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1. 发明授权

US08383000B2 Substrate processing apparatus, method for measuring distance between electrodes, and storage medium storing program 有权
标题翻译：基板处理装置，电极之间的距离测量方法和存储介质存储程序
公开(公告)号：US08383000B2
公开(公告)日：2013-02-26
申请号：US12958877
申请日：2010-12-02
申请人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
发明人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： G01B21/16 , H01J37/32091 , H01J37/32568 , H01L21/68742
摘要： A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.
摘要翻译：可以通过使用升降器来精确地测量电极之间的距离。基板处理装置包括在处理室102内彼此面对的上电极120和下电极310; 升降销332，其能够从下部电极下方伸出并收缩，并提升安装在下部电极上的与下部电极分离的基板; 升降器330，其升降销升降; 以及控制器400，其通过驱动升降器而将升降销向上升高并使提升销与上电极接触，同时基板未安装在下电极上并且基于升降器的移动距离来测量电极之间的距离。

2. 发明授权

US09455125B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09455125B2
公开(公告)日：2016-09-27
申请号：US13070115
申请日：2011-03-23
申请人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
发明人： Akihiro Yoshimura , Tetsuji Sato , Masato Horiguchi , Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32568
摘要： Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.
摘要翻译：公开了一种能够抑制在圆筒形室的一侧的移动电极与端壁之间的空间中产生等离子体的基板处理装置。基板处理装置包括用于容纳晶片的圆柱形室，可沿着室内的室的中心轴线移动的喷头，与腔室中的淋浴喷头相对的基座，以及柔性波纹管，其将淋浴头连接到所述室，其中向所述淋浴喷头和所述基座之间呈现的处理空间施加高频功率，将处理气体引入所述处理空间中，所述淋浴喷头和所述室的侧壁彼此不接触，并且旁路部件被安装成电连接淋浴头和盖子或室的侧壁。

3. 发明授权

US08592319B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08592319B2
公开(公告)日：2013-11-26
申请号：US13167574
申请日：2011-06-23
申请人： Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi , Jun Oyabu
发明人： Nobuhiro Wada , Makoto Kobayashi , Hiroshi Tsujimoto , Jun Tamura , Mamoru Naoi , Jun Oyabu
IPC分类号： H01L21/3065
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/3255 , H01J37/32568
摘要： A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.
摘要翻译：基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电连接到地面并且可相对于基座移动。基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。因此，改变了上电极和基座之间的等离子体密度。

4. 发明申请

US20110132873A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MEASURING DISTANCE BETWEEN ELECTRODES, AND STORAGE MEDIUM STORING PROGRAM 有权
标题翻译：基板处理装置，电极之间的距离测量方法和存储介质存储程序
公开(公告)号：US20110132873A1
公开(公告)日：2011-06-09
申请号：US12958877
申请日：2010-12-02
申请人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
发明人： Hiroshi Tsujimoto , Makoto Kobayashi , Jun Tamura , Nobuhiro Wada
IPC分类号： H01L21/02 , B05C11/00 , C23F1/00 , C23C16/52
CPC分类号： G01B21/16 , H01J37/32091 , H01J37/32568 , H01L21/68742
摘要： A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.
摘要翻译：可以通过使用升降器来精确地测量电极之间的距离。基板处理装置包括在处理室102内彼此面对的上电极120和下电极310; 升降销332，其能够从下部电极下方伸出并收缩，并提升安装在下部电极上的与下部电极分离的基板; 升降器330，其升降销升降; 以及控制器400，其通过驱动升降器而将升降销向上升高并使提升销与上电极接触，同时基板未安装在下电极上并且基于升降器的移动距离来测量电极之间的距离。

5. 发明申请

US20050190539A1 Electronic control device 有权
标题翻译：电子控制装置
公开(公告)号：US20050190539A1
公开(公告)日：2005-09-01
申请号：US10788897
申请日：2004-02-27
申请人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
发明人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
IPC分类号： H05K1/14 , H05K3/00 , H05K3/34 , H05K5/00 , H05K7/20
CPC分类号： H05K7/20854 , H05K1/144 , H05K3/0058 , H05K3/3447
摘要： An electronic control device enabling heat generated by a power module to be favorably radiated even in a high-temperature condition in an engine compartment. The unit includes a casing accommodating a control circuit substrate; a die-cast mounting plate forming a control circuit substrate support portion, a frame-like fitting member and an external mounting portion integrally together; and a metal substrate on which a power module is adhered. When the mounting plate is mounted on the wall of a transmission and the metal substrate is fitted in the opening in the bottom surface of the frame-like fitting member, a mounting surface in nearly the same plane is formed by the lower surface of the mounting plate and by the lower surface of the metal substrate permitting heat from the power module to be radiated to the wall.
摘要翻译：即使在发动机室内的高温状态下，也能够使由功率模块产生的热量良好地照射的电子控制装置。该单元包括容纳控制电路基板的外壳; 形成控制电路基板支撑部的压铸安装板，整体地一体地形成框架状的嵌合部件和外部安装部; 以及附着有电源模块的金属基板。当安装板安装在变速器的壁上并且金属基底装配在框架状装配构件的底表面中的开口中时，几乎相同的平面中的安装表面由安装板的下表面形成板和金属基板的下表面，允许来自功率模块的热量辐射到壁上。

6. 发明申请

US20050101140A1 Method of plasma etching 审中-公开
标题翻译：等离子体蚀刻方法
公开(公告)号：US20050101140A1
公开(公告)日：2005-05-12
申请号：US10949366
申请日：2004-09-27
申请人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
发明人： Tomoyo Yamaguchi , Kiwamu Fujimoto , Akinori Kitamura , Jae Jeong , Takashi Fuse , Machiko Obi , Nobuhiro Wada
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/32165
摘要： A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.
摘要翻译：等离子体蚀刻方法包括以下步骤：将在处理容器中引入的蚀刻气体激发成等离子体，蚀刻气体包括1,1,1,4,4,5,5,5-八氟-2-戊炔，并进行通过膜上的抗蚀剂掩模的开口图案对容纳在处理容器中的目标物体上的膜上的等离子体蚀刻。因此，可以进行具有高抗蚀性和/或抑制蚀刻停止的高选择性的等离子体蚀刻。

7. 发明授权

US07120024B2 Electronic control device 有权
标题翻译：电子控制装置
公开(公告)号：US07120024B2
公开(公告)日：2006-10-10
申请号：US10788897
申请日：2004-02-27
申请人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
发明人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
IPC分类号： H05K7/20
CPC分类号： H05K7/20854 , H05K1/144 , H05K3/0058 , H05K3/3447
摘要： An electronic control device enabling heat generated by a power module to be favorably radiated even in a high-temperature condition in an engine compartment. The unit includes a casing accommodating a control circuit substrate; a die-cast mounting plate forming a control circuit substrate support portion, a frame-like fitting member and an external mounting portion integrally together; and a metal substrate on which a power module is adhered. When the mounting plate is mounted on the wall of a transmission and the metal substrate is fitted in the opening in the bottom surface of the frame-like fitting member, a mounting surface in nearly the same plane is formed by the lower surface of the mounting plate and by the lower surface of the metal substrate permitting heat from the power module to be radiated to the wall.
摘要翻译：即使在发动机室内的高温状态下，也能够使功率模块产生的热量有利地辐射的电子控制装置。该单元包括容纳控制电路基板的壳体; 形成控制电路基板支撑部的压铸安装板，整体地一体地形成框架状的嵌合部件和外部安装部; 以及附着有电源模块的金属基板。当安装板安装在变速器的壁上并且金属基底装配在框架状装配构件的底表面中的开口中时，几乎相同的平面中的安装表面由安装板的下表面形成板和金属基板的下表面，允许来自功率模块的热量辐射到壁上。

8. 发明授权

US06967171B2 Insulation film etching method 有权
标题翻译：绝缘膜蚀刻方法
公开(公告)号：US06967171B2
公开(公告)日：2005-11-22
申请号：US10653707
申请日：2003-08-28
申请人： Kiwamu Fujimoto , Nobuhiro Wada
发明人： Kiwamu Fujimoto , Nobuhiro Wada
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/302
CPC分类号： H01L21/31116
摘要： The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film.When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.
摘要翻译：根据本发明的绝缘膜蚀刻方法防止了对绝缘膜的蚀刻的暂停，同时确保了对于掩模和基底膜的良好的各向异性（垂直）结构和高选择性。当使用CHF 3 / Ar / N 2 H 2混合气体的第一级等离子体蚀刻结束时，作为清洗气体的Ar气体从Ar气体供给源46与等离子体熄灭，由此处理容器10中的残余氢和氢化合物被吹扫气体旋转，以通过排气口10b通过排气管52排出。当清洗步骤完成时，第二步骤用C 4 N 8 N 8 / Ar / N 2 N 2混合气体进行等离子体蚀刻。

9. 发明申请

US20050112879A1 Insulation film etching method 有权
公开(公告)号：US20050112879A1
公开(公告)日：2005-05-26
申请号：US10653707
申请日：2003-08-28
申请人： Kiwamu Fujimoto , Nobuhiro Wada
发明人： Kiwamu Fujimoto , Nobuhiro Wada
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

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