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1. 发明申请

US20070186970A1 Solar cell and method of fabricating the same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20070186970A1
公开(公告)日：2007-08-16
申请号：US10556063
申请日：2004-03-29
申请人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
发明人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
IPC分类号： H01L31/00
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
摘要翻译：一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体含有小于10atm％的氢的膜。因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

2. 发明授权

US08030223B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08030223B2
公开(公告)日：2011-10-04
申请号：US12656360
申请日：2010-01-27
申请人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
发明人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
IPC分类号： H01L21/318 , H01L21/471
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
摘要翻译：一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体含有小于10atm％的氢的膜。因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

3. 发明申请

US20100173447A1 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100173447A1
公开(公告)日：2010-07-08
申请号：US12656360
申请日：2010-01-27
申请人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
发明人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
摘要翻译：一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体含有小于10atm％的氢的膜。因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

4. 发明授权

US6069094A Method for depositing a thin film 失效
标题翻译：沉积薄膜的方法
公开(公告)号：US6069094A
公开(公告)日：2000-05-30
申请号：US924304
申请日：1997-09-05
申请人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
发明人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/44 , C23C16/0236 , H01L21/28264 , H01L21/3185
摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.
摘要翻译：本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。在该预处理之后进行在基板表面上的薄膜沉积。热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV -1cm-2或更小，这是通过上述绝缘膜沉积工艺中的预处理所带来的。

5. 发明授权

US06349669B1 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction 失效
标题翻译：用于沉积薄膜的方法和装置以及具有半导体 - 绝缘体结的半导体器件
公开(公告)号：US06349669B1
公开(公告)日：2002-02-26
申请号：US09102665
申请日：1998-06-23
申请人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
发明人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
IPC分类号： C23C1600
CPC分类号： C23C16/44 , C23C16/0236 , H01L21/28264 , H01L21/3185
摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.
摘要翻译：本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。在该预处理之后进行在基板表面上的薄膜沉积。热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。而且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV-1cm-2或更低，这是通过上述绝缘膜沉积工艺中的预处理而得到的。

6. 发明授权

US06723664B2 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction 有权
标题翻译：用于沉积薄膜的方法和装置以及具有半导体 - 绝缘体结的半导体器件
公开(公告)号：US06723664B2
公开(公告)日：2004-04-20
申请号：US10041609
申请日：2002-01-10
申请人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
发明人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
IPC分类号： H01L2131
CPC分类号： C23C16/44 , C23C16/0236 , H01L21/28264 , H01L21/3185
摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.
摘要翻译：本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。在该预处理之后进行在基板表面上的薄膜沉积。热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面密度为10 12 eV -1 cm -2以下，这是通过上述预处理在绝缘体中产生的薄膜沉积工艺。

7. 发明授权

US06703254B2 Method for manufacturing semiconductor laser device 有权
标题翻译：制造半导体激光器件的方法
公开(公告)号：US06703254B2
公开(公告)日：2004-03-09
申请号：US10111280
申请日：2002-04-22
申请人： Kimihiko Saitoh , Akira Izumi , Hideki Matsumura
发明人： Kimihiko Saitoh , Akira Izumi , Hideki Matsumura
IPC分类号： H01L2100
CPC分类号： H01S5/028 , H01S5/0202 , H01S5/0282
摘要： A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.
摘要翻译：包含阱层的半导体薄膜层叠在半导体衬底上，半导体衬底和半导体薄膜被切割，并且通过劈裂获得的半导体衬底和半导体薄膜的解理面暴露于在加热的催化物质的存在下，通过分解含有N-原子的气体产生的气氛，从而去除了解理面的表面层，并且在表面上形成氮化物层。随后，在解理面上形成电介质膜。根据上述技术，可以去除在解理面上形成的天然氧化物膜，并且也可以使用催化CVD装置形成保护膜。

8. 发明授权

US07942976B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07942976B2
公开(公告)日：2011-05-17
申请号：US11866457
申请日：2007-10-03
申请人： Katsuhiko Miya , Akira Izumi
发明人： Katsuhiko Miya , Akira Izumi
IPC分类号： H01L21/304 , B08B3/00
CPC分类号： H01L21/02057 , B08B7/0014 , H01L21/0209 , H01L21/67051 , Y10S134/902
摘要： A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.
摘要翻译：冲洗液供应商包括温度调节器。温度调节器将DIW冷却至低于室温的温度。该温度调节器例如将DIW冷却至不高于10摄氏度的温度，并且更优选冷却至更低的5摄氏度或更低的温度。同时，温度调节器将DIW维持在不低于摄氏0度，防止DIW冻结。供给到冲洗液管的冷却的DIW从冲洗液体排出喷嘴朝向基板的上表面排出，从而形成液膜。此外，冷却的DIW经由液体供给管从液体排出喷嘴朝向基板的后表面排出，从而在后表面上形成液膜。由于液膜已经被冷却，所以当冷却气体朝向基板的顶表面和后表面排出时，它们在短时间内被冷冻。

9. 发明授权

US07576413B2 Packaged stacked semiconductor device and method for manufacturing the same 有权
标题翻译：封装堆叠半导体器件及其制造方法
公开(公告)号：US07576413B2
公开(公告)日：2009-08-18
申请号：US11576323
申请日：2005-11-29
申请人： Masamichi Ishihara , Akira Izumi
发明人： Masamichi Ishihara , Akira Izumi
IPC分类号： H01L29/40
CPC分类号： H01L21/76898 , H01L23/3114 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06575 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01046 , H01L2924/01047 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/19041 , H01L2924/00 , H01L2224/48 , H01L2224/05599 , H01L2924/01005
摘要： The present invention provides a packaged stacked semiconductor device which includes bumps serving as external electrode terminals, the bumps being provided on both a front surface and a back surface of the device, and which is sacked on another semiconductor device, substrate, or board having electrode terminals so that the bumps are directly and electrically connected to the electrode terminals. The semiconductor device includes a semiconductor substrate having through-electrodes formed therein. The semiconductor device has, on the front surface side of the semiconductor substrate, a wiring layer connected to the through-electrodes, an insulating film formed on the wiring layer, additional wiring formed on the insulating film, post electrodes connected to the wiring, and external connection bumps connected to the post electrodes. The semiconductor device has, on the back surface side of the semiconductor substrate, an insulating film formed so as to cover the back surface of the semiconductor substrate, exclusive of tip end portions of the through-electrodes, wiring which is formed on the insulating film and to which the through-electrodes are connected, and external connection bumps connected to the wiring.
摘要翻译：本发明提供了一种封装的堆叠半导体器件，其包括用作外部电极端子的凸块，该凸块设置在该器件的前表面和后表面上，并且被分解在另一半导体器件，衬底或具有电极的板上端子，使得凸块直接和电连接到电极端子。半导体器件包括其中形成有贯通电极的半导体衬底。半导体装置在半导体基板的表面侧具有与贯通电极连接的布线层，形成在布线层上的绝缘膜，形成在绝缘膜上的附加布线，连接到布线的柱电极，以及连接到柱电极的外部连接凸块。半导体装置在半导体基板的背面侧具有形成为覆盖半导体基板的背面的绝缘膜，不包括贯通电极的前端部，在绝缘膜上形成的布线并且连接有贯通电极的外部连接凸点和与布线连接的外部连接凸块。

10. 发明申请

US20080078426A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20080078426A1
公开(公告)日：2008-04-03
申请号：US11860173
申请日：2007-09-24
申请人： Katsuhiko MIYA , Akira Izumi
发明人： Katsuhiko MIYA , Akira Izumi
IPC分类号： B08B3/10
CPC分类号： H01L21/67051 , H01L21/67028 , Y10S134/902
摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.
摘要翻译：从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印。

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