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1. 发明授权

US4837526A Semiconductor external optical modulator 失效
标题翻译：半导体外部光调制器
公开(公告)号：US4837526A
公开(公告)日：1989-06-06
申请号：US42433
申请日：1987-04-24
申请人： Masatoshi Suzuki , Yukio Noda , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Masatoshi Suzuki , Yukio Noda , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： G02F1/015 , G02F1/025
CPC分类号： G02F1/025 , G02F2001/0154 , G02F2001/0157 , G02F2203/25 , G02F2203/255
摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.
摘要翻译：公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是降至基本为零。

2. 发明授权

US4820655A Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效
标题翻译：具有光波导区域的半导体光集成器件的制造方法
公开(公告)号：US4820655A
公开(公告)日：1989-04-11
申请号：US15953
申请日：1987-02-18
申请人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： H01L27/15 , G02B6/122 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01L21/20 , H01L21/203 , H01L21/205
CPC分类号： H01S5/0265 , H01S5/1021 , H01S5/12
摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.
摘要翻译：一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。

3. 发明授权

US4811353A Semiconductor optical modulator 失效
标题翻译：半导体光调制器
公开(公告)号：US4811353A
公开(公告)日：1989-03-07
申请号：US15954
申请日：1987-02-18
申请人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Yukio Noda , Masatoshi Suzuki , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： G02B6/12 , G02F1/015 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S3/19 , H01S3/10
CPC分类号： H01S5/16 , G02F1/025 , H01S5/0265 , H01S5/12 , H01S5/164 , H01S5/168
摘要： A semiconductor optical modulator is disclosed which is capable of high-speed modulation without the necessity of increasing the modulating voltage. The present invention has its feature in that the carrier density of the clad layer adjoining the optical waveguide layer 3 is gradually raised toward the p-n junction or Schottky junction, thereby increasing the width of the depletion layer to decrease the junction capacitance.
摘要翻译：公开了一种能够高速调制而不需要增加调制电压的半导体光调制器。本发明的特征在于，与光波导层3相邻的包层的载流子密度朝向p-n结或肖特基结逐渐升高，从而增加耗尽层的宽度以降低结电容。

4. 发明授权

US4720835A Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output 失效
标题翻译：具有振荡波长和相位调制光输出的集成半导体发光元件
公开(公告)号：US4720835A
公开(公告)日：1988-01-19
申请号：US767152
申请日：1985-08-19
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Yukitoshi Kushiro
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Yukitoshi Kushiro
IPC分类号： G02F1/025 , H01S5/00 , H01S5/062 , H01S5/0625 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/164 , H01S5/06258 , H01S5/12 , H01S5/06236 , H01S5/06246 , H01S5/124
摘要： A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.
摘要翻译：公开了一种半导体发光元件，其设置有具有由周期性波纹形成的衍射光栅的发光区域，具有与发光区域直接光学连接的外部波导层的调制区域和与pn结分离的pn结的发光区域和由与发光区域的发光层相比能量间隙大的半导体形成的窗口区域，并且从发光区域和外部波导层的至少一端延伸。通过利用电光效应来改变外部波导的折射率，从而精确地控制或调制在单个波长处稳定振荡的光的频率或相位。特别地，当窗口区仅形成在发光区域的外部时，进行频率调制，并且当至少在调制区域外部形成窗口区域时，进行相位调制。

5. 发明授权

US4731641A Avalanche photo diode with quantum well layer 失效
标题翻译：具有量子阱层的雪崩光电二极管
公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译：具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高，多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。

6. 发明授权

US4743087A Optical external modulation semiconductor element 失效
标题翻译：光外部调制半导体元件
公开(公告)号：US4743087A
公开(公告)日：1988-05-10
申请号：US739477
申请日：1985-05-30
申请人： Katsuyuki Utaka , Shigeyuki Akiba , Yukitoshi Kushiro , Yukio Noda
发明人： Katsuyuki Utaka , Shigeyuki Akiba , Yukitoshi Kushiro , Yukio Noda
IPC分类号： G02B6/00 , G02B6/34 , G02F1/19 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S3/19
CPC分类号： H01S5/0265 , H01S5/12 , H01S5/16 , H01S5/164
摘要： An optical modulation element is disclosed in which a diffraction grating is formed along a waveguide for guiding unmodulated incident light and inclined to the direction of travel of the light, and a structure is provided for changing the refractive index of the waveguide portion where the diffraction grating is formed. the refractive index of the waveguide portion can be effected by voltage application, by current injection or by light irradiation.
摘要翻译：公开了一种光调制元件，其中衍射光栅沿着波导形成以引导未调制的入射光并且倾斜于光的行进方向，并且提供了用于改变波导部分的折射率的结构，其中衍射光栅形成了。波导部分的折射率可以通过电压施加，电流注入或光照射来实现。

7. 发明授权

US4811352A Semiconductor integrated light emitting device 失效
标题翻译：半导体集成发光器件
公开(公告)号：US4811352A
公开(公告)日：1989-03-07
申请号：US147229
申请日：1988-01-22
申请人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Yukitoshi Kushiro
发明人： Masatoshi Suzuki , Shigeyuki Akiba , Hideaki Tanaka , Yukitoshi Kushiro
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/125 , H01S3/19 , H01L33/00
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/12
摘要： A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together.The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
摘要翻译：公开了一种半导体集成发光器件，其包括包括发光层的发光波导和直接耦合到发光波导的外部波导。根据本发明，发光波导和外部波导相互层叠在直接耦合在一起的区域附近。通过电吸收效应在外部波导管中调制来自发光波导的光输出的强度。

8. 发明授权

US4456998A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4456998A
公开(公告)日：1984-06-26
申请号：US266610
申请日：1981-05-22
申请人： Fujio Tanaka , Yasuyuki Okamura , Yukitoshi Kushiro , Chuichi Ota , Shigeyuki Akiba
发明人： Fujio Tanaka , Yasuyuki Okamura , Yukitoshi Kushiro , Chuichi Ota , Shigeyuki Akiba
IPC分类号： H01S5/223 , H01S3/19
CPC分类号： H01S5/2231
摘要： A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.
摘要翻译：一种半导体激光器，其包括InP的衬底，有源层和保持在其间的有源层的两个覆盖层，并且被构造成使得有源层的折射率可以大于两个覆盖层的折射率。在两个包覆层中的一个中，与有源层中的辐射区相邻的区域的折射率大于与有源层中的非辐射区域相邻的区域的折射率。另一个包覆层的折射率等于与辐射区域或非辐射区域相邻的所述上包层的区域的折射率。选择有源层的辐射区域的厚度和宽度，使得半导体激光器可以在基本横向模式下振荡。可以在活性层和两个包覆层中的一个之间进一步设置缓冲层。

9. 发明授权

US4992837A Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US4992837A
公开(公告)日：1991-02-12
申请号：US432641
申请日：1989-11-07
申请人： Kazuo Sakai , Yukitoshi Kushiro , Kohsuke Nishimura
发明人： Kazuo Sakai , Yukitoshi Kushiro , Kohsuke Nishimura
IPC分类号： H01L33/06 , H01L33/26 , H01L33/28 , H01S5/02 , H01S5/22 , H01S5/32 , H01S5/327 , H01S5/34 , H01S5/347
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01L33/26 , H01S5/32 , H01S5/34 , H01S5/021 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/322 , H01S5/327 , H01S5/3422 , H01S5/3428 , H01S5/347
摘要： A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystals of GaAsP. The active layer is made of at least one of II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor. The clad layer is made of II-transition metal-VI group compound semiconductor, which is lattice-matched to the active layer.
摘要翻译：发射蓝色和/或绿色光的发光半导体器件具有活性层和一对夹层有源层并且沉积在半导体衬底上的包层。衬底由GaAs，GaP，InP，Si，Ge，ZnSe和GaAsP的混晶中的一种制成。有源层由II-VI族化合物半导体，I-III-VI2族化合物半导体和II-IV-V2族化合物半导体中的至少一种制成。包层由与活性层晶格匹配的II-过渡金属-VI族化合物半导体制成。

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