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1. 发明授权

US4841328A Electrostatic recording apparatus 失效
标题翻译：静电记录装置
公开(公告)号：US4841328A
公开(公告)日：1989-06-20
申请号：US893099
申请日：1986-08-04
申请人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
发明人： Masaru Takeuchi , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano , Koji Minami , Masayuki Iwamoto
IPC分类号： G03G5/082 , G03G13/04 , G03G21/08
CPC分类号： G03G5/08221 , G03G13/04 , G03G21/08
摘要： An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.
摘要翻译：静电记录装置包括感光鼓。感光鼓包括在支撑体上形成的非晶硅本体层，并且在本体层中，在支撑侧形成第一层区域，在表面侧形成第二层区域。第一层区域以包含0.01-40原子％的氢，0.1-40原子％的氧和5×10-6-1.0原子％的硼的方式形成。另一方面，实际上在第二层区域中氧和硼不被掺杂，并且在该非掺杂的第二层区域中抑制了载流子阱的产生。此外，从曝光用光源和放电用光源照射到感光鼓上的光的峰值波长设定为短于650nm，优选短于600nm。短于650nm的短波长的光在第二层区域中几乎被吸收，并且第一层区域中的载流子的生成小，从而抑制陷阱中的载流子的捕获。

2. 发明授权

US4885226A Electrophotographic photosensitive sensor 失效
标题翻译：电子照相光敏传感器
公开(公告)号：US4885226A
公开(公告)日：1989-12-05
申请号：US251944
申请日：1988-09-29
申请人： Masaru Takeuchi , Kazuyuki Gotoh , Kenichiro Wakisaka , Kazuhiko Honma , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano
发明人： Masaru Takeuchi , Kazuyuki Gotoh , Kenichiro Wakisaka , Kazuhiko Honma , Takeo Fukatsu , Shoichi Nakano , Yukinori Kuwano
IPC分类号： G03G5/082
CPC分类号： G03G5/08292 , G03G5/08264
摘要： An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the photoconductive layer or the surface layer includes a multilayer which includes a plurality of constituent thin layers having different optical energy band gaps.
摘要翻译：电子照相光敏传感器包括阻挡层，光电导层和主要由微晶或非晶硅和/或锗制成并形成在导电基底上的表面层。包括阻挡层，光电导层或表面层的至少一个层包括多层，其包括具有不同光能带隙的多个构成薄层。

3. 发明授权

US4914457A Electrostatic latent image forming apparatus 失效
标题翻译：静电潜像形成装置
公开(公告)号：US4914457A
公开(公告)日：1990-04-03
申请号：US168170
申请日：1988-03-15
申请人： Takeo Fukatsu , Kazuyuki Gotoh , Masaru Takeuchi , Kenichiro Wakizaka , Kazuhiko Honma , Shoichi Nakano , Yukinori Kuwano
发明人： Takeo Fukatsu , Kazuyuki Gotoh , Masaru Takeuchi , Kenichiro Wakizaka , Kazuhiko Honma , Shoichi Nakano , Yukinori Kuwano
IPC分类号： B41J2/39 , B41J2/40 , B41J2/44 , G03G15/04 , G03G15/05 , H04N1/113 , H04N1/193 , H04N1/29
CPC分类号： H04N1/193 , G03G15/05 , H04N1/1135 , H04N1/29
摘要： An electrostatic latent image forming apparatus includes a dielectric drum (10) a surface of which is uniformly charged in a predetermined polarity by a charging corotron (16). A recording head (18) includes a transparent base plate (30), a transparent electrode (32) and a photoconductive layer (34) composed of an amorphous silicon are formed on the transparent base plate in this order. A plurality of discharging electrodes (36) are formed on the photoconductive layer. A bias voltage (46) having a reverse polarity of the charged polarity being charging by the charging corotron is applied. When a light signal in accordance with an image to be formed is entered on the back surface of the transparent base plate, carriers, that is, holes and electrons are generated in the photoconductive layer, the carrier having the same polarity as the bias voltage is discharged onto the dielectric drum through the discharging electrodes. Electric charges are removed or reduced at a portion on the dielectric drum where such discharge occurs, and therefore an electrostatic latent image in accordance with the light signal being entered is formed on the dielectric drum.
摘要翻译：静电潜像形成装置包括介质鼓（10），其表面通过充电旋转体（16）以预定的极性均匀地充电。在透明基板上依次形成记录头（18），透明基板（30），透明电极（32）和由非晶硅组成的光电导层（34）。在光电导层上形成多个放电电极（36）。施加具有充电极性的相反极性的偏置电压（46），由充电电晕器进行充电。当根据要形成的图像的光信号进入透明基板的背面时，在光电导层中产生载流子，即空穴和电子，具有与偏置电压相同极性的载体是通过放电电极放置到介质鼓上。在介质鼓上发生这种放电的部分去除或减少电荷，因此在介质鼓上形成根据正在进入的光信号的静电潜像。

4. 发明授权

US4670367A Electrophotographic photosensitive member and method for making such a member 失效
标题翻译：电子照相感光构件及其制造方法
公开(公告)号：US4670367A
公开(公告)日：1987-06-02
申请号：US820985
申请日：1986-01-21
申请人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
发明人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082
CPC分类号： G03G5/0825
摘要： An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
摘要翻译：电子照相感光构件具有导电性基板，在基板上形成有主要由非晶硅构成的单层的第一层结构，以及主要由第一层结构上依次层叠的非晶硅构成的多层的第二层结构。多个第二层包括与高电阻值相比具有相对较高电阻值的至少两个高电阻层和具有相对较低电阻值的至少一个低电阻层。第二层结构的层交替层叠在第一层结构上，使得第二层结构中的第一层和最后层是高电阻层。

5. 发明授权

US4568622A Electrophotographic photosensitive member and method for making such a member containing amorphous silicon 失效
标题翻译：电子照相感光构件和制造这种含有非晶硅的构件的方法
公开(公告)号：US4568622A
公开(公告)日：1986-02-04
申请号：US621087
申请日：1984-06-15
申请人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
发明人： Koji Minami , Kazuyuki Goto , Hisao Haku , Takeo Fukatsu , Michitoshi Ohnishi , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082
CPC分类号： G03G5/0825
摘要： An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
摘要翻译：电子照相感光构件具有导电性基板，在基板上形成有主要由非晶硅构成的单层的第一层结构，以及主要由第一层结构上依次层叠的非晶硅构成的多层的第二层结构。多个第二层包括与高电阻值相比具有相对较高电阻值的至少两个高电阻层和具有相对较低电阻值的至少一个低电阻层。第二层结构的层交替层叠在第一层结构上，使得第二层结构中的第一层和最后层是高电阻层。

6. 发明授权

US4786572A Electrophotographic member with silicide interlayer 失效
标题翻译：具有硅化物中间层的电子照相元件
公开(公告)号：US4786572A
公开(公告)日：1988-11-22
申请号：US75129
申请日：1987-07-20
申请人： Hisao Haku , Kazuyuki Goto , Masaru Takeuchi , Takeo Fukatsu , Yukinori Kuwano
发明人： Hisao Haku , Kazuyuki Goto , Masaru Takeuchi , Takeo Fukatsu , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/144 , G03G5/08 , G03G5/08228 , G03G5/08235 , G03G5/08242
摘要： An electrophotographic photosensitive member comprising (a) a substrate made of an electrically conductive material, (b) a silicide layer formed on the surface of the substrate, and (c) a photoconductive layer superposed on the silicide layer being composed chiefly of amorphous silicon; which is usable for copying machines and intelligent copying machine.
摘要翻译：一种电子照相感光构件，包括（a）由导电材料制成的衬底，（b）形成在衬底表面上的硅化物层，和（c）重叠在主要由非晶硅构成的硅化物层上的光电导层; 可用于复印机和智能复印机。

7. 发明授权

US4681826A Electrophotographic photosensitive member 失效
标题翻译：电子照相感光构件
公开(公告)号：US4681826A
公开(公告)日：1987-07-21
申请号：US896617
申请日：1986-08-14
申请人： Takeo Fukatsu , Kazuyuki Goto , Hisao Haku , Yukinori Kuwano
发明人： Takeo Fukatsu , Kazuyuki Goto , Hisao Haku , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/144 , G03G5/08 , G03G5/08228 , G03G5/08235 , G03G5/08242
摘要： An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photosensitivity and charge retaining ability at the surface layer, the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing carbon forming an insulating material as combined with the amorphous silicon, and the content of the carbon based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.
摘要翻译：一种电子照相感光构件，包括在基底上形成的光电导层和形成在光电导层上的表面层，并且在表面层处具有高的光敏性和电荷保持能力，光电导层和表面层主要由非晶硅组成，表面层是与非晶硅组合形成绝缘材料的碳的层，并且基于硅原子的碳的含量朝向衬底低，并且朝向表面层的表面高; 可用于复印机和智能复印机。

8. 发明授权

US4624905A Electrophotographic photosensitive member 失效
标题翻译：电子照相感光构件
公开(公告)号：US4624905A
公开(公告)日：1986-11-25
申请号：US640314
申请日：1984-08-13
申请人： Hisao Haku , Kazuyuki Goto , Masayuki Tanaka , Takeo Fukatsu , Yukinori Kuwano
发明人： Hisao Haku , Kazuyuki Goto , Masayuki Tanaka , Takeo Fukatsu , Yukinori Kuwano
IPC分类号： G03G5/08 , G03G5/082 , G03G5/14
CPC分类号： G03G5/144 , G03G5/08 , G03G5/08228 , G03G5/08235 , G03G5/08242
摘要： An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity and charge retaining ability at the surface layer, in which the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing a substance forming an insulating material as combined with the amorphous silicon, and the content of the substance based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.
摘要翻译：一种电子照相感光构件，包括在基底上形成的光电导层和形成在光电导层上的表面层，并且在表面层具有高的光导电性和电荷保留能力，其中光电导层和表面层主要由非晶硅组成表面层是含有形成与非晶硅结合的绝缘材料的物质的层，并且基于硅原子的物质的含量朝向基板低，朝向表面层的表面高; 可用于复印机和智能复印机。

9. 发明授权

US4689438A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4689438A
公开(公告)日：1987-08-25
申请号：US787987
申请日：1985-10-16
申请人： Takeo Fukatsu , Masaru Takeuchi , Kazuyuki Gotoh
发明人： Takeo Fukatsu , Masaru Takeuchi , Kazuyuki Gotoh
IPC分类号： H01L31/0236 , H01L31/075 , H01L31/18 , H01L31/06
CPC分类号： H01L31/075 , H01L31/0236 , H01L31/18 , Y02E10/548
摘要： The photovoltaic device of this invention has a p-type layer of oxides of the platinum group between a transparent electrode layer texturized at the side opposite the light incident surface and a semiconductive layer having a semiconductor junction and including a p-type layer at the light incident side thereof.With such a construction, the optical path length of an incident ray is increased, thereby improving the photoelectric conversion efficiency. Also, since the p-type semiconductive layer contacts the p-type layer of oxides of the platinum group, imperfections in the semiconductor junction can be reduced. Accordingly, with a photovoltaic device of this invention, the peak value of the photoelectric conversion efficiency can be increased and also the manufacturing yield can be remarkably increased.
摘要翻译：本发明的光电器件在与光入射表面相反一侧纹理化的透明电极层和具有半导体结的半导电层之间具有铂族氧化物的p型层，并且在光线处包括p型层事件侧。通过这样的结构，入射光线的光程长度增加，从而提高光电转换效率。此外，由于p型半导体层与铂族的p型氧化物层接触，所以可以减少半导体结中的缺陷。因此，利用本发明的光电器件，可以提高光电转换效率的峰值，并且可以显着提高制造产量。

10. 发明授权

US4680607A Photovoltaic cell 失效
标题翻译：光伏电池
公开(公告)号：US4680607A
公开(公告)日：1987-07-14
申请号：US730670
申请日：1985-05-03
申请人： Takeo Fukatsu , Masaru Takeuchi , Kazuyuki Goto
发明人： Takeo Fukatsu , Masaru Takeuchi , Kazuyuki Goto
IPC分类号： H01L31/032 , H01L31/075 , H01L31/20 , H01L27/14
CPC分类号： H01L31/202 , H01L31/032 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic cell in accordance with the present invention comprises a transparent substrate, a transparent first electrode layer on the substrate and a first semiconductor layer of P type on the first electrode layer, the first semiconductor layer being approximately 25 to 300 .ANG. in thickness and having activation energy of less than 0.3 eV for generation of positive holes. The above stated cell further comprises a second semiconductor layer of the same conductivity type on the first semiconductor layer, the second semiconductor layer being approximately 100 to 1000 .ANG. in thickness and having activation energy of more than 0.3 eV for generation of positive holes. The above stated cell further comprises a third semiconductor layer of I type on the second semiconductor layer, a fourth semiconductor layer of N type on the third semiconductor layer and a second electrode layer on the fourth semiconductor layer.
摘要翻译：根据本发明的光伏电池包括透明基板，基板上的透明第一电极层和第一电极层上的P型第一半导体层，第一半导体层的厚度约为25至300埃，并具有活性能小于0.3 eV，用于产生空穴。上述单元还包括在第一半导体层上具有相同导电类型的第二半导体层，第二半导体层的厚度大约为100至1000，并且具有大于0.3eV的激活能用于产生空穴。上述单元还包括第二半导体层上的I型第三半导体层，第三半导体层上的N型第四半导体层和第四半导体层上的第二电极层。

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