a manner that a plurality of support arms are defined by the slits (9,10,7,8,108) at a predetermined interval, each support arm having a support projection (11,12,13,14,112) formed at the end thereof, and wherein the inner portions (P) of the wafer (1) is to be supported by the support projections (11,12,13,14,112) whereas the periphery of the wafer (1) does not contact the arms of the support members (3,4,5,6,104). The slits can be formed in two steps: forming a series of first slit portions on the plate-like member at a predetermined interval so as to retain two side walls of the plate-like member; and forming a series of second small slit portions on one of the side walls at the same interval so as to connect each second slit portion to the corresponding first slit portion.
摘要翻译：一种用于保持多个半导体晶片的垂直船，包括位于垂直船的顶部和底部的两个端部构件（2）和垂直安装在端部构件上的多个支撑构件（3,4,5,6,104）（2），用于支撑晶片，其中每个支撑构件（3,4,5,6,104）由其上形成有一系列狭缝（9,10,7,8,108）的板状构件形成，其方式使得多个支撑臂由狭缝（9,10,7,8,108）以预定的间隔限定，每个支撑臂具有在其端部形成的支撑突起（11,12,13,14,112），并且其中内部晶片（1）的部分（P）将由支撑突起（11,12,13,14,112）支撑，而晶片（1）的周边不与支撑部件（3,4）的臂接触， 5,6,104）。狭缝可以分成两个步骤：以预定间隔在板状构件上形成一系列第一狭缝部分，以便保持板状构件的两个侧壁; 并且在一个侧壁上以相同的间隔形成一系列第二小狭缝部分，以将每个第二狭缝部分连接到相应的第一狭缝部分。

5. 发明授权

US5016610A Radiant tube type heater 失效
标题翻译：辐射管式加热器
公开(公告)号：US5016610A
公开(公告)日：1991-05-21
申请号：US260754
申请日：1988-10-21
申请人： Kazunori Meguro , Toshiaki Itoh , Shigeru Abe
发明人： Kazunori Meguro , Toshiaki Itoh , Shigeru Abe
IPC分类号： C04B35/565 , F23C3/00 , F27B9/06
CPC分类号： F27B9/068 , C04B35/565 , F23C3/002 , Y02P40/65
摘要： A radiant type heater for use in a heating furnace has inner and outer concentric tubes. The tubes have a structure in which silicon carbide particles are joined to each other by a sintering aid such as an aluminum compound sintering aid or a boron compound sintering aid.
摘要翻译：用于加热炉的辐射式加热器具有内部和外部同心管。这些管具有其中碳化硅颗粒通过诸如铝化合物烧结助剂或硼化合物烧结助剂的烧结助剂彼此连接的结构。

6. 发明授权

US4485143A Silicon carbide material for low-melting point fusion metal 失效
标题翻译：碳化硅材料用于低熔点熔融金属
公开(公告)号：US4485143A
公开(公告)日：1984-11-27
申请号：US390135
申请日：1982-06-18
申请人： Susumu Inoue , Isao Sakashita , Kazunori Meguro , Kunio Hamaguchi
发明人： Susumu Inoue , Isao Sakashita , Kazunori Meguro , Kunio Hamaguchi
IPC分类号： C04B41/50 , C04B41/87 , B32B15/00
CPC分类号： C04B41/009 , C04B41/5062 , C04B41/87 , Y10T428/263
摘要： A silicon carbide material for low-melting point fusion metal composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide and containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride, and on this film or in place of this film silicon nitride and/or boron nitride is coated.
摘要翻译：一种用于低熔点熔融金属的碳化硅材料，由重结晶碳化硅或氮化硅结合碳化硅组成，并含有总量为5重量％或更低的游离硅和氧化硅。更优选地，碳化硅材料在气相生长碳化硅或氮化硅的膜的表面上形成，并且在该膜上或代替该膜，氮化硅和/或氮化硼被涂覆。

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