专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120038435A1 ELASTIC WAVE APPARATUS 审中-公开
标题翻译：弹性波形装置
公开(公告)号：US20120038435A1
公开(公告)日：2012-02-16
申请号：US13282558
申请日：2011-10-27
申请人： Masaru YATA , Shinichi SOGOYA , Yasuhisa FUJII , Masakazu MIMURA
发明人： Masaru YATA , Shinichi SOGOYA , Yasuhisa FUJII , Masakazu MIMURA
IPC分类号： H03H9/17
CPC分类号： H03H9/0222 , H03H9/0085 , H03H9/14582
摘要： In an elastic wave apparatus, a first dielectric layer is laminated on a piezoelectric substrate. An electrode structure is provided at an interface between the first dielectric layer and the piezoelectric substrate. The electrode structure includes a first electrode structure of an elastic wave filter and a second electrode structure of elastic wave resonators. The elastic wave resonators are electrically connected to the elastic wave filter. An anti-resonant frequency at which the extreme impedance values of the elastic wave resonators are obtained is in a frequency band in which the higher-order mode spurious response of the elastic wave filter appears.
摘要翻译：在弹性波装置中，在压电基板上层叠第一电介质层。电极结构设置在第一电介质层和压电基板之间的界面处。电极结构包括弹性波滤波器的第一电极结构和弹性波谐振器的第二电极结构。弹性波谐振器电连接到弹性波滤波器。获得弹性波谐振器的极限阻抗值的反谐振频率处于出现弹性波滤波器的高阶模式杂散响应的频带。

2. 发明申请

US20090174284A1 BOUNDARY ACOUSTIC WAVE DEVICE 有权
标题翻译：边界声波装置
公开(公告)号：US20090174284A1
公开(公告)日：2009-07-09
申请号：US12409702
申请日：2009-03-24
申请人： Masakazu MIMURA , Yasuhisa FUJII , Masaru YATA , Norihiko NAKAHASHI
发明人： Masakazu MIMURA , Yasuhisa FUJII , Masaru YATA , Norihiko NAKAHASHI
IPC分类号： H03H9/25 , H01L41/04
CPC分类号： H03H9/0222 , H03H9/02559 , H03H9/14541
摘要： A boundary acoustic wave device includes a piezoelectric substance made of LiNbO3 having a surface obtained by rotating a Y axis by about 15°±10° as a primary surface, a dielectric substance which is made of a silicon oxide and which is laminated to the piezoelectric substance, and an electrode structure which is disposed at a boundary between the piezoelectric substance and the dielectric substance and which includes an IDT arranged to utilize a boundary acoustic wave propagating along the boundary. When the density of the IDT, the thickness thereof, the wavelength determined by the period of electrode fingers of the IDT, and the duty ratio thereof are represented by ρ (kg/m3), H (μm), λ(μm), and x, respectively, x and the product of H/λ and ρ are set in a range that satisfies the following formula (1): (H/λ)×ρ>70.7924(x+0.055)(−2.0884)+797.09 Formula (1).
摘要翻译：一种弹性边界波装置包括由具有通过使Y轴旋转大约15°±10°获得的表面的LiNbO 3制成的压电物质作为主表面，由氧化硅制成并且被压电物质和设置在压电体和电介质物质之间的边界处的电极结构，并且包括设置成利用沿边界传播的边界声波的IDT。当IDT的密度，其厚度，由IDT的电极指的周期确定的波长及其占空比由rho（kg / m3），H（mum），λ（mum）和 x，并且H /λ和rho的乘积被设定在满足下式（1）的范围内：<？in-line-formula description =“In-line Formulas”end =“lead”？> （H /λ）×70.7924（x + 0.055）（ - 2.0884）+797.09式（1）。<？in-line-formula description =“In-line Formulas”end =“tail”？>

3. 发明申请

US20120056506A1 BOUNDARY ACOUSTIC WAVE DEVICE 有权
标题翻译：边界声波装置
公开(公告)号：US20120056506A1
公开(公告)日：2012-03-08
申请号：US13293151
申请日：2011-11-10
申请人： Hajime KANDO , Masakazu MIMURA
发明人： Hajime KANDO , Masakazu MIMURA
IPC分类号： H01L41/047
CPC分类号： H03H9/0222 , H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A boundary acoustic wave device includes a first medium, a second medium laminated on the first medium, and an IDT electrode arranged at an interface between the first medium and the second medium. The boundary acoustic wave device further includes a reformed portion disposed in at least one of the first medium and the second medium, reformed by externally provided energy, and having frequency characteristics different from frequency characteristics exhibited when the boundary acoustic wave device includes only at least one of the first medium and the second medium.
摘要翻译：弹性边界波装置包括第一介质，层叠在第一介质上的第二介质和布置在第一介质和第二介质之间的界面处的IDT电极。弹性边界波装置还包括设置在第一介质和第二介质中的至少一个中的重整部分，由外部提供的能量重整，并且当弹性边界波装置仅包括至少一个时，具有与频率特性不同的频率特性的第一媒体和第二媒体。

4. 发明申请

US20100187947A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20100187947A1
公开(公告)日：2010-07-29
申请号：US12691791
申请日：2010-01-22
申请人： Masakazu MIMURA
发明人： Masakazu MIMURA
IPC分类号： H01L41/04 , H01L41/047 , H01L41/08
CPC分类号： H03H9/02669 , H03H9/0222 , H03H9/02559 , H03H9/02834 , H03H9/131
摘要： An acoustic wave device having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate made of LiNbO3, a SiO2 layer laminated on the piezoelectric substrate, and an IDT electrode disposed in an interface of the piezoelectric substrate and the SiO2 layer, wherein φ and θ of Euler angles expressed by (φ, θ, ψ) of LiNbO3 substrate satisfy φ=0° and 80°≦θ≦130°, respectively. The acoustic wave device using an acoustic wave primarily having an SH wave, wherein ψ is set to satisfy 5°≦ψ≦30°.
摘要翻译：具有改善的频率 - 温度特性并且其中高阶模式的杂散响应被抑制的声波装置包括由LiNbO 3制成的压电基板，层叠在压电基板上的SiO 2层和设置在压电基板的界面中的IDT电极压电衬底和SiO 2层，其中＆phgr; 和＆thetas; 由LiNbO3衬底的（＆phgr;＆amp; tt;ψ）表示的欧拉角分别满足＆= = 0°和80°＆nlE;＆amp; the; nlE; 130°。使用主要具有SH波的声波的声波装置，其中ψ被设定为满足5°＆lt; nlE;ψ＆nlE; 30°。

5. 发明申请

US20090302709A1 BOUNDARY ACOUSTIC WAVE DEVICE 有权
标题翻译：边界声波装置
公开(公告)号：US20090302709A1
公开(公告)日：2009-12-10
申请号：US12545229
申请日：2009-08-21
申请人： Masakazu MIMURA
发明人： Masakazu MIMURA
IPC分类号： H01L41/04
CPC分类号： H03H9/0222 , H03H9/02559 , H03H9/14538
摘要： A boundary acoustic wave device is capable of reducing insertion loss and the absolute value of the temperature coefficient of frequency (TCF). The boundary acoustic wave device utilizes a boundary acoustic wave propagating along the interface between a piezoelectric substance and a dielectric substance. The piezoelectric substance has a negative temperature coefficient of frequency and the dielectric substance has a positive temperature coefficient of frequency. IDT electrodes include a first conductive layer arranged on a side of the piezoelectric substance, a third conductive layer arranged on a side of the dielectric substance, and a second conductive layer arranged between the first and third conductive layers and composed of a metal having a lower density than those of the first and third conductive layers or an alloy primarily containing the metal. If thicknesses of the first, second, and third conductive layers are H1, H2, and H3, and a period of the IDT electrodes is λ, 0.04λ 0.009λ, H3>0.022λ, and 0.05λ
摘要翻译：一种边界声波装置能够降低插入损耗和频率温度系数（TCF）的绝对值。弹性边界波装置利用沿着压电物质和介电物质之间的界面传播的边界声波。压电体具有负温度系数，电介质具有正温度系数。 IDT电极包括布置在压电体的一侧的第一导电层，布置在电介质物质一侧的第三导电层，以及布置在第一和第三导电层之间的第二导电层，并且由具有较低密度高于第一和第三导电层或主要含有金属的合金。如果第一，第二和第三导电层的厚度为H1，H2和H3，并且IDT电极的周期为λ，则λλ
0.009λ，H3>0.022λ，和0.05λ

6. 发明申请

US20070013459A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20070013459A1
公开(公告)日：2007-01-18
申请号：US11531003
申请日：2006-09-12
申请人： Masakazu MIMURA , Tomohisa KOMURA , Norio TANIGUCHI , Takeshi NAKAO , Michio KADOTA
发明人： Masakazu MIMURA , Tomohisa KOMURA , Norio TANIGUCHI , Takeshi NAKAO , Michio KADOTA
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/02559 , H03H9/6433 , H03H9/6466 , H03H9/725
摘要： A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.
摘要翻译：表面声波分波器包括第一滤波器和第二滤波器，每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。在第一压电基板上设置有通带的频率范围相对较低的第一滤波器，在第二压电基板上设置通带频率相对较高的第二滤波器。第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底，第一压电基片的切割角大于第二压电基片的切割角。

你已经成功收藏专利！

检索式保存成功!

0.009λ，H3>0.022λ，和0.05λ

IPRDB

热门服务

关于我们

友情链接

联系方式

0.009λ，H3>0.022λ， 和0.05λ

IPRDB

热门服务

关于我们

友情链接

联系方式

0.009λ，H3>0.022λ，和0.05λ