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1. 发明申请

US20070013459A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20070013459A1
公开(公告)日：2007-01-18
申请号：US11531003
申请日：2006-09-12
申请人： Masakazu MIMURA , Tomohisa KOMURA , Norio TANIGUCHI , Takeshi NAKAO , Michio KADOTA
发明人： Masakazu MIMURA , Tomohisa KOMURA , Norio TANIGUCHI , Takeshi NAKAO , Michio KADOTA
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/02559 , H03H9/6433 , H03H9/6466 , H03H9/725
摘要： A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.
摘要翻译：表面声波分波器包括第一滤波器和第二滤波器，每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。在第一压电基板上设置有通带的频率范围相对较低的第一滤波器，在第二压电基板上设置通带频率相对较高的第二滤波器。第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底，第一压电基片的切割角大于第二压电基片的切割角。

2. 发明申请

US20080303379A1 SURFACE ACOUSTIC WAVE DEVICE 审中-公开
标题翻译：表面声波设备
公开(公告)号：US20080303379A1
公开(公告)日：2008-12-11
申请号：US12190618
申请日：2008-08-13
申请人： Yasuharu NAKAI , Kenji NISHIYAMA , Takeshi NAKAO , Masanori KATO , Michio KADOTA
发明人： Yasuharu NAKAI , Kenji NISHIYAMA , Takeshi NAKAO , Masanori KATO , Michio KADOTA
IPC分类号： H01L41/107
CPC分类号： H03H9/02559 , H03H9/0222
摘要： A surface acoustic wave device includes a LiNbO3 substrate having Euler angles (0°±5°, θ, 0°±10°), electrodes that are disposed on the LiNbO3 substrate, are primarily composed of Cu, and include an IDT electrode, a first silicon oxide film having substantially the same thickness as the electrodes and disposed in an area other than an area on which the electrodes including the IDT electrode are disposed, and a second silicon oxide film disposed on the electrodes and the first silicon oxide film, wherein the Euler angle θ and the normalized thickness H of the second silicon oxide film are selected to satisfy the formula 1 or 2: −50×H2−3.5×H+38.275≦{θ}≦10H+35 (wherein H 0.25) Formula 2.
摘要翻译：表面声波装置包括具有欧拉角（0°±5°，θ，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极主要由Cu组成，并且包括IDT电极，第一氧化硅膜具有与电极基本相同的厚度并且设置在除了包括IDT电极的电极的区域之外的区域中，以及设置在电极和第一氧化硅膜上的第二氧化硅膜，其中选择第二氧化硅膜的欧拉角θ和标准化厚度H以满足公式1或2：<？in-line-formula description =“In-line formula”end =“lead”？> - 50xH2- 3.5xH + 38.275 <=θθ<= 10H + 35（其中H <0.25）式1 <？在线公式描述=“在线公式”end =“tail”？> <？in-line- 公式描述=“在线公式”end =“lead”？> - 50xH2-3.5xH + 38.275 <= {θ} = 37.5（其中H> 0.25）公式2 <？in-line-formula description =“ 一致公式“end =”tail“？>

3. 发明申请

US20080296999A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：声波设备及其制造方法
公开(公告)号：US20080296999A1
公开(公告)日：2008-12-04
申请号：US12191451
申请日：2008-08-14
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译：表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面在比第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

4. 发明申请

US20070132339A1 SURFACE ACOUSTIC WAVE APPARATUS AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：US20070132339A1
公开(公告)日：2007-06-14
申请号：US11674928
申请日：2007-02-14
申请人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H03H9/25
CPC分类号： H03H9/02929 , H03H3/10 , H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49016 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

5. 发明申请

US20120104897A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20120104897A1
公开(公告)日：2012-05-03
申请号：US13347730
申请日：2012-01-11
申请人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H01L41/047
CPC分类号： H03H9/02669
摘要： A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.
摘要翻译：表面声波装置即使在使用较高频率的情况下，也可以防止产量的降低和可靠性的降低，例如脉冲耐受电压，并实现良好的频率特性。表面声波装置包括设置在压电基板上的IDT电极和设置在IDT电极上的第一绝缘膜和至少一个第二绝缘膜，并且利用SH波的高阶模式，其中声速在比最外表面处的绝缘膜更靠近IDT电极的第一绝缘膜中的表面声波的声表面波的声波高于位于最外表面的第二绝缘膜中的表面声波的声速。

6. 发明申请

US20100146754A1 ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：声波设备及其制造方法
公开(公告)号：US20100146754A1
公开(公告)日：2010-06-17
申请号：US12706051
申请日：2010-02-16
申请人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
发明人： Shunsuke KIDO , Takeshi NAKAO , Yasuharu NAKAI , Kenji NISHIYAMA , Michio KADOTA
IPC分类号： H01L41/22
CPC分类号： H03H9/02834 , H03H3/10 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49165
摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
摘要翻译：表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

7. 发明申请

US20090085429A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20090085429A1
公开(公告)日：2009-04-02
申请号：US12332394
申请日：2008-12-11
申请人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H01L41/04
CPC分类号： H03H9/02559 , H03H9/02834 , H03H9/14538
摘要： A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 D: duty C: thickness of the IDT electrode normalized using a wavelength λ.
摘要翻译：表面声波器件具有高功率耐受性能，并且能够有效地抑制不期望的杂散响应。表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并具有主要由Cu制成的IDT电极的电极第一氧化硅膜，其设置在除了电极设置的区域以外的区域中，其厚度等于电极的厚度;以及第二氧化硅膜，其被设置为覆盖电极和第一氧化硅膜，其中表面声波装置利用SH波，其中IDT电极的占空比D小于或等于约0.49，欧拉角（0°±5°，θ±5°），0°±10°）设定为满足以下不等式的范围：<？in-line-formula description =“In-line formula”end =“lead”？> - 10xD + 92.5-100xC <= θ<37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7×C + 45.729 <？在线公式描述=“内联公式”end =“tail”？> D：占空比C：IDT ele的厚度 ctrode使用波长λ进行归一化。

8. 发明申请

US20090021107A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20090021107A1
公开(公告)日：2009-01-22
申请号：US12243010
申请日：2008-10-01
申请人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H03H9/64
CPC分类号： H03H9/02559
摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Cu, a first silicon oxide film disposed in a region other than the region in which the electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is within the range of about 0.12λ to about 0.18λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=32.01−351.92×exp(−Tcu/0.0187) Formula (1) where Tcu is a value of Cu electrode film thickness normalized with the wavelength λ.
摘要翻译：利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Cu的电极，设置在除了设置电极的区域之外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于电极的厚度，第二氧化硅膜布置成以覆盖电极和第一氧化硅膜，其中电极的膜厚度在约0.12λ至约0.18λ的范围内，其中λ表示声表面波的波长，并且上述欧拉的θ （0°±5°，θ±5°，0°±10°）的角度在满足下列公式（1）的范围内：<？in-line-formula description =“In-line Formulas”end =“ 导线“>>θ= 32.01-351.92xexp（-Tcu / 0.0187）式（1）<？in-line-fo rmulae description =“In-line Formulas”end =“tail”？>其中Tcu是用波长λ标准化的Cu电极膜厚度的值。

9. 发明申请

US20070214622A1 SURFACE ACOUSTIC WAVE APPARATUS AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：表面声波设备及其制造方法
公开(公告)号：US20070214622A1
公开(公告)日：2007-09-20
申请号：US11743793
申请日：2007-05-03
申请人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H01L41/00 , H05K3/10
CPC分类号： H03H9/02929 , H03H3/10 , H03H9/02559 , H03H9/14538 , Y10T29/42 , Y10T29/49016 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155
摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.
摘要翻译：在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。去除残留在第一绝缘层上的抗蚀剂图案。形成第二绝缘层以覆盖第一绝缘层和IDT电极。

10. 发明申请

US20060290233A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波设备
公开(公告)号：US20060290233A1
公开(公告)日：2006-12-28
申请号：US11469505
申请日：2006-09-01
申请人： Kenji NISHIYAMA , Eiichi TAKATA , Takeshi NAKAO , Michio KADOTA
发明人： Kenji NISHIYAMA , Eiichi TAKATA , Takeshi NAKAO , Michio KADOTA
IPC分类号： H03H9/25
CPC分类号： H03H3/08 , H03H9/02984 , H03H9/14538 , H03H9/25
摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.
摘要翻译：表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金，由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度。在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层进一步提供层。

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