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1. 发明授权

US06898840B1 Method of fabricating a magnetic head device 失效
标题翻译：制造磁头装置的方法
公开(公告)号：US06898840B1
公开(公告)日：2005-05-31
申请号：US09506224
申请日：2000-02-17
申请人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
发明人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
IPC分类号： G11B5/012 , G11B5/40 , G11B5/48 , G11B5/60 , G11B33/14 , G11B5/53
CPC分类号： G11B5/486 , G11B5/012 , G11B5/40 , G11B5/4806 , G11B5/6011 , G11B33/142 , Y10T29/49025 , Y10T29/49027 , Y10T29/4913 , Y10T29/49144
摘要： A method of fabricating a magnetic head device comprising a slider having a magnetic head element, a suspension structure made of a thin resilient material and having one end supporting the slider and the other end to be attached to another member, and a head IC chip. The head IC chip is mounted on the suspension structure so as to face a magnetic recording disc and at a position spaced from the slider-supporting one end of the suspension structure by an intervening portion of the suspension structure. The position is selected so that the intervening portion is effective to suppress a temperature increase in the head IC chip due to at least thermal conduction through the intervening portion.
摘要翻译：一种制造磁头装置的方法，该磁头装置包括具有磁头元件的滑块，由弹性弹性材料制成的悬挂结构，并且具有一端支撑滑动件，另一端支撑于另一个构件，以及头IC芯片。头部IC芯片安装在悬挂结构上，以便面对磁记录盘，并且在与悬架结构的滑块支撑的一端间隔开悬挂结构的中间部分的位置处。选择位置使得中间部分有效地抑制由于至少通过中间部分的热传导而头部IC芯片的温度升高。

2. 发明授权

US6084746A Magnetic head device 失效
公开(公告)号：US6084746A
公开(公告)日：2000-07-04
申请号：US33789
申请日：1998-03-03
申请人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
发明人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
IPC分类号： G11B5/60 , G11B5/012 , G11B5/40 , G11B5/48 , G11B21/21 , G11B33/14
CPC分类号： G11B5/486 , G11B33/142 , G11B5/012 , G11B5/4806 , G11B5/40 , G11B5/6011
摘要： There is disclosed a magnetic disc device wherein temperature increase in the head IC chip can effectively suppressed. The magnetic head device comprises a slider having a magnetic head, a suspension structure having one end supporting the slider, and a head IC chip, the head IC chip being mounted on the suspension structure at a side adapted to be faced to a magnetic recording disc. A flow of air produced by the rotation of the magnetic disc cols the head IC chip in operation.

3. 发明授权

US06522502B1 Magnetic head device 有权
标题翻译：磁头装置
公开(公告)号：US06522502B1
公开(公告)日：2003-02-18
申请号：US09544303
申请日：2000-04-06
申请人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
发明人： Masashi Shiraishi , Izumi Nomura , Tsutomu Aoyama , Isamu Sato , Masanori Sakai , Tsuyoshi Umehara , Kenichi Takano , Haruyuki Morita
IPC分类号： G11B555
CPC分类号： G11B5/486 , G11B5/012 , G11B5/40 , G11B5/4806 , G11B5/6011 , G11B33/142
摘要： There is disclosed a magnetic disc device wherein temperature increase in the head IC chip can effectively suppressed. The magnetic head device comprises a slider having a magnetic head, a suspension structure having one end supporting the slider, and a head IC chip, the head IC chip being mounted on the suspension structure at a side adapted to be faced to a magnetic recording disc. A flow of air produced by the rotation of the magnetic disc cols the head IC chip in operation.
摘要翻译：公开了一种磁盘装置，其中可以有效地抑制头IC芯片中的温度升高。磁头装置包括具有磁头的滑块，具有支撑滑动件的一端的悬架结构以及头部IC芯片，头部IC芯片安装在悬挂结构的适于面对磁记录盘的一侧。通过磁盘的旋转而产生的空气流动使头IC芯片工作。

4. 发明申请

US20060196039A1 Novel abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的新型对接交换偏置设计
公开(公告)号：US20060196039A1
公开(公告)日：2006-09-07
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

5. 发明授权

US07275304B2 Method of forming a hard bias structure in a magnetic head 失效
标题翻译：在磁头中形成硬偏置结构的方法
公开(公告)号：US07275304B2
公开(公告)日：2007-10-02
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

6. 发明申请

US20060198059A1 Novel abutted exchange bias design for sensor stabilization 失效
公开(公告)号：US20060198059A1
公开(公告)日：2006-09-07
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

7. 发明授权

US07283337B2 Abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的基准交换偏置设计
公开(公告)号：US07283337B2
公开(公告)日：2007-10-16
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

8. 发明授权

US08881376B2 Method of manufacturing a perpendicular magnetic recording head laminated with AFM-FM phase change material 有权
标题翻译：制造用AFM-FM相变材料层叠的垂直磁记录头的方法
公开(公告)号：US08881376B2
公开(公告)日：2014-11-11
申请号：US13199179
申请日：2011-08-22
申请人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Kowang Liu , Kunliang Zhang , Liejie Guan , Moris Dovek , Joe Smyth
IPC分类号： G11B5/127 , G11B5/21 , G11B5/31 , G11B5/147
CPC分类号： G11B5/3113 , G11B5/1278 , G11B5/147 , G11B5/3146 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.
摘要翻译：公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过书写过程中加热。包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到写极点。

9. 发明授权

US08503271B2 Method of forming a plasmon antenna with magnetic core for thermally assisted magnetic recording 有权
标题翻译：用于磁辅助磁记录的磁芯形成等离子体天线的方法
公开(公告)号：US08503271B2
公开(公告)日：2013-08-06
申请号：US13551670
申请日：2012-07-18
申请人： Yuchen Zhou , Kenichi Takano , Xuhui Jin , Erhard Schreck , Moris Dovek , Joe Smyth
发明人： Yuchen Zhou , Kenichi Takano , Xuhui Jin , Erhard Schreck , Moris Dovek , Joe Smyth
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/02 , G11B5/3116 , G11B5/3146 , G11B5/6088 , G11B2005/0005 , G11B2005/0021 , Y10T29/49032
摘要： A method of forming a TAMR (Thermal Assisted Magnetic Recording) write head that uses the energy of optical-laser generated edge plasmons in a plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The method incorporates forming a magnetic core within the plasmon antenna, so the antenna effectively becomes an extension of the magnetic pole and produces a magnetic field whose maximum gradient overlaps the region being heated by the edge plasmons generated in the conducting layer of the antenna surrounding the antenna's magnetic core.
摘要翻译：一种形成TAMR（热辅助磁记录）写头的方法，其使用等离子体激元中的激光产生的边缘等离子体激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。该方法包括在等离子体激元天线内形成磁芯，因此天线有效地成为磁极的延伸，并产生磁场，其最大梯度与被天线周围的天线导电层中产生的边缘等离子体激发加热的区域重叠天线的磁芯。

10. 发明授权

US08432639B2 PMR writer with π shaped shield 有权
标题翻译： PMR作家与pi形盾
公开(公告)号：US08432639B2
公开(公告)日：2013-04-30
申请号：US12800039
申请日：2010-05-06
申请人： Yan Wu , Kenichi Takano , Moris Dovek
发明人： Yan Wu , Kenichi Takano , Moris Dovek
IPC分类号： G11B5/10 , G11B5/31
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/315 , G11B5/3163
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a pair of symmetrically separated side shields that extend from an edge of a trailing edge shield to form a shield with the shape of a π. The easy axis direction of the side shields is in the in-track direction. As a result, the side shields effectively shield the fringing fields of the magnetic pole tip from causing adjacent track erasures, while not adding their own fringing fields that could cause erasures even beyond adjacent tracks.
摘要翻译：垂直磁记录（PMR）头被制造成具有由一对对称分离的侧屏蔽横向屏蔽的极尖，该侧屏从后缘屏蔽的边缘延伸以形成具有pi形状的屏蔽。侧面屏蔽的易轴方向处于轨道内方向。结果，侧面屏蔽物有效地屏蔽磁极尖端的边缘区域而引起相邻的轨迹擦除，同时不添加它们自己的边缘区域，甚至可能导致相邻轨道之间的擦除。

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