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1. 发明授权

US06479312B1 Gallium phosphide luminescent device 失效
标题翻译：磷化镓发光装置
公开(公告)号：US06479312B1
公开(公告)日：2002-11-12
申请号：US09869266
申请日：2001-06-27
申请人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
发明人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
IPC分类号： H01L2100
CPC分类号： H01L33/025 , H01L33/30 , Y10S438/918
摘要： By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016/cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type GaP layer 14, the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer 13 below 1×1016/cm3 inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×1016/cm3 accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×1016/cm3 to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers 12 and 14.
摘要翻译：通过在n型GaP层12和p型GaP层14之间的pn结部分提供具有供体浓度和受主浓度两者的氮掺杂低载流子浓度层13，其控制在1×1016 / cm3以下，的GaP发光器件可以比传统的发光器件提高多达20至30％。抑制低载体浓度层13中的供体浓度和受体浓度低于1×10 16 / cm 3时，不可避免地会产生一个载流子浓度，其表示为两个浓度之间的差值，相应地低于1×10 16 / cm 3。通过抑制作为不发光中心的供体的浓度低于1×10 16 / cm 3，可以提高注入电子或空穴的发射效率，从而延长载体寿命; 并且通过伴随地将载流子浓度抑制在显着低于相邻层12和14中的水平。

2. 发明授权

US5731209A Method for the determination of nitrogen concentration in compound semiconductor 失效
标题翻译：化合物半导体氮浓度测定方法
公开(公告)号：US5731209A
公开(公告)日：1998-03-24
申请号：US614206
申请日：1996-03-12
申请人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
发明人： Masato Yamada , Munehisa Yanagisawa , Susumu Higuchi
IPC分类号： G01N21/31 , H01L21/66 , H01L33/30 , G01N21/59
CPC分类号： G01N21/31 , Y10T436/17 , Y10T436/176152
摘要： An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference .DELTA..alpha.(=.alpha..sub.N -.alpha.) in the absorption coefficient of light of a wavelength identical with the wavelength .lambda..sub.N due to the excitons under constraint in the isoelectronic trap between the semiconductors with (.alpha..sub.N) and without (.alpha.) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of .DELTA..alpha..
摘要翻译：提出了一种有效的方法来确定作为等电子阱添加的间接转移化合物半导体如磷化镓中的氮浓度。该方法利用这样一个事实，即由于激子在约束条件下，在与波长λN相同的波长的光的吸收系数中，氮浓度和差ΔTA（=αNa-α）之间保持相称性的良好相关性在具有（αN）和没有（α）氮的氮的半导体之间的等电子阱中。介绍了通过SIMS方法测定的氮浓度与DELTAα值之间的工作曲线。

3. 发明授权

US5985023A Method for growth of a nitrogen-doped gallium phosphide epitaxial layer 失效
标题翻译：氮掺杂磷化镓外延层生长方法
公开(公告)号：US5985023A
公开(公告)日：1999-11-16
申请号：US620158
申请日：1996-03-22
申请人： Susumu Higuchi , Masato Yamada , Munehisa Yanagisawa
发明人： Susumu Higuchi , Masato Yamada , Munehisa Yanagisawa
IPC分类号： C30B19/10 , C30B29/44 , H01L21/208 , H01L33/30
CPC分类号： H01L33/025 , H01L21/02392 , H01L21/0254 , H01L21/02543 , H01L21/0257 , H01L21/02625 , H01L21/02628 , H01L33/0062
摘要： While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.
摘要翻译：作为发光二极管材料的外延晶片中的氮掺杂的磷化镓外延层希望具有高浓度的氮以提高发光效率，本发明提供了一种可靠和有效的方法，通过在掺杂气氛中作为氮源的氨的浓度的增加来实现高氮浓度，这与普遍认识到氨浓度超过极限的增加相反，具有降低氮掺杂浓度的作用外延层。本发明的方法是基于这样的发现，即在外延层的生长速率和由此生长的外延层中的氮浓度之间保持指数关系。

4. 发明授权

US5603761A Liquid phase epitaxial growth method for carrying out the same 失效
标题翻译：液相外延生长法进行相同
公开(公告)号：US5603761A
公开(公告)日：1997-02-18
申请号：US510861
申请日：1995-08-03
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuji Yoshida , Masahiko Saito
IPC分类号： C30B19/00 , C30B19/06 , C30B29/44 , C30B35/00 , H01L21/208
CPC分类号： C30B19/064 , Y10T117/10 , Y10T117/1024
摘要： In an improved liquid phase epitaxial growth method and apparatus in which a plurality of substrates are placed in a deposition chamber having at least one first vent hole; a solution for liquid phase growth is held in a solution chamber having at least one second vent hole and at least two sub-chambers separated by a partition plate and communicated with each other via a communicating portion; and before the substrates and the solution for liquid phase growth are brought into contact with each other, the deposition chamber and the solution chamber are revolved for causing the solution for liquid phase growth to move through the communicating portion so as to increase and decrease the volume of space portions of the respective sub-chambers and thereby replacement of a heat-treatment gas in the deposition chamber and the solution chamber is undertaken to achieve heat treatment. With this heat-treatment, surface oxide films on the substrates and the solution are removed, thus making it possible to obtain a liquid phase epitaxial layer with excellent qualities.
摘要翻译：在改进的液相外延生长方法和装置中，其中多个基板被放置在具有至少一个第一通气孔的沉积室中; 用于液相生长的溶液被保持在具有至少一个第二通气孔的溶液室中，并且至少两个分隔开的隔板通过连通部分彼此连通; 在基板和液相生长用溶液彼此接触之前，使沉积室和溶液室旋转，使液相生长溶液移动通过连通部，从而增大和减小体积的各个副室的空间部分，由此更换沉积室和溶液室中的热处理气体以实现热处理。通过这种热处理，去除了基板上的表面氧化膜和溶液，从而可以获得具有优良品质的液相外延层。

5. 发明授权

US5514881A Gap light emitting device having a low carbon content in the substrate 失效
标题翻译：在基板中具有低碳含量的间隙发光器件
公开(公告)号：US5514881A
公开(公告)日：1996-05-07
申请号：US377132
申请日：1995-01-23
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yu K. Tamura , Akio Nakamura , Toshio Otaki
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yu K. Tamura , Akio Nakamura , Toshio Otaki
IPC分类号： H01L33/02 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/025 , H01L33/305
摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc, but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
摘要翻译：一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc，但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。

6. 发明授权

US5406093A Gap pure green light emitting element substrate 失效
标题翻译：间隙纯绿色发光元件基板
公开(公告)号：US5406093A
公开(公告)日：1995-04-11
申请号：US230538
申请日：1994-04-20
申请人： Masahisa Endo , Akio Nakamura , Susumu Higuchi
发明人： Masahisa Endo , Akio Nakamura , Susumu Higuchi
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/305
摘要： A GaP pure green light emitting element substrate comprising an n-type GaP layer 12 and a p-type GaP layer 14 formed on a GaP single crystal substrate 10, characterized by the fact that an intermediate GaP layer 13 is formed at the pn junction portion between said n-type GaP layer 12 and said p-type GaP layer 14, wherein said intermediate GaP layer has a donor concentration N.sub.D of less than 1.times.10.sup.-16 atoms/cm.sup.3 and an acceptor concentration N.sub.A nearly equal to the donor concentration N.sub.D. The thickness of the intermediate GaP layer 13 is in the range of 3-5 micrometers.
摘要翻译：一种GaP纯绿色发光元件基板，包括形成在GaP单晶衬底10上的n型GaP层12和p型GaP层14，其特征在于，在pn结部分形成中间GaP层13 在所述n型GaP层12和所述p型GaP层14之间，其中所述中间GaP层的供体浓度ND小于1×10-16原子/ cm3，受主浓度NA几乎等于供体浓度ND。中间GaP层13的厚度在3-5微米的范围内。

7. 发明授权

US5349208A GaP light emitting element substrate with oxygen doped buffer 失效
标题翻译： GaP发光元件衬底，带氧掺杂缓冲液
公开(公告)号：US5349208A
公开(公告)日：1994-09-20
申请号：US147480
申请日：1993-11-05
申请人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura
发明人： Munehisa Yanagisawa , Susumu Higuchi , Yuuki Tamura
IPC分类号： H01L33/12 , H01L33/30 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L33/305 , H01L24/32 , H01L2924/12036 , H01L2924/12041
摘要： To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.
摘要翻译：为获得GaP发光元件基板，其提供具有较低亮度色散和高亮度的GaP发光二极管。一种GaP发光元件基板，包括在n型GaP单晶衬底上依次层叠的n型GaP缓冲层，n型GaP层和p型GaP层，其中，型GaP缓冲层保持在6×10 15 [原子/ cc]以下。

8. 发明授权

US5234534A Liquid-phase growth process of compound semiconductor 失效
标题翻译：化合物半导体的液相生长过程
公开(公告)号：US5234534A
公开(公告)日：1993-08-10
申请号：US719331
申请日：1992-07-27
申请人： Munehisa Yanagisawa , Akio Nakamura , Toshio Otaki , Susumu Higuchi
发明人： Munehisa Yanagisawa , Akio Nakamura , Toshio Otaki , Susumu Higuchi
IPC分类号： C30B19/00 , C30B19/04 , C30B19/10 , C30B27/00 , C30B29/44 , H01L21/208
CPC分类号： C30B19/10 , C30B19/04 , C30B29/44 , C30B7/005 , Y10S117/906
摘要： A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.

9. 发明申请

US20100240552A1 METHOD FOR EVALUATION OF DRUG SENSITIVITY BY ANALYSIS OF POMC GENE 审中-公开
标题翻译：通过POMC基因分析评估药物敏感性的方法
公开(公告)号：US20100240552A1
公开(公告)日：2010-09-23
申请号：US12597028
申请日：2008-04-25
申请人： Kazutaka Ikeda , Shinya Kasai , Masakazu Hayashida , Susumu Higuchi
发明人： Kazutaka Ikeda , Shinya Kasai , Masakazu Hayashida , Susumu Higuchi
IPC分类号： C12Q1/68 , C07H21/04 , C40B40/06
CPC分类号： C12Q1/6883 , C12Q2600/156
摘要： The present invention provides a method for predicting the difference in drug sensitivity among individuals by using a genetic polymorphism of the POMC gene. Specifically, the present invention provides a method for evaluating drug sensitivity, comprising associating a genetic polymorphism of POMC gene with an individual drug sensitivity.
摘要翻译：本发明提供一种通过使用POMC基因的遗传多态性预测个体间药物敏感性差异的方法。具体而言，本发明提供药物敏感性评价方法，其特征在于，将POMC基因的遗传多态性与个体药物敏感性相关联。

10. 发明授权

US06433365B1 Epitaxial wafer and light emitting diode 失效
标题翻译：外延晶片和发光二极管
公开(公告)号：US06433365B1
公开(公告)日：2002-08-13
申请号：US09298097
申请日：1999-04-22
申请人： Toru Takahashi , Susumu Higuchi
发明人： Toru Takahashi , Susumu Higuchi
IPC分类号： H01L2715
CPC分类号： H01L33/40 , H01L33/025 , H01L33/20 , H01L33/38
摘要： An epitaxial wafer comprises epitaxial layers 3-6 formed on a main surface of a compound semiconductor single crystal substrate 2, wherein the epitaxial layer 3a on the main surface is exposed in a back surface of the compound semiconductor single crystal substrate 2, and an exposed portion 8 of the epitaxial layer 3a has a carrier concentration of 1×1017 cm−3 to 2×1018 cm−3. The epitaxial wafer provides for an ultra thin type light emitting diode where generation of ohmic electrode failure is suppressed.
摘要翻译：外延晶片包括形成在化合物半导体单晶衬底2的主表面上的外延层3-6，其中主表面上的外延层3a在化合物半导体单晶衬底2的背面露出，外延层3a的部分8的载流子浓度为1×10 17 cm -3〜2×10 18 cm -3。外延晶片提供了抑制欧姆电极故障的产生的超薄型发光二极管。

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