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1. 发明授权

US07070829B2 Production method of gas sensor 有权
标题翻译：气体传感器的生产方法
公开(公告)号：US07070829B2
公开(公告)日：2006-07-04
申请号：US10386831
申请日：2003-03-12
申请人： Masashi Totokawa , Yorishige Matsuba , Yoshihisa Misawa , Hideyuki Gotoh , Katsuhisa Osako , Masaaki Oda , Norimichi Saito , Toshihiro Suzuki , Noriyuki Abe
发明人： Masashi Totokawa , Yorishige Matsuba , Yoshihisa Misawa , Hideyuki Gotoh , Katsuhisa Osako , Masaaki Oda , Norimichi Saito , Toshihiro Suzuki , Noriyuki Abe
IPC分类号： B05D5/12 , B05D3/02
CPC分类号： G01N27/12
摘要： To provide a method for producing a sensing film for gas sensors by sintering particles comprising a metal or a metal oxide on a substrate, where the sensing film for gas sensors having excellent sensor properties such as sensitivity and responsibility can be easily and simply formed. A nano-meter order particle (100), a dispersant (110) for preventing aggregation of the particles (100), and a scavenger (120) for trapping the dispersant (110) at the sintering are mixed in a solvent (130) to prepare a paste body (140), and this paste body (140) is coated on a base material and fired, thereby forming a sensing film.
摘要翻译：为了提供一种用于通过在基板上烧结包含金属或金属氧化物的颗粒来生产用于气体传感器的感测膜的方法，其中可以容易且简单地形成具有良好传感器特性如灵敏度和责任度的气体传感器用传感膜。将纳米级订单颗粒（100），用于防止颗粒（100）聚集的分散剂（110）和用于在烧结时捕获分散剂（110）的清除剂（120）在溶剂（130）中混合至制备糊体（140），将该膏体（140）涂覆在基材上并烧成，从而形成感测膜。

2. 发明授权

US08603920B2 Manufacturing method of semiconductor device including etching step 失效
标题翻译：包括蚀刻步骤的半导体器件的制造方法
公开(公告)号：US08603920B2
公开(公告)日：2013-12-10
申请号：US12805569
申请日：2010-08-05
申请人： Katsuhiko Kanamori , Masashi Totokawa , Hiroshi Tanaka
发明人： Katsuhiko Kanamori , Masashi Totokawa , Hiroshi Tanaka
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/005 , B81B2203/0136 , B81B2203/0315 , B81C1/00484 , B81C2201/0143 , H01L21/02532 , H01L21/02675 , H01L21/02691 , H01L21/32137
摘要： A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.
摘要翻译：半导体器件的制造方法包括：将激光束照射在单晶硅衬底上，并且将衬底上的激光束扫描以使得衬底的一部分多晶化，其中至少部分多晶结晶部分将衬底暴露在衬底的表面上; 并用蚀刻剂蚀刻基片的多晶化部分。在这种情况下，处理时间得到改善。

3. 发明申请

US20100288636A1 Laminated gas sensor and method of producing the same 审中-公开
标题翻译：层压气体传感器及其制造方法
公开(公告)号：US20100288636A1
公开(公告)日：2010-11-18
申请号：US12800285
申请日：2010-05-12
申请人： Masahiro Sone , Manabu Tomisaka , Masashi Totokawa
发明人： Masahiro Sone , Manabu Tomisaka , Masashi Totokawa
IPC分类号： G01N27/26 , B05D5/12
CPC分类号： G01N33/0037 , G01N27/4071 , Y02A50/245
摘要： A laminated gas sensor for exhaust gases improving thermal shock resistance, durability and reliability without permitting characteristics of the exhaust gas sensor to be particularly lowered is provided. A laminated gas sensor comprising a solid electrolyte layer (4) formed on one surface of a substrate (1) holding a lower electrode layer (3) therebetween, and an upper electrode layer (5) on the solid electrolyte layer (4), wherein the substrate (1) is a dense substrate made of at least one substrate material selected from silicon nitride, silicon carbide and aluminum nitride, and, as required, a thermal expansion buffer layer (8) is provided between the substrate (1) inclusive of at least part of the lower electrode layer (3) and the solid electrolyte layer (4), and the difference is not more than 5 ppm/° C. between the coefficient of thermal expansion of the solid electrolyte layer (4) and the coefficient of thermal expansion of the substrate (1) that comes in contact with at least part of the solid electrolyte layer (4) or of the thermal expansion buffer layer (8), and a method of producing the same.
摘要翻译：提供一种用于排气的层压气体传感器，其提高耐热冲击性，耐久性和可靠性，而不会使排气传感器的特性降低得特别低。一种层压气体传感器，其特征在于，在固定电解质层（4）上形成固体电解质层（4），所述固体电解质层（4）形成在保持下部电极层（3）的基板（1）的一个表面上，所述固体电解质层（4）基板（1）是由选自氮化硅，碳化硅和氮化铝的至少一种基板材料制成的致密基板，并且根据需要，在基板（1）之间设置热膨胀缓冲层（8）所述下部电极层（3）和所述固体电解质层（4）的至少一部分在所述固体电解质层（4）的热膨胀系数与所述固体电解质层（4）的系数之差为5ppm /℃以下与至少一部分固体电解质层（4）或热膨胀缓冲层（8）接触的基板（1）的热膨胀及其制造方法。

4. 发明申请

US20070185243A1 Conductive adhesive 有权
标题翻译：导电胶
公开(公告)号：US20070185243A1
公开(公告)日：2007-08-09
申请号：US10597937
申请日：2005-02-09
申请人： Nobuto Terada , Naoto Shioi , Masashi Totokawa , Yasunori Ninomiya
发明人： Nobuto Terada , Naoto Shioi , Masashi Totokawa , Yasunori Ninomiya
IPC分类号： C08L63/00 , B32B27/38
CPC分类号： C09J163/00 , C08G59/42 , C08L63/00 , C09J9/02 , H01B1/22 , H05K3/321 , H05K2201/0239
摘要： The present invention provides a conductive adhesive that is applicable as means for forming conductive junction to process for surface mounting of electronic parts for vehicle loading and process for the manufacture of the electronic parts per se for the purpose of substituting soldering therewith. The conductive adhesive according to the present invention is a conductive adhesive produced by dispersing a conductive medium, such as silver powder, in a binder resin component of a one-component epoxy thermosetting resin which has such a composition that the resin comprises, as essential components, an epoxy resin component composed mainly of an epoxy compound with a polycyclic aromatic ring skeleton, and a cyclic acid anhydride as a curing agent component thereof, and is further added with a coupling agent as an adherence imparting agent therefor.
摘要翻译：本发明提供一种导电粘合剂，其可用作用于形成用于车辆装载的电子部件的表面安装的用于形成导电结的装置和用于制造电子部件本身的工艺，以便用其代替焊接。根据本发明的导电粘合剂是通过将诸如银粉的导电介质分散在单组分环氧热固性树脂的粘合剂树脂组分中制成的导电粘合剂，其具有树脂包含的组成，作为必要组分，主要由具有多环芳族环骨架的环氧化合物组成的环氧树脂组分和环状酸酐作为其固化剂组分，并进一步加入偶联剂作为粘合赋予剂。

5. 发明申请

US20050128047A1 Pressure-sensitive resistor and pressure-sensitive sensor using the same 失效
标题翻译：压敏电阻和压敏传感器使用它
公开(公告)号：US20050128047A1
公开(公告)日：2005-06-16
申请号：US10808543
申请日：2004-03-25
申请人： Tomoyasu Watanabe , Kenichi Yanai , Masashi Totokawa , Yuuichi Sekine
发明人： Tomoyasu Watanabe , Kenichi Yanai , Masashi Totokawa , Yuuichi Sekine
IPC分类号： G01L1/20 , H01C10/10 , H01C17/065
CPC分类号： H01C17/06586 , H01C10/106 , H01C17/0652
摘要： A pressure-sensitive sensor includes two base films opposite to each other, a pair of electrodes provided on the two base films, and first and second pressure-sensitive resistors provided by two layers on the electrodes to form a predetermined gap therebetween. Further, a contact state between the first and second pressure-sensitive resistors is changed in accordance with a pressure applied to at least one of the base films, and a resistance between the electrodes is changed in accordance with the contact state between the pressure-sensitive resistors. In addition, each of the pressure-sensitive resistors is constructed with a binder resin having an elasticity modulus in a range between 10 and 1000 Mpa, and electrical conductive particles each of which is coated with a polymer. Accordingly, the pressure-sensitive sensor including the pressure-sensitive resistors can accurately detect a pressure in a range between 1 and 20 kPa.
摘要翻译：压敏传感器包括彼此相对的两个基底膜，设置在两个基底膜上的一对电极以及由电极上的两层提供的第一和第二压敏电阻器，以在它们之间形成预定间隙。此外，第一和第二压敏电阻器之间的接触状态根据施加到至少一个基膜的压力而改变，并且电极之间的电阻根据压敏电阻之间的接触状态而改变电阻此外，每个压敏电阻器由具有在10至1000Mpa范围内的弹性模量的粘合剂树脂和每个均涂覆有聚合物的导电颗粒构成。因此，包含压敏电阻的压敏传感器能够精确地检测1〜20kPa的范围内的压力。

6. 发明申请

US20110034031A1 Manufacturing method of semiconductor device including etching step 失效
标题翻译：包括蚀刻步骤的半导体器件的制造方法
公开(公告)号：US20110034031A1
公开(公告)日：2011-02-10
申请号：US12805569
申请日：2010-08-05
申请人： Katsuhiko Kanamori , Masashi Totokawa , Hiroshi Tanaka
发明人： Katsuhiko Kanamori , Masashi Totokawa , Hiroshi Tanaka
IPC分类号： H01L21/302
CPC分类号： B81C1/005 , B81B2203/0136 , B81B2203/0315 , B81C1/00484 , B81C2201/0143 , H01L21/02532 , H01L21/02675 , H01L21/02691 , H01L21/32137
摘要： A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.
摘要翻译：半导体器件的制造方法包括：将激光束照射在单晶硅衬底上，并且将衬底上的激光束扫描以使得衬底的一部分多晶化，其中至少部分多晶结晶部分将衬底暴露在衬底的表面上; 并用蚀刻剂蚀刻基片的多晶化部分。在这种情况下，处理时间得到改善。

7. 发明申请

US20070224511A1 Conductor composition, a mounting substrate and a mounting structure utilizing the composition 有权
公开(公告)号：US20070224511A1
公开(公告)日：2007-09-27
申请号：US11798797
申请日：2007-05-17
申请人： Masashi Totokawa , Yuji Ootani , Hirokazu Imai , Akira Shintai
发明人： Masashi Totokawa , Yuji Ootani , Hirokazu Imai , Akira Shintai
IPC分类号： H01M4/62
CPC分类号： H01L24/29 , C09J9/02 , C09J11/04 , H01L24/31 , H01L24/83 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/8384 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0665 , H01L2924/0781 , H01L2924/12044 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H05K1/095 , H05K1/113 , H05K3/321 , H05K3/4069 , H05K3/4614 , H05K2201/0257 , H05K2201/0266 , H05K2201/10636 , Y02P70/611 , Y10T29/49149 , Y10T29/49155 , Y10T156/1057 , Y10T428/29 , Y10T428/2982 , Y10T428/2991 , H01L2924/00 , H01L2924/01028 , H01L2924/00014
摘要： A conductor composition being able to easily secure the conductivity at the same level as an Ag bulk at low temperature process, a mounting substrate utilizing the conductor composition and a mounting structure utilizing the conductor composition are provided. In a mounting structure, wherein one or more electrodes (11) of a mounting substrate (10) and one or more surface mounting components (20) are connected through a conductor composition (30), and one or more surface wirings (14) of the mounting substrate (10), one or more inner-layer wirings (13) and one or more via conductors (12) are formed with the conductor composition, the conductor composition contains conductive particles with electrical conductivity, and the conductive particles are composed of low crystallized Ag fillers with the crystal size of 10 nm or less.

8. 发明申请

US20070074391A1 Method of producing circuit board 有权
标题翻译：电路板生产方法
公开(公告)号：US20070074391A1
公开(公告)日：2007-04-05
申请号：US11503896
申请日：2006-08-14
申请人： Masashi Totokawa , Yasunori Ninomiya
发明人： Masashi Totokawa , Yasunori Ninomiya
IPC分类号： H05K3/10 , H01K3/22
CPC分类号： H05K1/097 , H05K3/4069 , H05K3/4617 , H05K3/4632 , H05K2201/0129 , H05K2201/0266 , H05K2203/1131 , Y10T29/49126 , Y10T29/49128 , Y10T29/49155 , Y10T29/49163 , Y10T29/49165
摘要： A method of producing a circuit board includes a step of providing a conductive paste including metal nano-particles at an insulating substrate, and a step of sintering the conductive paste so as to form a circuit conductor. In the sintering step, the conductive paste is sintered in a low-oxygen condition including alcohol such that the metal nano-particles are sintered.
摘要翻译：制造电路板的方法包括在绝缘基板上提供包含金属纳米颗粒的导电糊料的步骤，以及烧结导电浆料以形成电路导体的步骤。在烧结步骤中，导电浆料在包含醇的低氧条件下烧结，使得金属纳米粒子被烧结。

9. 发明申请

US20050127536A1 Conductor composition, a mounting substrate and a mounting structure utilizing the composition 有权
标题翻译：导体组合物，安装基板和利用组合物的安装结构
公开(公告)号：US20050127536A1
公开(公告)日：2005-06-16
申请号：US10969320
申请日：2004-10-21
申请人： Masashi Totokawa , Yuji Ootani , Hirokazu Imai , Akira Shintai
发明人： Masashi Totokawa , Yuji Ootani , Hirokazu Imai , Akira Shintai
IPC分类号： C09J9/02 , C09J11/04 , H01B1/00 , H01B1/22 , H01L21/60 , H01L23/58 , H05K1/09 , H05K1/11 , H05K3/32 , H05K3/34 , H05K3/40 , H05K3/46
CPC分类号： H01L24/29 , C09J9/02 , C09J11/04 , H01L24/31 , H01L24/83 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/8384 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0665 , H01L2924/0781 , H01L2924/12044 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H05K1/095 , H05K1/113 , H05K3/321 , H05K3/4069 , H05K3/4614 , H05K2201/0257 , H05K2201/0266 , H05K2201/10636 , Y02P70/611 , Y10T29/49149 , Y10T29/49155 , Y10T156/1057 , Y10T428/29 , Y10T428/2982 , Y10T428/2991 , H01L2924/00 , H01L2924/01028 , H01L2924/00014
摘要： A conductor composition being able to easily secure the conductivity at the same level as an Ag bulk at low temperature process, a mounting substrate utilizing the conductor composition and a mounting structure utilizing the conductor composition are provided. In a mounting structure, wherein one or more electrodes (11) of a mounting substrate (10) and one or more surface mounting components (20) are connected through a conductor composition (30), and one or more surface wirings (14) of the mounting substrate (10), one or more inner-layer wirings (13) and one or more via conductors (12) are formed with the conductor composition, the conductor composition contains conductive particles with electrical conductivity, and the conductive particles are composed of low crystallized Ag fillers with the crystal size of 10 nm or less.
摘要翻译：提供一种导体组合物，其能够在低温处理下容易地确保与Ag体积相同的电导率，使用该导体组合物的安装基板和利用导体组合物的安装结构。在安装结构中，其中安装基板（10）的一个或多个电极（11）和一个或多个表面安装部件（20）通过导体组合物（30）连接，以及一个或多个表面布线（14）所述安装基板（10），一个或多个内层布线（13）和一个或多个通孔导体（12）由所述导体组合物形成，所述导体组合物包含具有导电性的导电颗粒，并且所述导电颗粒由结晶尺寸为10nm以下的低结晶性Ag填料。

10. 发明授权

US08703517B2 Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer 失效
标题翻译：制造包括移除改质层的半导体器件的方法
公开(公告)号：US08703517B2
公开(公告)日：2014-04-22
申请号：US13279409
申请日：2011-10-24
申请人： Atsushi Taya , Katsuhiko Kanamori , Masashi Totokawa
发明人： Atsushi Taya , Katsuhiko Kanamori , Masashi Totokawa
IPC分类号： H01L21/02
CPC分类号： B81C1/00476 , B23K26/361 , B23K26/40 , B23K26/53 , B23K2103/50 , B81B2201/0264 , B81C2201/0133 , C30B29/06 , C30B33/04 , C30B33/08 , G01P15/0802 , G01P15/125 , H01L21/268 , H01L21/30608
摘要： In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate.
摘要翻译：在半导体器件的制造方法中，制备包括单晶硅的衬底，在衬底中形成连续延伸的重整层，并且通过蚀刻去除重整层。形成重整层包括通过在激光束的基底中移动焦点的同时用脉冲激光束照射单晶硅的一部分来多晶化。

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