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1. 发明申请

US20060178485A1 Hydrogenated diene copolymer, polymer composition, and molded object 审中-公开
标题翻译：氢化二烯共聚物，聚合物组合物和成型体
公开(公告)号：US20060178485A1
公开(公告)日：2006-08-10
申请号：US10548875
申请日：2004-03-12
申请人： Masashi Shimakage , Takashi Toyoizumi , Nobuyuki Toyoda , Kazuhisa Kodama
发明人： Masashi Shimakage , Takashi Toyoizumi , Nobuyuki Toyoda , Kazuhisa Kodama
IPC分类号： C08F297/02
CPC分类号： C08F297/04 , C08F8/04 , C08L53/025 , C08L2666/02
摘要： A hydrogenated diene-based copolymer satisfying predetermined conditions, which is obtained by hydrogenating a block copolymer containing at least two polymer blocks (A) composed mainly of a vinyl aromatic compound and at least one vinyl aromatic compound-conjugated diene compound copolymer block (B). The hydrogenated diene-based copolymer is per se superior in processability, flexibility, weather resistance, vibration-damping property and mechanical properties, and can provide a shaped article highly flexible and superior in various properties such as mechanical properties, appearance, mar resistance, weather resistance, heat resistance, vibration-damping property, processability and the like.
摘要翻译：通过氢化含有至少两个主要由乙烯基芳族化合物组成的聚合物嵌段（A）和至少一种乙烯基芳族化合物 - 共轭二烯化合物共聚物嵌段（B）的嵌段共聚物而获得的满足预定条件的氢化二烯系共聚物。氢化二烯类共聚物本身在加工性，柔软性，耐候性，抗振性和机械性方面都优异，并且可以提供高度柔性且在各种性能如机械性能，耐磨性，耐候性方面优异的成型制品电阻，耐热性，抗振性，加工性等。

2. 发明授权

US06838538B2 Hydrogenated modified polymer, process for producing the same and composition containing the same 有权
标题翻译：氢化改性聚合物，其制备方法和含有其的组合物
公开(公告)号：US06838538B2
公开(公告)日：2005-01-04
申请号：US10105317
申请日：2002-03-26
申请人： Takashi Toyoizumi , Motokazu Takeuchi , Masashi Shimakage , Nobuyuki Toyoda , Kazuhisa Kodama , Iwakazu Hattori
发明人： Takashi Toyoizumi , Motokazu Takeuchi , Masashi Shimakage , Nobuyuki Toyoda , Kazuhisa Kodama , Iwakazu Hattori
IPC分类号： C08F110/00 , C08C19/02 , C08C19/44 , C08F8/04 , C08F36/00 , C08F297/02 , C08F112/34
CPC分类号： C08F297/02 , C08C19/02 , C08C19/44 , C08F8/04 , C08F36/00 , C08F4/16
摘要： An objective of the present invention is to provide a hydrogenated modified polymer which can afford a molded body excellent in improvement in the balance among the impact resistance, the strength, the adherability and as the appearance, and a process for producing the same as well as a composition containing the same. Another objective is to provide a composition which can afford a molded body excellent in the balance among the flame retardancy, the tensile strength, the tensile extension, the heat resistance, the characteristic at low temperature, the insulation property, the pliability and the like. The hydrogenated modified polymer of the invention is a hydrogenated polymer of a modified conjugated diene-based polymer obtained by reacting an alkoxysilane compound to a polymer which is polymerized a conjugated diene or a conjugated diene and another monomer using an organic alkali metal compound as a polymerization initiator in an inert organic solvent such as cyclohexane and the like. The hydrogenated modified polymer composition of the invention contains the above-mentioned hydrogenated modified polymer and at least one selected from the group consisting of nonpolar polymer, polar polymer and filler.
摘要翻译：在通过使共轭二烯或共轭二烯和其它单体阴离子聚合而获得的共轭二烯系聚合物中氢化具有至少一个伯氨基和/或至少一个仲氨基的改性聚合物而获得的氢化改性聚合物。通过使用有机碱金属化合物作为聚合引发剂使共轭二烯或共轭二烯与其它单体聚合而得到的氢化改性聚合物，向得到的共轭二烯类聚合物中加入烷氧基硅烷化合物以终止反应得到改性聚合物，其被氢化。

3. 发明授权

US07234766B2 Vehicle roof structure 有权
标题翻译：车顶结构
公开(公告)号：US07234766B2
公开(公告)日：2007-06-26
申请号：US11300921
申请日：2005-12-15
申请人： Tadayuki Uchida , Harutaka Maruyama , Nobuyuki Toyoda , Etsuko Karube
发明人： Tadayuki Uchida , Harutaka Maruyama , Nobuyuki Toyoda , Etsuko Karube
IPC分类号： B62D25/06
CPC分类号： B60R9/058
摘要： In a vehicle roof structure, a roof panel has a central opening in which a roof glass is supported. A roof molding is mounted to molding mounting grooves that are formed along connecting portions between the roof panel and roof side rails extending along the roof panel. The roof molding includes a molding body and support legs. The molding body also includes: a lip portion that is formed at one side edge thereof and protrudes out of the molding mounting groove to cover a peripheral edge of the roof glass; and an inclined portion which is formed at the other side edge thereof and is inclined smoothly toward a bottom of the molding mounting groove. Therefore, the molding body continuously covers a region from the roof glass to the roof side rail, thereby improving the appearance, and further makes inconspicuous a recess defined by the molding mounting groove and the inclined portion, thereby minimizing the influence of the recess on the roof appearance, while rain water coming from the side of the roof panel is prevented from flowing over the roof side rail.
摘要翻译：在车顶结构中，屋顶板具有支撑屋顶玻璃的中心开口。安装屋顶模制件以模制安装槽，所述安装槽沿着顶板延伸的顶板和屋顶侧轨之间的连接部分形成。屋顶成型件包括成型体和支撑腿。成形体还包括：唇部，其形成在其一个侧边缘处并从成型安装槽突出以覆盖屋顶玻璃的周边边缘; 以及形成在其另一侧边缘的倾斜部分，并且朝着成型安装槽的底部平滑地倾斜。因此，成型体连续地覆盖从屋顶玻璃到屋顶侧轨道的区域，从而改善外观，并且进一步使由模制安装槽和倾斜部限定的凹部不显眼，从而最小化凹部对屋顶外观，同时防止从屋顶板侧面流出的雨水流过屋顶侧轨。

4. 发明申请

US20110046290A1 THERMOPLASTIC ELASTOMER COMPOSITION 有权
标题翻译：热塑性弹性体组合物
公开(公告)号：US20110046290A1
公开(公告)日：2011-02-24
申请号：US12921315
申请日：2009-03-05
申请人： Nobuyuki Toyoda , Kentarou Kanae , Hideo Nakanishi , Masato Kobayashi
发明人： Nobuyuki Toyoda , Kentarou Kanae , Hideo Nakanishi , Masato Kobayashi
IPC分类号： C08L47/00 , C08L23/08
CPC分类号： C08L23/08 , C08K5/01 , C08K5/14 , C08L23/0815 , C08L2205/02 , C08L2666/06
摘要： A thermoplastic elastomer composition that exhibits excellent rubber elasticity, etc. is obtained by dynamically heating a polymer composition in the presence of the crosslinking agent, the polymer composition including an α-olefin thermoplastic resin (A), and an oil-extended ethylene copolymer (B) that includes an ethylene copolymer that satisfies given conditions, and 50 to 150 parts by mass of a first mineral oil-based softener based on 100 parts by mass of the ethylene copolymer, the content of the oil-extended ethylene copolymer (B) being 30 mass % or more based on the total amount (=100 mass %) of the polymer component including the α-olefin thermoplastic resin (A) and the oil-extended ethylene copolymer (B).
摘要翻译：通过在交联剂的存在下动态加热聚合物组合物，包含α-烯烃热塑性树脂（A）和油延伸乙烯共聚物（A）的聚合物组合物，获得具有优异的橡胶弹性等的热塑性弹性体组合物 B），其包含满足规定条件的乙烯共聚物和基于100质量份乙烯共聚物的50〜150质量份的第一矿物油系软化剂，含油乙烯共聚物（B）的含量，基于包括α-烯烃热塑性树脂（A）和油延伸乙烯共聚物（B）的聚合物组分的总量（= 100质量％）为30质量％以上。

5. 发明授权

US4785202A Semiconductor integrated circuit device having an integrally formed bypass capacitor 失效
标题翻译：具有整体形成的旁路电容器的半导体集成电路器件
公开(公告)号：US4785202A
公开(公告)日：1988-11-15
申请号：US34948
申请日：1987-04-06
申请人： Nobuyuki Toyoda
发明人： Nobuyuki Toyoda
IPC分类号： H01L23/522 , H01L21/768 , H01L21/822 , H01L27/04 , H01L27/06 , H03K19/01
CPC分类号： H01L27/0605
摘要： A semiconductor integrated circuit device according to the present invention comprising an electric circuit formed in a semiconductor substrate, said circuit including first and second nodes between which a potential difference is provided, a wiring of a large ground capacitance connected to the first node, and a bypass capacitor connected to the second node, said wiring and bypass capacitor being of an integral structure prepared by laminating an upper conductor film pattern connected to the second node via an insulating film on a lower conductor film pattern connected to the first node. A MIM-structure in which a wiring and a bypass capacitor are made integral is employed in the semiconductor integrated circuit device of the present invention, making it possible to eliminate the large area required for forming the independent bypass capacitor. Also, the ratio of the ground capacitance of the wiring to the capacitance of the bypass capacitor is constant regardless of the change in the length of the wiring.
摘要翻译：根据本发明的半导体集成电路器件包括形成在半导体衬底中的电路，所述电路包括提供电位差的第一和第二节点，连接到第一节点的大接地电容的布线和连接到第二节点的旁路电容器，所述布线和旁路电容器是通过在连接到第一节点的下导体膜图案上经由绝缘膜层压连接到第二节点的上导体膜图案而制成的整体结构。在本发明的半导体集成电路器件中采用集成布线和旁路电容器的MIM结构，从而可以消除形成独立旁路电容器所需的大面积。此外，布线的接地电容与旁路电容器的电容的比率是恒定的，而与布线长度的变化无关。

6. 发明授权

US4569119A Manufacturing method of Schottky gate FET 失效
标题翻译：肖特基栅极FET的制造方法
公开(公告)号：US4569119A
公开(公告)日：1986-02-11
申请号：US618262
申请日：1984-06-07
申请人： Toshiyuki Terada , Nobuyuki Toyoda , Akimichi Hojo , Kiyoho Kamei
发明人： Toshiyuki Terada , Nobuyuki Toyoda , Akimichi Hojo , Kiyoho Kamei
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/338 , H01L29/417 , H01L29/47 , H01L29/80 , H01L29/812 , H01L21/265 , H01L21/24
CPC分类号： H01L29/66871 , H01L29/475 , H01L29/80 , H01L29/812
摘要： An etched SiO.sub.2 film component serving as a mask at the time of formation of source and drain electrodes in a surface layer of a GaAs substrate by means of ion implantation is side-etched before a gate electrode is formed. An SiO.sub.2 film component has a narrowed width smaller than a distance between the source and drain electrodes while the SiO.sub.2 film component supports a metal mask patterned film at its top surface. The SiO.sub.2 film component is replaced with a metal layer serving as a gate of a self-aligned Schottky gate FET. According to this method, a metal with high heat resistance need not be used as a metal material of the gate layer.
摘要翻译：在形成栅电极之前，通过离子注入在GaAs衬底的表面层中形成源电极和漏电极时用作掩模的蚀刻SiO 2膜成分被侧蚀刻。 SiO 2膜成分的宽度小于源电极和漏电极之间的距离，而SiO 2膜成分在其顶表面上支持金属掩模图案化膜。用作为自对准肖特基栅极FET的栅极的金属层代替SiO 2膜部件。根据该方法，不需要使用具有高耐热性的金属作为栅极层的金属材料。

7. 发明授权

US4472872A Method of fabricating a Schottky gate field effect transistor 失效
标题翻译：制造肖特基栅场效应晶体管的方法
公开(公告)号：US4472872A
公开(公告)日：1984-09-25
申请号：US523600
申请日：1983-08-16
申请人： Nobuyuki Toyoda , Toshiyuki Terada , Takamaro Mizoguchi , Akimichi Hojo
发明人： Nobuyuki Toyoda , Toshiyuki Terada , Takamaro Mizoguchi , Akimichi Hojo
IPC分类号： H01L21/338 , H01L29/417 , H01L29/80 , H01L29/812 , H01L21/24
CPC分类号： H01L29/66863 , H01L29/80 , H01L29/812
摘要： A Schottky gate FET is fabricated by forming on a semiconductor substrate first and second stacks facing each other. Each stack is constructed by an ohmic electrode and a spacer film. On the substrate having stacks formed thereon an insulation layer is formed and is anisotropically etched in the direction of its thickness until the planar surface portions are exposed. As a result, portions of the insulation layer remain on opposing side walls of the stacks. After removing the spacer films to define stepped portions between each remaining portion and each electrode, a layer of a metallic material capable of forming a Schottky barrier with the substrate is formed. The remaining portions are removed to pattern the metallic material layer, thereby forming a Shottky gate electrode.
摘要翻译：通过在半导体衬底上形成彼此相对的第一和第二堆叠来制造肖特基栅极FET。每个堆叠由欧姆电极和间隔膜构成。在其上形成有堆叠的基板上形成绝缘层，并在其厚度方向上各向异性地蚀刻，直到平面表面部分露出。结果，绝缘层的部分保留在堆叠的相对的侧壁上。在去除间隔膜以在每个剩余部分和每个电极之间限定台阶部分之后，形成能够与衬底形成肖特基势垒的金属材料层。除去其余部分以对金属材料层进行图案化，从而形成肖特基栅电极。

8. 发明授权

US4088514A Method for epitaxial growth of thin semiconductor layer from solution 失效
标题翻译：从溶液中外延生长薄半导体层的方法
公开(公告)号：US4088514A
公开(公告)日：1978-05-09
申请号：US675491
申请日：1976-04-09
申请人： Tohru Hara , Minoru Mihara , Nobuyuki Toyoda
发明人： Tohru Hara , Minoru Mihara , Nobuyuki Toyoda
IPC分类号： C30B19/06 , C30B19/08 , C30B19/10 , H01L21/208
CPC分类号： C30B19/065 , C30B19/08 , C30B19/10 , H01L21/02395 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628
摘要： Thin epitaxial layers of Group III-V semiconductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an ideally saturated solution of the semiconductor material in a metal melt preferably by keeping an undersaturated solution in contact with the crystalline semiconductor material at a predetermined temperature, supercooling the saturated solution and then bringing the supercooled solution into contact with a substrate. A growth boat assembly for this method has at least one set of two boats slidably stacked one upon another, wherein the upper boat has a solution reservoir and the lower boat has two depressions respectively for receiving therein the substrate and the crystalline semiconductor material as the source material at the saturation step, arranged such that a solution contained in the reservoir can selectively be contacted with either of the source material and the substrate and isolated from both.
摘要翻译： III-V族半导体材料的薄外延层由具有改善的厚度再现性和表面平滑度的溶液从具有以下步骤的方法生长，所述方法包括以下步骤：优选通过使不饱和溶液与不饱和溶液接触而在金属熔体中制备理想饱和的半导体材料溶液晶体半导体材料在预定温度下，使饱和溶液过冷却，然后使过冷溶液与基底接触。用于该方法的生长舟组件具有至少一组两个可滑动地堆叠在一起的两个船，其中上船具有溶液储存器，并且下船具分别具有两个凹陷，用于在其中接收基底和结晶半导体材料作为源在饱和步骤中的材料被布置为使得包含在储存器中的溶液可以选择性地与源材料和基底中的任一个接触并且与两者隔离。

9. 发明授权

US5097205A IC chip test circuit for high frequency integrated circuits 失效
标题翻译：用于高频集成电路的IC芯片测试电路
公开(公告)号：US5097205A
公开(公告)日：1992-03-17
申请号：US505607
申请日：1990-04-06
申请人： Nobuyuki Toyoda
发明人： Nobuyuki Toyoda
IPC分类号： G01R31/28 , G01R31/30 , G01R31/319 , G06F11/273 , H01L21/66 , H01L21/822 , H01L27/04
CPC分类号： G01R31/30 , G06F11/2733 , G01R31/31905
摘要： In an IC device, an IC body having a predetermined function and high-frequency circuits for testing high-frequency characteristics of the IC body are formed on a single chip. The test circuits include an L-H frequency conversion circuit arranged on the input side of the IC body and an H-L frequency conversion circuit arranged on the output side. The test circuits can switch a connecting state between the conversion circuits and the IC body in response to an external control signal. The test circuits can be disconnected from the IC body after a test is completed.

10. 发明授权

US4518871A Ga/As NOR/NAND gate circuit using enhancement mode FET's 失效
标题翻译： Ga / As使用增强型FET的NOR / NAND门电路
公开(公告)号：US4518871A
公开(公告)日：1985-05-21
申请号：US449997
申请日：1982-12-15
申请人： Nobuyuki Toyoda , Akimichi Hojo
发明人： Nobuyuki Toyoda , Akimichi Hojo
IPC分类号： H01L27/08 , H01L21/8232 , H01L27/06 , H03K19/094 , H03K19/0952 , H03K19/003 , H03K19/20
CPC分类号： H03K19/094 , H03K19/09407 , H03K19/0952
摘要： In an integrated logic circuit employing normally-off type FET's, it is difficult, but desirable to realize a NAND gate due to unwanted flow of the forward current to the next stage.In accordance with the invention, a stable NAND gate operation can be realized by introducing a NOR gate into all gate electrodes of the inputs of the NAND gate, except one gate electrode thereof of which source is grounded.
摘要翻译：在采用常闭型FET的集成逻辑电路中，由于正向电流不期望地流向下一级，实现NAND门是困难的。根据本发明，通过将NOR门引入NAND门的输入的所有栅电极，除了其源极接地的一个栅电极之外，可以实现稳定的NAND门操作。

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