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1. 发明授权

US06479312B1 Gallium phosphide luminescent device 失效
标题翻译：磷化镓发光装置
公开(公告)号：US06479312B1
公开(公告)日：2002-11-12
申请号：US09869266
申请日：2001-06-27
申请人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
发明人： Masato Yamada , Susumu Higuchi , Kousei Yumoto , Makoto Kawasaki , Ken Aihara
IPC分类号： H01L2100
CPC分类号： H01L33/025 , H01L33/30 , Y10S438/918
摘要： By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×1016/cm3 at a p-n junction portion between an n-type GaP layer 12 and a p-type GaP layer 14, the luminance of the GaP light emitting device can be improved by as much as 20 to 30% over the conventional one. Suppressing the donor concentration and the acceptor concentration in the low carrier concentration layer 13 below 1×1016/cm3 inevitably gives a carrier concentration, which is expressed as a difference between both concentrations, lower than 1×1016/cm3 accordingly. The emission efficiency upon injection of electrons or holes can be improved by suppressing the concentration of the donor which serves as non-emissive center below 1×1016/cm3 to thereby extend the carrier lifetime; and by concomitantly suppressing the carrier concentration at a level significantly lower than that in the adjacent layers 12 and 14.
摘要翻译：通过在n型GaP层12和p型GaP层14之间的pn结部分提供具有供体浓度和受主浓度两者的氮掺杂低载流子浓度层13，其控制在1×1016 / cm3以下，的GaP发光器件可以比传统的发光器件提高多达20至30％。抑制低载体浓度层13中的供体浓度和受体浓度低于1×10 16 / cm 3时，不可避免地会产生一个载流子浓度，其表示为两个浓度之间的差值，相应地低于1×10 16 / cm 3。通过抑制作为不发光中心的供体的浓度低于1×10 16 / cm 3，可以提高注入电子或空穴的发射效率，从而延长载体寿命; 并且通过伴随地将载流子浓度抑制在显着低于相邻层12和14中的水平。

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