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1. 发明授权

US07972704B2 Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom 有权
标题翻译：单晶碳化硅锭，以及从其获得的基板和外延晶片
公开(公告)号：US07972704B2
公开(公告)日：2011-07-05
申请号：US12735405
申请日：2009-01-14
申请人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
IPC分类号： B32B9/04
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm−3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译：本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。是含有浓度为2×1018 cm -3〜6×1020cm-3的供体型杂质和1×1018浓度的受主型杂质的单晶碳化硅单晶碳化硅锭 cm-3〜5.99×1020cm-3，其中施主型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，从其获得的基板和外延晶片。

2. 发明申请

US20110206929A1 SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE WAFER 有权
标题翻译：单晶硅碳化硅和单晶硅碳化硅
公开(公告)号：US20110206929A1
公开(公告)日：2011-08-25
申请号：US12998357
申请日：2009-10-14
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Masakazu Katsuno , Hiroshi Tsuge
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Masakazu Katsuno , Hiroshi Tsuge
IPC分类号： C01B31/36 , H01B1/04
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B25/00 , Y10T428/2918
摘要： The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm−3 to 6×1020 cm−3.
摘要翻译：本发明提供单晶碳化硅和质量好的单晶碳化硅晶片，其位错，微管和其他晶体缺陷低，并且当应用于器件时可实现高产率和高性能，其中掺杂比籽晶与生长晶体之间的界面的晶体生长方向的相反侧的元素浓度为5以下，晶种附近的生长晶体的掺杂元素浓度为2×10 19 cm -3〜 6×1020厘米-3。

3. 发明授权

US09691607B2 Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same 有权
公开(公告)号：US09691607B2
公开(公告)日：2017-06-27
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L21/02 , C30B25/10 , C30B29/36
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

4. 发明授权

US08936680B2 Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method 有权
标题翻译：具有用于制造单晶碳化硅的槽的坩埚容器和坩埚盖，制造装置和方法
公开(公告)号：US08936680B2
公开(公告)日：2015-01-20
申请号：US13138526
申请日：2010-02-25
申请人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
发明人： Masakazu Katsuno , Tatsuo Fujimoto , Hiroshi Tsuge , Masashi Nakabayashi
IPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L21/02
CPC分类号： C30B29/36 , C30B23/005 , H01L21/02378 , H01L21/02433 , H01L21/02529 , Y10T117/10
摘要： The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.
摘要翻译：提供一种用于制造单晶碳化硅的坩埚的本发明以及能够以高产率稳定地生长结晶度良好的单晶碳化硅锭的单晶碳化硅的制造装置和制造方法是用于生产具有用于保持碳化硅原料的坩埚容器和用于附着晶种的坩埚盖的单晶碳化硅的坩埚，并且适于使坩埚容器中的碳化硅原料升华以提供碳化硅升华气体在连接到坩埚盖上的籽晶上生长晶种上的单晶碳化硅，在坩埚容器中设置用于制造单晶碳化硅的坩埚，并将具有螺纹部的坩埚盖螺纹连接在一起具有能够通过相对旋转来调节流速的升华气体排出槽或沟槽加入部分并且是配备有这种坩埚的单晶碳化硅的制造装置和利用该装置的单晶碳化硅的制造方法。

5. 发明授权

US08044408B2 SiC single-crystal substrate and method of producing SiC single-crystal substrate 有权
标题翻译： SiC单晶衬底和SiC单晶衬底的制造方法
公开(公告)号：US08044408B2
公开(公告)日：2011-10-25
申请号：US12469299
申请日：2009-05-20
申请人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
发明人： Tatsuo Fujimoto , Kohei Tatsumi , Taizo Hoshino , Masakazu Katsuno , Noboru Ohtani , Masashi Nakabayashi , Hiroshi Tsuge , Housei Hirano , Hirokatsu Yashiro
IPC分类号： H01L29/15
CPC分类号： H01L21/02378 , C30B23/00 , C30B29/36 , H01L21/02529 , H01L21/02631
摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
摘要翻译：本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和稳定性。本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

6. 发明申请

US20090205565A1 APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE 有权
标题翻译：制造单晶碳化硅的装置
公开(公告)号：US20090205565A1
公开(公告)日：2009-08-20
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B15/10
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

7. 发明授权

US09777403B2 Single-crystal silicon carbide and single-crystal silicon carbide wafer 有权
公开(公告)号：US09777403B2
公开(公告)日：2017-10-03
申请号：US12998357
申请日：2009-10-14
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Masakazu Katsuno , Hiroshi Tsuge
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Masakazu Katsuno , Hiroshi Tsuge
IPC分类号： C30B29/36 , C30B23/00 , C30B25/00 , C30B23/02
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B25/00 , Y10T428/2918
摘要： A single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality are disclosed that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm−3 to 6×1020 cm−3.

8. 发明授权

US09068277B2 Apparatus for manufacturing single-crystal silicon carbide 有权
标题翻译：单晶碳化硅制造装置
公开(公告)号：US09068277B2
公开(公告)日：2015-06-30
申请号：US12416500
申请日：2009-04-01
申请人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
发明人： Masashi Nakabayashi , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno , Noboru Ohtani
IPC分类号： C30B23/00 , C30B29/36 , C30B35/00 , C30B23/06
CPC分类号： C30B29/36 , C30B23/00 , C30B23/066 , C30B35/00 , Y10T117/1068
摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
摘要翻译：本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度在较窄直径区域处，比垂直相邻区域处的绝缘材料大。用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

9. 发明授权

US08901570B2 Epitaxial silicon carbide single crystal substrate and process for producing the same 有权
标题翻译：外延碳化硅单晶基板及其制造方法
公开(公告)号：US08901570B2
公开(公告)日：2014-12-02
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/15 , H01L31/0312 , H01L21/02 , C30B25/02 , C30B29/36 , C30B25/18
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

10. 发明申请

US20130049014A1 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：外延硅碳化物单晶基板及其制造方法
公开(公告)号：US20130049014A1
公开(公告)日：2013-02-28
申请号：US13697211
申请日：2011-05-10
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/16 , C30B25/16
CPC分类号： H01L21/02433 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/02447 , H01L21/02507 , H01L21/02529 , H01L21/02573 , H01L21/0262
摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
摘要翻译：提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

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